Sic Substrate don CVD Film CVD

Kayan aikin rigakafi

Cikakken vapor (CVD) Oraide tsari ne mai linear inda tsarin gas mai santsi a kan wafer a cikin reaceror a cikin reacer. Tsarin ci gaban yana da ƙarancin zafin jiki kuma yana da mafi girma girma lokacin da aka kwatanta dadanniya. Hakanan yana samar da yadudduka masu yawa silicon saboda an ajiye fim ɗin, maimakon girma. Wannan tsari yana samar da fim tare da babban juriya na lantarki, wanda yake da kyau a yi amfani da shi a cikin ICS da Mems na'urori, a cikin wasu aikace-aikace da yawa.

Ana yin hauhawar kayan aikin rigakafi (CVD) lokacin da ake buƙatar Oxide lokacin da ake buƙatar Oxide lokacin da ake buƙatar Oxide lokacin da ake buƙatar Oxide lokacin da ake buƙatar Orse-waje amma ana buƙatar silicon na waje amma silicon silstate bazai iya zama waɗanda zasu iya yin oxidized ba.

Murmushi na Chemical Vapor:

Girma CVD yana faruwa lokacin da gas ko tururuwa (precursor) an gabatar dashi a cikin ƙarancin zafin jiki inda aka shirya ko kuma a kwance. Gas gas yana motsawa ta tsarin kuma rarraba a ko'ina a saman saman wafers. Kamar yadda waɗannan abubuwan da ke tattare da ke motsa su ta hanyar ɓatarwa, wasannin sun fara shan su a farfajiyarsu.

Da zarar abubuwan da suka gabata sun rarraba a duk faɗin tsarin, halayen sinadarai fara har zuwa farfajiya na substrates. Wadannan halayen sunadarai suna farawa kamar tsibiran, kuma yayin aiwatar da ci gaba, tsibiran suna girma da haɗuwa don ƙirƙirar fim da ake so. Abubuwan sunadarai suna haifar da bishiyoyi a saman wafers, wanda ya hana ƙetaren yankin kuma yana kwarara daga mai amsawa, ya bar kawai wafers tare da adana fim ɗin.

Hoto na 1

Fa'idodi na Ciniki na Vapor:

• Lowerancin yanayin ci gaban zazzabi.
• Ajiyayyen ajiya (musamman apvd).
• Bai kamata ya zama silicon substrate.
• Kyakkyawan ɗaukar hoto (musamman pecvd).

Hoto na 2
Silicon Dioxide ajiya vs. Girma

Don ƙarin bayani akan murfin vapor na sunadarai ko don neman magana, don AllahTuntuɓi SVMyau don yin magana da memba na ƙungiyar tallace-tallace.

Nau'in CVD

LPCVD

Lowerarancin iska mai guba mai guba shine tsarin ajiya na daidaitawa ba tare da latsa ba. Manyan bambanci tsakanin lpcvd da sauran hanyoyin CVD shine ajiya zazzabi. LPCVD yana amfani da mafi girman zafin jiki don adana fina-finai, yawanci sama da 600 ° C.

Matsakaicin yanayin matsin lamba yana haifar da fim ɗin uniform tare da tsarkin tsarkakakkiyar, haifuwa, da kuma rashin daidaito. An yi wannan tsakanin 10 - 1,000 pa, yayin da matsin lamba na ɗakin shine 101,325 PA. Zazzabi ya kayyade da kauri da kuma tsarkakakkun yanayin wadataccen fina-finai.

• Gama gari fina-finai da aka ajiye:polysilicon, doped & undoped okes,nitries.

PeCVD

Plasma inganta kayan aikin tursasawa na comanica yana da karancin zafin jiki, babban aikin ajiya mai girma. Pecvd yana faruwa a cikin CVD reactor tare da ƙari na plasma, wanda shi ne wani gas mai iskar gas tare da abun cikin kyauta kyauta (~ 50%). Wannan hanya ce mai ƙarancin zafin jiki wanda ke faruwa tsakanin 100 ° C - 400 ° C. Pecvd za'a iya yin shi a yanayin zafi saboda makamashi daga lantarki na kyauta sun narkar da gas na gas don samar da fim a saman farfajiya.

Wannan hanyar ajiya tana amfani da nau'ikan plasma guda biyu:

1. Cold (wanda bai dace ba): wayoyin lantarki suna da zafin jiki mafi girma fiye da tsaka tsaki da barbashi da kuma ions. Wannan hanyar tana amfani da ƙarfin lantarki ta canza matsin lamba a ɗakin ajiya.
2. Thermal: electson sune zafin jiki iri ɗaya kamar barbashi da ion a ɗakin ajiya.

A cikin ɗakin ajiya, ana aika ƙarfin lantarki tsakanin wayoyin da ke sama da ƙasa da wafer. Wannan yana cajin wutan lantarki kuma ku riƙe su cikin wani yanayi mai wulakanci don ajiye fim ɗin da ake so.

Akwai matakai huɗu don girma fina-finai ta pecvd:

1. Sanya wafer wafer a kan electrode a cikin ɗakin ajiya.
2. Gabatar da abubuwan da aka kirkira da ayyukan ajiya zuwa ɗakin.
3. Aika plasma tsakanin electrodes da kuma amfani da wutar lantarki don faranta wa platma.
4. Haske mai guba mai guba da kuma amsawa tare da farfadowa don samar da fim ɗin bakin ciki, da byproducts ya fito daga majalisa.

• Gama gari fina-finai da aka ajiye: silicon ya soki, silicon nitride, amorphous silicon,silicon oxynitrides (si_xO_yN_z).

Apcvd

ATMOSPHERHERHERHERHERERPHERERPHERERPHERERPHERER ATMITON VERACK VAPOR SUKE CIKIN SAUKI CIKIN SAUKI CIKIN SAUKI A CIKIN ARMOSPHERIC. Kamar sauran hanyoyin CVD, APCVD na buƙatar gas mai ƙarewa a cikin ɗakin ajiya, to zazzabi a hankali ya tashi don ɗaukar halayen wafer da kuma sanya sandar bakin ciki. Sakamakon saukin wannan hanyar, yana da farashi mai yawa.

• Kayan Fina-kayan gini gama gari: Doped da kuma cire silicon oxides, silicon nitrides. Hakanan ana amfani dashishafewa.

HDP CVD

Babban yawa plasma vapor ajiye pecvd sigar pecvd ne da ke amfani da mafi girma plasma da yawa, wanda ke ba da damar waferma don amsa tare da ƙarancin zafin jiki (tsakanin 80 ° C) a cikin ɗakin ajiya. Wannan kuma yana haifar da fim tare da babban maɓuɓɓugar cika ƙarfin.

• Fina-finai na gama gari: silicon Dioxide (Sio₂), silicon nitride (si₃N₄),silicon carbide (Sic).

M

SubatMospherypheric matsa lamba Vapor ajiye ajiya ya bambanta da sauran hanyoyin saboda yana faruwa a ƙasa daidaitacciyar matsin lamba kuma yana amfani da ozone (o₃) Don taimakawa catalyze. Tsarin ajiya yana faruwa ne a matsakaicin matsin lamba fiye da LPCVD amma ƙasa da APCV da yawa, a cikin kusan kashi 80 ° C, a wane lokaci ya fara raguwa.

• Gama gari fina-finai da aka ajiye:Bpsg, PSG,Teos.

Shandong Zhongpeng Gerimics Co., Ltd yana daya daga cikin manyan silicon Carbide sabon abin duniya a kasar Sin. SIC na fasaha na yumbu: Hardness na MOH 9 (Harshen Moh ya yi wa gaske zuwa lalacewa da lalata zuciya - juriya da antidation na ciki. Rayuwar sabis na SCI shine sau 4 zuwa 5 fiye da kashi 92% na alumina. Mor Mor na RBBIC ne 5 zuwa 7 sau da na SnBSC, ana iya amfani dashi don ƙarin shinge masu hade. Tsarin ambato yana da sauri, isar da shi kamar yadda aka yi alkawarinsa kuma ingancin shine na biyu ga babu. Koyaushe mun dage cikin kalubalantar burinmu kuma mu ba da zuciyarmu ga al'umma.