SiC substrate rau CVD zaj duab xis txheej

Tshuaj Vapor Deposition

Chemical vapor deposition (CVD) oxide yog txheej txheem kev loj hlob uas cov roj ua ntej tso cov yeeb yaj kiab nyias mus rau wafer hauv lub reactor. Cov txheej txheem kev loj hlob yog qhov kub thiab txias thiab muaj kev loj hlob ntau dua thaum piv rauthermal oxide. Nws kuj ua tau ntau thinner silicon dioxide txheej vim hais tias cov zaj duab xis yog deposted, es loj hlob. Cov txheej txheem no tsim cov yeeb yaj kiab uas muaj hluav taws xob ua haujlwm siab, uas yog qhov zoo rau kev siv hauv ICs thiab MEMS li, ntawm ntau lwm yam kev siv.

Chemical vapor deposition (CVD) oxide yog ua thaum xav tau ib txheej sab nraud tab sis silicon substrate yuav tsis tuaj yeem oxidized.

Chemical Vapor Deposition Loj hlob:

CVD kev loj hlob tshwm sim thaum cov pa roj los yog vapor (precursor) tau nkag mus rau hauv qhov kub thiab txias reactor qhov twg wafers tau teem caij vertically lossis horizontally. Cov pa txav mus los ntawm qhov system thiab faib sib npaug ntawm qhov chaw ntawm cov wafers. Raws li cov precursors txav mus los ntawm lub reactor, cov wafers pib nqus lawv mus rau lawv qhov chaw.

Thaum cov precursors tau faib tusyees thoob plaws hauv lub cev, tshuaj lom neeg cov tshuaj tiv thaiv pib nyob rau saum npoo ntawm substrates. Cov tshuaj tiv thaiv no pib raws li cov Islands tuaj, thiab raws li cov txheej txheem txuas ntxiv, cov Islands tuaj loj hlob thiab sib koom ua ke los tsim cov yeeb yaj kiab uas xav tau. Cov tshuaj tiv thaiv tsim biproducts nyob rau saum npoo ntawm cov wafers, uas diffuse hla cov ciam teb txheej thiab ntws tawm ntawm lub reactor, tawm tsuas yog cov wafers nrog lawv deposited zaj duab xis txheej.

Daim duab 1

Cov txiaj ntsig ntawm Chemical Vapor Deposition:

• Tsawg kub kev loj hlob txheej txheem.
• Kev tso nyiaj ceev ceev (tshwj xeeb yog APCVD).
• Tsis tas yuav tsum yog silicon substrate.
• Cov kauj ruam zoo (tshwj xeeb yog PECVD).

Daim duab 2
Silicon dioxide deposition vs

Yog xav paub ntxiv txog tshuaj vapor deposition los yog thov kom tau ib nqe lus, thovContact SVMhnub no los tham nrog ib tug tswv cuab ntawm peb pab neeg muag khoom.

Hom CVD

LPCVD

Tsis tshua muaj siab chemical vapor deposition yog txheej txheem tshuaj vapor deposition txheej txheem tsis muaj pressurization. Qhov sib txawv loj ntawm LPCVD thiab lwm txoj hauv kev CVD yog qhov kub thiab txias. LPCVD siv qhov kub siab tshaj plaws los tso cov yeeb yaj kiab, feem ntau siab dua 600 ° C.

Qhov ib puag ncig uas tsis tshua muaj siab ua rau cov yeeb yaj kiab zoo sib xws nrog cov purity siab, rov tsim dua, thiab homogeneity. Qhov no yog ua los ntawm 10 - 1,000 Pa, thaum cov qauv chav siab yog 101,325 Pa. Kub txiav txim siab lub thickness thiab purity ntawm cov yeeb yaj kiab, nrog rau qhov kub siab dua ua rau cov yeeb yaj kiab tuab thiab ntau dua.

• Common films tso:polysilicon, doped & undoped oxides,nitrides.

PECVD

Plasma enhanced tshuaj vapor deposition yog ib tug uas tsis muaj kub, siab zaj duab xis ceev deposition txheej txheem. PECVD tshwm sim nyob rau hauv CVD reactor nrog ntxiv ntawm cov ntshav ntshav, uas yog ib feem ntawm cov roj ionized nrog ib tug siab dawb electron ntsiab lus (~ 50%). Qhov no yog ib txoj kev uas tsis tshua muaj kub deposition uas tshwm sim ntawm 100 ° C - 400 ° C. PECVD tuaj yeem ua tau ntawm qhov kub thiab txias vim tias lub zog los ntawm cov hluav taws xob dawb dissociates cov roj reactive los ua ib zaj duab xis ntawm qhov chaw wafer.

Txoj kev tso ntshav no siv ob hom ntshav plasma:

1. Txias (tsis yog cua sov): cov khoom siv hluav taws xob muaj qhov kub siab tshaj qhov nruab nrab thiab ions. Txoj kev no siv lub zog ntawm electrons los ntawm kev hloov lub siab nyob rau hauv lub deposition chamber.
2. Thermal: electrons yog kub tib yam li cov hais thiab ions nyob rau hauv lub deposition chamber.

Nyob rau hauv lub deposition chamber, xov tooj cua zaus voltage yog xa los ntawm electrodes saum toj thiab hauv qab lub wafer. Qhov no tsub cov electrons thiab ua kom lawv nyob rau hauv lub xeev excitable thiaj li yuav tso cov yeeb yaj kiab uas xav tau.

Muaj plaub kauj ruam rau kev loj hlob ntawm cov yeeb yaj kiab ntawm PECVD:

1. Muab lub hom phiaj wafer rau ntawm ib qho hluav taws xob nyob rau hauv lub deposition chamber.
2. Qhia reactive gases thiab deposition ntsiab rau lub chamber.
3. Xa cov ntshav ntawm cov electrodes thiab siv qhov hluav taws xob los ua kom cov ntshav plasma.
4. Reactive gas dissociates thiab reacts nrog wafer nto los ua ib zaj duab xis nyias, byproducts diffuse tawm ntawm chamber.

• Common films tso: silicon oxides, silicon nitride, amorphous silicon,silicon oxynitrides (Si_xO_yN_z).

APCVD

Atmospheric siab tshuaj vapor deposition yog ib tug uas tsis muaj kub deposition txheej txheem uas tshwm sim nyob rau hauv lub cub tawg ntawm tus qauv atmospheric siab. Zoo li lwm txoj hauv kev CVD, APCVD yuav tsum muaj cov pa roj ua ntej hauv chav tso dej, tom qab ntawd qhov kub thiab txias maj mam nce mus rau qhov cuam tshuam rau ntawm qhov chaw wafer thiab tso ib zaj duab xis nyias. Vim lub simplicity ntawm txoj kev no, nws muaj ib tug heev deposition tus nqi.

• Feem ntau cov yeeb yaj kiab tso tawm: doped thiab undoped silicon oxides, silicon nitrides. Kuj tseem siv hauvannealing.

HDP CVD

High density plasma chemical vapor deposition is a version of PECVD that use a high density plasma, which allow the wafers to react with an even lower temperature (nruab nrab ntawm 80 ° C-150 ° C) nyob rau hauv lub deposition chamber. Qhov no kuj tsim ib zaj duab xis nrog zoo trench filling peev xwm.

• Common films tso: silicon dioxide (SiO₂), silicon nitride (Si₃N₄),silicon carbide (SiC).

SACVD

Subatmospheric siab tshuaj vapor deposition txawv ntawm lwm txoj kev vim hais tias nws yuav siv sij hawm qhov chaw nyob rau hauv lub chav tsev siab thiab siv ozone (O.₃) los pab catalyze cov tshuaj tiv thaiv. Cov txheej txheem deposition yuav siv sij hawm qhov chaw siab tshaj li LPCVD tab sis qis dua APCVD, nyob nruab nrab ntawm 13,300 Pa thiab 80,000 Pa. SACVD films muaj ib tug siab deposition tus nqi thiab uas yuav txhim kho raws li kub nce mus txog 490 ° C, thaum lub sij hawm nws pib txo. .

• Common films tso:BPSG, PSG,TEOS.

Shandong Zhongpeng Tshwj Xeeb Ceramics Co., Ltd yog ib qhov loj tshaj plaws silicon carbide ceramic cov ntaub ntawv tshiab daws teeb meem hauv Suav teb. SiC technical ceramic: Moh lub hardness yog 9 (New Moh's hardness yog 13), nrog zoo heev tiv taus yaig thiab corrosion, zoo heev abrasion - kuj thiab anti-oxidation. SiC khoom lub neej kev pab cuam yog 4 mus rau 5 zaug ntev dua 92% alumina khoom. MOR ntawm RBSiC yog 5 mus rau 7 npaug ntawm SNBSC, nws tuaj yeem siv rau cov duab ntau dua. Cov txheej txheem hais lus yog ceev, kev xa khoom yog raws li tau cog lus tseg thiab qhov zoo yog qhov thib ob. Peb ib txwm pheej sim sim peb lub hom phiaj thiab muab peb lub siab rov qab los rau zej zog.