SiC substrate yeCVD film coating

Tsanangudzo Pfupi

Chemical Vapor Deposition Kemikari vapor deposition (CVD) oxide inzira yekukura iyo inotangira gasi inoisa firimu rakatetepa pawafer mune reactor. Iyo yekukura tembiricha yakaderera uye ine yakanyanya kukura mwero kana ichienzaniswa neiyo thermal oxide. Iyo zvakare inogadzira yakaonda yakawanda silicon dioxide layers nekuti iyo firimu inobviswa, pane kukura. Maitiro aya anoburitsa firimu rine yakakwira magetsi kuramba, iro rakanakira kushandiswa muICs neMEMS zvishandiso, pakati pezvimwe zvakawanda ...


  • Port:Weifang kana Qingdao
  • New Mohs kuoma: 13
  • Main raw material:Silicon Carbide
  • Product Detail

    ZPC - silicon carbide ceramic mugadziri

    Product Tags

    Chemical Vapor Deposition

    Chemical vapor deposition (CVD) oxide inzira yekukura iyo inotangira gasi inoisa firimu rakatetepa pawafer mune reactor. Kukura kwacho kwakadzikira tembiricha uye ine mwero wekukura wakanyanya kana uchienzaniswathermal oxide. Iyo zvakare inogadzira yakaonda yakawanda silicon dioxide layers nekuti iyo firimu inobviswa, pane kukura. Maitiro aya anoburitsa firimu rine yakakwirira magetsi kuramba, iro rakanakira kushandiswa muICs neMEMS zvishandiso, pakati pemamwe akawanda maapplication.

    Kemikari vapor deposition (CVD) oxide inoitwa kana chikamu chekunze chiri kudikanwa asi iyo silicon substrate inogona kusakwanisa kuve oxidized.

    Chemical Vapor Deposition Kukura:

    Kukura kweCVD kunoitika kana gasi kana mhute (precursor) inounzwa mune yakaderera tembiricha reactor uko mawafer anorongwa akatwasuka kana akatwasuka. Iyo gasi inofamba nepakati pehurongwa uye inogovera zvakaenzana pamusoro peiyo wafers. Sezvo aya maprecursors anofamba nemu reactor, wafers anotanga kuatora pamusoro pavo.

    Kana ma precursors achinge agovera zvakaenzana muhurongwa, maitiro emakemikari anotanga pamusoro peiyo substrates. Uku kuita kwemakemikari kunotanga sezvitsuwa, uye sezvo muitiro wacho unopfuurira, zvitsuwa zvinokura nokubatana kuti zvigadzire firimu rinodiwa. Kuita kwemakemikari kunogadzira mabiproducts pamusoro pemawafer, ayo anopararira nepakati pemuganhu uye anoyerera achibuda kunze kwe reactor, achisiya angori mawafer ane firimu rawo rakaiswa.

    Mufananidzo 1

    Chemical vapor deposition process

     

    (1.) Gasi / Mhepo inotanga kuita uye kuumba zvitsuwa pane substrate pamusoro. (2.) Zvitsuwa zvinokura uye zvinotanga kusangana pamwechete. (3.) Kuenderera mberi, firimu rakafanana rakagadzirwa.
     

    Zvakanakira Chemical Vapor Deposition:

    • Yakaderera tembiricha yekukura maitiro.
    • Fast deposition rate (kunyanya APCVD).
    • Haifanire kunge iri silicon substrate.
    • Nhanho yakanaka yekuvhara (kunyanya PECVD).
    Mufananidzo 2
    CVD vs. Thermal oxideSilicon dioxide deposition maringe nekukura

     


    Kuti uwane rumwe ruzivo nezve makemikari vapor deposition kana kukumbira quote, ndapotaBATA SVMnhasi kutaura nenhengo yeboka redu rekutengesa.


    Mhando dzeCVD

    LPCVD

    Low pressure chemical vapor deposition ndeye yakajairwa kemikari vapor deposition process pasina kudzvanya. Musiyano mukuru pakati peLPCVD nedzimwe nzira dzeCVD ndeyetembiricha yekuisa. LPCVD inoshandisa tembiricha yepamusoro kuisa mafirimu, kazhinji ari pamusoro pe600°C.

    Iyo yakaderera-kudzvanywa nharaunda inogadzira yakanyanya yunifomu firimu ine kuchena kwepamusoro, kuberekana, uye homogeneity. Izvi zvinoitwa pakati pe10 - 1,000 Pa, nepo chiyero chemukamuri chinomanikidza chiri 101,325 Pa. Tembiricha inotarisa ukobvu uye kuchena kwemafirimu aya, nekupisa kwepamusoro kunokonzera kukora uye mamwe mafirimu akachena.

     

    PECVD

    Plasma yakakwidziridzwa kemikari vapor deposition tembiricha yakaderera, yakakwira firimu density deposition maitiro. PECVD inoitika muCVD reactor pamwe nekuwedzerwa kweplasma, iyo ine chikamu ionized gasi ine yakakwirira yemahara erekitironi yemukati (~ 50%). Iyi inzira yekudzikira tembiricha yekuisa iyo inoitika pakati pe100°C -400°C. PECVD inogona kuitwa patembiricha yakaderera nekuti simba rinobva kumaerekitironi akasununguka rinopatsanura magasi anoshanda kuti agadzire firimu pane wafer pamusoro.

    Iyi nzira yekuisa inoshandisa marudzi maviri akasiyana eplasma:

    1. Inotonhora (isina-thermal): maerekitironi ane tembiricha yakakwira kupfuura iyo isina kwayakarerekera particles uye ayoni. Iyi nzira inoshandisa simba remaerekitironi nekushandura kudzvanywa mukamuri yekuisa.
    2. Thermal: maerekitironi tembiricha yakafanana nezvidimbu uye ayoni mukamuri yekuisa.

    Mukati mekamuri yekuisa, redhiyo-frequency voltage inotumirwa pakati pema electrode kumusoro uye pasi pechifukidziro. Izvi zvinochaja maerekitironi nekuachengeta ari muchimiro chinofadza kuitira kuisa firimu raunoda.

    Pane matanho mana ekukura mafirimu kuburikidza nePECVD:

    1. Isa chinangwa chewafer pane electrode mukati me deposition chamber.
    2. Isai reactive magasi uye deposition zvinhu mukamuri.
    3. Tumira plasma pakati pemagetsi uye isa voltage kufadza plasma.
    4. Gasi reactive rinopatsanura uye rinosangana newafer pamusoro kuita firimu rakatetepa, nezvinobuda zvinopararira kunze kwekamuri.

     

    APCVD

    Atmospheric pressure chemical vapor deposition inzira yakadzikira yekuisa tembiricha inoitika muchoto pakumanikidzwa kwemhepo. Kufanana nedzimwe nzira dzeCVD, APCVD inoda gasi rinotangira mukati mekamuri yekuisa, ipapo tembiricha inokwira zvishoma nezvishoma kuti igadzirise maitiro pawafer pamusoro uye kuisa firimu rakatetepa. Nekuda kwekureruka kweiyi nzira, ine yakanyanya deposition rate.

    • Mafirimu akajairika akaiswa: doped uye undoped silicon oxides, silicon nitrides. Inoshandiswa zvakare muannealing.

    HDP CVD

    High density plasma chemical vapor deposition ndiyo vhezheni yePECVD inoshandisa yakakwira density plasma, iyo inobvumira mawaferi kuita neyakatodzika tembiricha (pakati pe80 ° C-150 ° C) mukati mekamuri yekuisa. Izvi zvinogadzirawo firimu rine simba guru rekuzadza mugero.


    SACVD

    Subatmospheric pressure kemikari vapor deposition inosiyana nedzimwe nzira nekuti inoitika pasi peiyo standard room pressure uye inoshandisa ozone (O.3) kubatsira kukonzeresa kuita. Deposition process inoitika pakumanikidzwa kwepamusoro pane LPCVD asi yakaderera pane APCVD, pakati pe13,300 Pa ne80,000 Pa. SACVD films ine high deposition rate uye inovandudza sezvo tembiricha inowedzera kusvika 490 ° C, panguva iyoyo inotanga kuderera. .

    • Mafirimu akajairika akaiswa:BPSG, PSG,TEOS.

  • Zvakapfuura:
  • Zvinotevera:

  • Shandong Zhongpeng Special Ceramics Co., Ltd ndeimwe yeyakakura silicon carbide ceramic zvinhu zvitsva zvinogadziriswa muChina. SiC technical ceramic: Kuomarara kweMoh ndeye 9 (Kuoma kweMoh kutsva ndeye 13), nekupokana kwakanyanya kukukurwa nekuora, kunyura kwakanakisa - kuramba uye anti-oxidation. Hupenyu hwesevhisi yechigadzirwa cheSiC hwakareba 4 kusvika kashanu kupfuura 92% alumina zvinhu. Iyo MOR yeRBSiC ndeye 5 kusvika 7 nguva iyo yeSNBSC, inogona kushandiswa kune mamwe maumbirwo akaoma. Iyo quotation process inokurumidza, kuendesa kwakavimbiswa uye mhando ndeyechipiri kune imwe. Isu tinogara tichishingirira kupikisa zvinangwa zvedu uye nekudzorera moyo yedu kunharaunda.

     

    1 SiC zvedongo fekitari 工厂

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