SIC SUTSTRET yeCVD Firimu Coating

Chemical Vapor Deposition

Chemical Vapor deposition (CVD) oxide leadar kukura maitiro ipo precursor gasi yakatetepa firimu rakatetepa pane waffer mune anoongorora. Maitiro ekukura akaderera tembiricha uye ane huwandu hwakanyanya hwekukura kana zvichienzaniswa nethermal oxide. Izvo zvinoburitsa zvakare zvakawandisa silicon dicon zviyero zvekuti firimu racho rakanyungudutswa, pane kukura. Kuita uku kunobereka firimu neyekupokana kwakanyanya kwemagetsi, izvo zvakanaka kuti ushandise muICs uye mems zvishandiso, pakati pezvimwe zvakawanda zvinoshandiswa.

Chemical Vapor Deposition (CVD) oxide inoitwa kana iyo yekunze denderedzwa inodiwa asi iyo silicon substrate inogona kusakwanisa kuve oxidized.

Chemical Vapor Deposition Kukura:

Kukura kweCVD kunoitika kana gasi kana mupfumi (precursor) inounzwa mukudziya tembiricha kune wafers yakarongedzwa kana yakatwasuka. Iyo gasi inofamba ichipfuura nehurongwa uye inogovera zvakaringana pamusoro peanofamba. Sezvo vapi vepamberi pevafundisi vanofamba nemutambi, mafambi anotanga kuvabata pamusoro pavo.

Kana vatariri vepamberi pavakagoverwa nenzira yakafanana nehurongwa hwese, maitiro emakemikari anotanga pasi peSubstrates. Aya maitiro emakemikari anotanga sezvitsuwa, uye sezvo maitiro acho anoenderera mberi, zviwi zvinokura uye zvinosanganisa kugadzira iyo yaunoda firimu. Makemikari anogadzirisa anogadzira mabheti ezvigadzirwa, ayo akasiyana miganhu yekufamba uye kuyerera kunze kweanoshanda, achisiya afters aine yavo yakaiswa firimu yekubatanidza.

Mufananidzo 1

Zvakanakira Memical Vapor Vapor Deposition:

• Yakaderera kupisa kukura maitiro.
• Fast Deposition Rate (kunyanya ApcVD).
• Haifanirwe kuve silicon substrate.
• Yakanaka nhanho yekuvhara (kunyanya pelvd).

Mufananidzo 2
Silicon Dioxide Dourition vs. Kukura

Kuti uwane rumwe ruzivo mumakemikari apor position kana kukumbira quote, ndapotaBata SVMNhasi kuti utaure nenhengo yedu yekutengesa timu.

Mhando dzeCVD

LPCVD

Yakadzika kumanikidza makemikari eporsion is a standard makemikari apor position pasina kudzvanywa. Musiyano mukuru pakati peLPCVD uye mamwe maCVD nzira iri kudziya tembiricha. LPCVD inoshandisa iyo yepamusoro tembiricha yekuisa mafirimu, kazhinji pamusoro pe600 ° C.

Nzvimbo yekumanikidza-yekumanikidza inogadzira iyo yunifomu yunifomu ine yakanyanya kuchena, kubereka, uye homogeneity. Izvi zvinoitwa pakati pegumi - chiuru pa, neyakajairwa imba yekumanikidza ndeye 101,325 pa

• Mafirimu akagoverwa akaiswa:Polysilic, Deped & isina kuzivikanwa oxides,nitrides.

PecVD

Plasma yakamisikidzwa chemakemikari muposofa anodzvinyirira tembiricha yakadzika, yefirimu rakakwira density deposition maitiro. Pecvd inoitika muCVD inogadzirisa nekuwedzera kweplasma, iyo iri gasi rechidimbu ionion ine gasi rakakwirira yemagetsi (~ 50%). Iyi ndiyo yakadzika tembiricha yekuisa nzira inoitika pakati pe100 ° C - 400 ° C. Pecvd inogona kuitwa pakudziya kwakadzika nekuti simba kubva mumagetsi emagetsi emagetsi anodziyanisa magasi ekugadzirisa kuti agadzire iyo firimu pane waffer.

Iyi nzira yekuisa inoshandisa marudzi maviri akasiyana eplasma:

1. Cold (isiri-inopisa): Electrons ine tembiricha yakakwira kupfuura isina kwayakarerekera uye ion. Iyi nzira inoshandisa simba remagetsi nekuchinja kudzvanywa mukamuri rekuiswa.
2. Thermal: Electrons idzo tembiricha imwechete nezvisungo uye zvidimbu mukamuri yekuiswa.

Mukati mekamuri yekuiswa, radio-frequency voltage inotumirwa pakati peMagetsi pamusoro uye pazasi pehudyu. Izvi zvinopomerwa maElectrons uye kuzvichengeta mune inofadza mamiriro kuitira kuti irege kuendesa iyo firimu yaunoda.

Kune matanho mana ekukura mafirimu kuburikidza necVD:

1. Nzvimbo chinangwa chakanyoreswa pane electrode mukati mekamuri yekuiswa.
2. Suma magasi anogadzirisa uye zvinhu zvekuisa mukamuri.
3. Tumira plasma pakati peElectrodes uye shandisa voltage kuti ufadze plasma.
4. Regedza gasi kusiyanisa uye kunoshanda neiyo waferise nzvimbo kuti iite firimu rakatetepa, byproducts dzakasiyana kubva mukamuri.

• Mafirimu akajairika akaiswa: Silicon oxides, silicon nitride, amorphous silicon,Silicon Oxynitrides (SI_xO_yN_z).

AKVCD

Atmospheric kudzvinyirira chemical vapor position ndeye yakaderera tembiricha yekuisa maitiro ayo anoitika mune choto pane choto panguva yakajairwa kumanikidzwa. Kufanana nedzimwe nzira dzeCVD, Apcvd inoda gasi precursor mukati mekamuri yekuiswa, saka tembiricha zvishoma nezvishoma inokwira kuita maitiro pane iyo wafer kumusoro uye isa firimu rakatetepa. Nekuda kwekureruka kwenzira iyi, ine huwandu hwakanyanya hwekubhadhara.

• Mafirimu akagoverwa akaiswa: Dopped uye isingadiwe silicon oxides, silicon nitrides. Zvakare inoshandiswa mukatiAnnealing.

HDP CVD

Yakakwira Density Plasma Chemical Vapor Vepor Cosed ishanduro yePecved density plasma, inobvumira kuti vafambi kuti vaite tembiricha yekudziya (pakati pe80 ° C-150 ° C) mukati mekamuri yekuiswa. Izvi zvakare zvinoumba firimu neyekupedzisira trench kuzadza kugona.

• Mafirimu akajairika akaiswa: Silicon dioxide (Sio₂), silicon nitride (si₃N₄),Silicon Carbide (Sic).

Sacvd

Subatmospheric kudzvanywa kwemakemikari eposition inosiyana nedzimwe nzira nekuti inoitika pazasi pekamuri yekumanikidza uye inoshandisa ozone (o₃) kubatsira cetalyze maitiro. Maitiro ekupfekedza anoitika kumanikidzwa kwepamusoro pane lPCVD asi yakaderera, iri pakati pegumi nemazana matatu e9,300

• Mafirimu akagoverwa akaiswa:BPSG, PSG,Teok.

Shandong zhongpeng yakakosha ceramics co. SIC technical Ceramic: Kuomarara kwaMoh Hupenyu hweSIC yeSekission ndeye mana kusvika mashanu koreba kupfuura 92% Alumina zvinyorwa. Mor Mor of Rbsc ndeye mashanu kusvika manomwe nguva yekunyeka, inogona kushandiswa kune mamwe maumbirwo akaoma. Maitiro ekutaurirana anokurumidza, kuendesa kwacho sekuvimbiswa uye kunaka ndeye yechipiri kune hapana. Isu tinogara tichiramba tichinetsa zvinangwa zvedu uye tipe moyo yedu kudzoserwa munharaunda.