SiC substrate don murfin fim na CVD

Takaitaccen Bayani:

Kemikal Turin Jigilar Kemikal (CVD) oxide tsari ne na haɓaka madaidaiciya inda iskar gas ɗin gabaɗaya ke ajiye fim ɗin bakin ciki akan wafer a cikin reactor. Tsarin girma yana da ƙananan zafin jiki kuma yana da ƙimar girma mafi girma idan aka kwatanta da thermal oxide. Har ila yau, yana samar da yadudduka na silicon dioxide da yawa saboda an cire fim ɗin, maimakon girma. Wannan tsari yana samar da fim ɗin tare da babban juriya na lantarki, wanda yake da kyau don amfani a cikin na'urorin ICs da MEMS, a tsakanin sauran wasu ...


  • Port:Weifang ko Qingdao
  • Sabon taurin Mohs: 13
  • Babban albarkatun kasa:Silicon Carbide
  • Cikakken Bayani

    ZPC - silicon carbide yumbu masana'anta

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    Zuba Ruwan Sinadari

    Kemikal tururi (CVD) oxide tsari ne na ci gaban layi inda iskar gas na farko ke ajiye fim na bakin ciki akan wafer a cikin reactor. Tsarin girma yana da ƙananan zafin jiki kuma yana da ƙimar girma mafi girma idan aka kwatanta dathermal oxide. Har ila yau, yana samar da yadudduka na silicon dioxide da yawa saboda an cire fim ɗin, maimakon girma. Wannan tsari yana samar da fim tare da babban juriya na lantarki, wanda yake da kyau don amfani a cikin na'urorin ICs da MEMS, a tsakanin sauran aikace-aikace.

    Ana yin iskar sinadari na tururi (CVD) oxide lokacin da ake buƙatar Layer na waje amma mai yuwuwar silikon ba zai iya zama oxidized ba.

    Haɓakar Turin Kemikal:

    Ci gaban CVD yana faruwa ne lokacin da aka shigar da iskar gas ko tururi (precursor) a cikin ma'aunin zafin jiki mai ƙarancin zafi inda aka shirya wafers ko dai a tsaye ko a kwance. Gas yana motsawa ta hanyar tsarin kuma yana rarraba a ko'ina cikin saman wafers. Yayin da waɗannan abubuwan da suka gabata ke motsawa ta cikin injin daskarewa, wafers suna fara ɗaukar su a saman su.

    Da zarar abubuwan da suka gabata sun rarraba a ko'ina cikin tsarin, halayen sinadarai suna farawa tare da saman sassan. Wadannan halayen sinadarai suna farawa kamar tsibirai, kuma yayin da ake ci gaba da aiwatarwa, tsibiran suna girma kuma suna haɗuwa don ƙirƙirar fim ɗin da ake so. Abubuwan sinadaran suna haifar da biproducts a saman wafers, wanda ke yaduwa a kan iyakar iyaka kuma yana gudana daga cikin reactor, barin kawai wafers tare da murfin fim ɗin da aka ajiye.

    Hoto 1

    Tsarin tururi na sinadari

     

    (1.) Gas / tururi fara amsawa da kuma samar da tsibirai a kan substrate surface. (2.) Tsibiri suna girma kuma sun fara haɗuwa tare. (3.) Ci gaba, uniform film halitta.
     

    Fa'idodin Zubar da Turin Sinadari:

    • Low zafin jiki girma tsari.
    • Adadin ajiya mai sauri (musamman APCVD).
    • Ba dole ba ne ya zama silicon substrate.
    • Kyakkyawan ɗaukar hoto (musamman PECVD).
    Hoto 2
    CVD vs. Thermal oxideJigilar Silicon dioxide vs. girma

     


    Don ƙarin bayani kan jibgewar tururin sinadari ko neman fa'ida, don AllahTUNTUBE SVMyau don yin magana da memba na ƙungiyar tallace-tallace mu.


    Nau'in CVD

    LPCVD

    Ƙarƙashin tururin sinadarai na matsi shine daidaitaccen tsarin tattara tururin sinadari ba tare da matsi ba. Babban bambanci tsakanin LPCVD da sauran hanyoyin CVD shine yawan zafin jiki. LPCVD yana amfani da mafi girman zafin jiki don saka fina-finai, yawanci sama da 600°C.

    Ƙananan yanayi yana haifar da fim mai mahimmanci tare da babban tsabta, haɓakawa, da haɗin kai. Ana yin wannan a tsakanin 10 - 1,000 Pa, yayin da ma'auni na ɗakin ɗakin yana da 101,325 Pa. Zazzabi yana ƙayyade kauri da tsabta na waɗannan fina-finai, tare da yanayin zafi mai girma wanda ya haifar da fina-finai mai zurfi da tsabta.

     

    PECVD

    Haɓaka tururin sinadarai na haɓakar Plasma ƙaramin zafin jiki ne, fasaha mai girman girman fim. PECVD yana faruwa a cikin CVD reactor tare da ƙari na plasma, wanda shine iskar gas mai ionized tare da babban abun ciki na lantarki kyauta (~ 50%). Wannan hanya ce mai ƙarancin zafin jiki wanda ke faruwa tsakanin 100 ° C - 400 ° C. Ana iya yin PECVD a ƙananan zafin jiki saboda makamashi daga electrons kyauta yana raba iskar gas mai aiki don samar da fim a saman wafer.

    Wannan hanyar ƙaddamarwa tana amfani da nau'ikan plasma daban-daban guda biyu:

    1. Cold (ba thermal): electrons suna da zafin jiki mafi girma fiye da barbashi na tsaka tsaki da ions. Wannan hanya tana amfani da makamashin lantarki ta hanyar canza matsa lamba a ɗakin ajiya.
    2. Thermal: electrons sune zafin jiki iri ɗaya da barbashi da ions a cikin ɗakin ajiya.

    A cikin ɗakin ajiya, ana aika wutar lantarki-mitar rediyo tsakanin na'urorin lantarki sama da ƙasa da wafer. Wannan yana cajin electrons kuma yana ajiye su cikin yanayi mai daɗi don saka fim ɗin da ake so.

    Akwai matakai huɗu don haɓaka fina-finai ta hanyar PECVD:

    1. Sanya wafern manufa akan lantarki a cikin ɗakin ajiya.
    2. Gabatar da iskar gas mai amsawa da abubuwan da ake ajiyewa zuwa ɗakin.
    3. Aika plasma tsakanin na'urorin lantarki kuma yi amfani da wutar lantarki don tada plasma.
    4. Gas mai amsawa yana rarraba kuma yana amsawa tare da saman wafer don samar da fim na bakin ciki, samfuran da ke bazuwa daga ɗakin.

     

    APCVD

    Tushen sinadarai na matsa lamba na yanayi wata dabara ce mai ƙarancin zafin jiki wacce ke faruwa a cikin tanderu a daidaitaccen yanayin yanayi. Kamar sauran hanyoyin CVD, APCVD na buƙatar iskar gas na farko a cikin ɗakin ajiya, sannan zafin jiki ya tashi a hankali don haɓaka halayen da ke kan farfajiyar wafer kuma saka fim ɗin bakin ciki. Saboda sauƙi na wannan hanya, yana da ƙimar ajiya mai yawa.

    • Fina-finai na yau da kullun da aka ajiye: doped da undoped silicon oxides, silicon nitrides. Hakanan ana amfani dashi a cikinannealing.

    HDP CVD

    Babban yawan tururin sinadarai na plasma wani sigar PECVD ne wanda ke amfani da plasma mai girma mai yawa, wanda ke bawa wafers damar amsawa tare da ƙaramin zafin jiki (tsakanin 80°C-150°C) a cikin ɗakin ajiya. Wannan kuma yana haifar da fim tare da babban ƙarfin cika mahara.

    • Fina-finai na yau da kullun da aka ajiye: silicon dioxide (SiO2), silicon nitride (Si3N4),silicon carbide (SiC).

    SACVD

    Subatmospheric matsa lamba na tururin sinadarai ya bambanta da sauran hanyoyin saboda yana faruwa ƙasa da madaidaicin matsa lamba kuma yana amfani da ozone (O).3) don taimakawa wajen tayar da martani. Tsarin ƙaddamarwa yana faruwa a matsi mafi girma fiye da LPCVD amma ƙasa da APCVD, tsakanin kimanin 13,300 Pa da 80,000 Pa. SACVD fina-finai suna da babban adadin ajiya kuma wanda ke inganta yayin da zafin jiki ya karu har zuwa 490 ° C, a wannan lokacin ya fara raguwa. .

    • Fina-finan gama gari da aka ajiye:BPSGPSG,TEOS.

  • Na baya:
  • Na gaba:

  • Shandong Zhongpeng Special Ceramics Co., Ltd yana daya daga cikin manyan sabbin kayan yumbu na silicon carbide a cikin kasar Sin. SiC fasaha yumbura: Moh's taurin ne 9 (New Moh ta taurin ne 13), tare da m juriya ga yashewa da lalata, m abrasion - juriya da anti-oxidation. Rayuwar sabis na samfurin SiC shine sau 4 zuwa 5 fiye da 92% kayan alumina. MOR na RBSiC shine sau 5 zuwa 7 na SNBSC, ana iya amfani dashi don ƙarin sifofi masu rikitarwa. Tsarin zance yana da sauri, isarwa kamar yadda aka yi alkawari kuma ingancin ba shi da na biyu. Kullum muna dagewa wajen kalubalantar manufofinmu da mayar da zukatanmu ga al'umma.

     

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