I-substrate ye-SiC yokugqoka ifilimu ye-CVD

I-Chemical Vapor Deposition

I-Chemical vapor deposition (CVD) oxide iyinqubo yokukhula eqondile lapho igesi eyandulelayo ifaka ifilimu elincanyana ku-wafer kureactor. Inqubo yokukhula izinga lokushisa eliphansi futhi inezinga eliphezulu lokukhula uma liqhathaniswai-thermal oxide. Iphinde ikhiqize izendlalelo ze-silicon dioxide ezacile kakhulu ngoba ifilimu isusiwe esikhundleni, kunokuba ikhule. Le nqubo ikhiqiza ifilimu enokumelana nogesi okuphezulu, okuhle kakhulu ukusetshenziswa kuma-ICs namadivayisi we-MEMS, phakathi kwezinye izinhlelo zokusebenza eziningi.

I-Chemical vapor deposition (CVD) oxide yenziwa uma ungqimba lwangaphandle ludingeka kodwa i-silicon substrate ingase ingakwazi ukufakwa i-oxidized.

Ukukhula Kwe-Chemical Vapor Deposition:

Ukukhula kwe-CVD kwenzeka lapho igesi noma umhwamuko (i-precursor) yethulwa endaweni yokushisa ephansi lapho ama-wafers ahlelwa ngokuqondile noma ngokuvundlile. Igesi ihamba ohlelweni futhi isakaza ngokulinganayo ebusweni bamawafa. Njengoba lezi zandulela zihamba nge-reactor, ama-wafers aqala ukuwamunca ebusweni bawo.

Uma izandulela sezisabalalise ngokulinganayo ohlelweni lonke, ukuhlangana kwamakhemikhali kuqala ngaphezu kwama-substrates. Lokhu kusabela kwamakhemikhali kuqala njengeziqhingi, futhi njengoba inqubo iqhubeka, lezi ziqhingi ziyakhula futhi zihlangane ukuze zenze ifilimu efunwayo. Ukusabela kwamakhemikhali kudala ama-biproducts ngaphezulu kwamawafa, asabalele ngaphesheya kongqimba lomngcele futhi ageleze aphume ku-reactor, kushiye amawafa nje anefilimu yawo efakwe ifilimu.

Umfanekiso 1

Izinzuzo Ze-Chemical Vapor Deposition:

• Inqubo yokukhula kwezinga lokushisa eliphansi.
• Izinga lokubeka ngokushesha (ikakhulukazi i-APCVD).
• Akufanele kube yi-silicon substrate.
• Ukufakwa kwezinyathelo ezinhle (ikakhulukazi i-PECVD).

Umfanekiso 2
Ukufakwa kwe-silicon dioxide ngokumelene nokukhula

Ukuze uthole ulwazi olwengeziwe mayelana nokufakwa komhwamuko wamakhemikhali noma ukucela ikhotheshini, sicelaXHUMANA ne-SVMnamuhla ukukhuluma nelungu lethimba lethu labadayisi.

Izinhlobo ze-CVD

I-LPCVD

I-low pressure chemical vapor deposition iyinqubo evamile yokubeka umhwamuko wamakhemikhali ngaphandle kokucindezela. Umehluko omkhulu phakathi kwe-LPCVD nezinye izindlela ze-CVD izinga lokushisa lokubeka. I-LPCVD isebenzisa izinga lokushisa eliphakeme kakhulu ukufaka amafilimu, ngokuvamile ngaphezu kuka-600°C.

Indawo enengcindezi ephansi idala ifilimu efanayo kakhulu enokuhlanzeka okuphezulu, ukukhiqiza kabusha, kanye ne-homogeneity. Lokhu kwenziwa phakathi kuka-10 - 1,000 Pa, kuyilapho ukucindezela kwegumbi okujwayelekile kungu-101,325 Pa. Izinga lokushisa linquma ukushuba nokuhlanzeka kwalawa mafilimu, amazinga okushisa aphezulu abangela amafilimu aqinile futhi acwenge kakhulu.

• Amafilimu ajwayelekile afakiwe:i-polysilicon, i-doped & undoped oxides,ama-nitrides.

I-PECVD

I-Plasma ethuthukisiwe ukufakwa komhwamuko wamakhemikhali izinga lokushisa eliphansi, indlela yokubeka ifilimu ephezulu. I-PECVD yenzeka ku-rector ye-CVD ngokungezwa kwe-plasma, okuyigesi eyingxenye ye-ionized enokuqukethwe okuphezulu kwama-electron wamahhala (~50%). Lena indlela yokubeka izinga lokushisa eliphansi eyenzeka phakathi kuka-100°C - 400°C. I-PECVD ingenziwa emazingeni okushisa aphansi ngoba amandla avela kuma-electron amahhala ahlukanisa amagesi asebenzayo ukuze akhe ifilimu endaweni eyi-wafer.

Le ndlela yokubeka isebenzisa izinhlobo ezimbili ezihlukene ze-plasma:

1. Kubanda (okungezona ezishisayo): ama-electron anezinga lokushisa eliphakeme kunezinhlayiya ezingathathi hlangothi nama-ion. Le ndlela isebenzisa amandla ama-electron ngokushintsha ingcindezi ekamelweni lokubeka.
2. I-Thermal: ama-electron ayizinga lokushisa elifanayo nezinhlayiya nama-ion ekamelweni lokubeka.

Ngaphakathi kwegumbi lokubeka, i-voltage ye-radio-frequency ithunyelwa phakathi kwama-electrode ngaphezulu nangaphansi kwewafa. Lokhu kushaja ama-electron futhi kuwagcina esesimweni esijabulisayo ukuze kufakwe ifilimu oyifunayo.

Kunezinyathelo ezine zokukhulisa amafilimu nge-PECVD:

1. Beka isicwecwana esiyithagethi ku-electrode ngaphakathi kwegumbi lokubeka.
2. Yethula amagesi asebenzayo kanye nezinto zokubeka ekamelweni.
3. Thumela i-plasma phakathi kwama-electrode futhi usebenzise i-voltage ukuze ujabulise i-plasma.
4. Igesi esebenzayo iyahlukanisa futhi ihlangane ne-wafer surface yakhe ifilimu elincanyana, imikhiqizo ephumayo isakazeka ngaphandle kwegumbi.

• Amafilimu ajwayelekile afakiwe: i-silicon oxides, i-silicon nitride, i-amorphous silicon,i-silicon oxynitrides (Si_xO_yN_z).

I-APCVD

Umfutho we-atmospheric chemical vapor deposition yindlela yokubeka izinga lokushisa eliphansi eyenzeka esithandweni ngomfutho womoya ojwayelekile. Njengezinye izindlela ze-CVD, i-APCVD idinga igesi eyandulelayo ngaphakathi kwegumbi lokubeka, bese izinga lokushisa likhuphuka kancane ukuze libangele ukusabela endaweni eyilucwecwana bese lifaka ifilimu elincanyana. Ngenxa yobulula bale ndlela, inezinga lokubeka eliphezulu kakhulu.

• Amafilimu ajwayelekile afakiwe: ama-silicon oxides ane-doped futhi avuliwe, ama-silicon nitrides. Iphinde isetshenziswe kuukwehlisa.

I-HDP CVD

I-high density plasma chemical vapor deposition inguqulo ye-PECVD esebenzisa i-plasma ephakeme kakhulu, evumela ama-wafers ukuthi asabele ngezinga lokushisa eliphansi nakakhulu (phakathi kuka-80°C-150°C) ngaphakathi kwegumbi lokubeka. Lokhu futhi kudala ifilimu enamandla amakhulu okugcwalisa umsele.

• Amafilimu ajwayelekile afakiwe: i-silicon dioxide (SiO₂), i-silicon nitride (Si₃N₄),i-silicon carbide (SiC).

I-SACVD

I-Suatmospheric chemical pressure deposition of vapor deposition ihlukile kwezinye izindlela ngoba iyenzeka ngaphansi komfutho wegumbi ojwayelekile futhi isebenzisa i-ozone (O₃) ukusiza ukuvuselela ukusabela. Inqubo yokubeka yenzeka ngengcindezi ephakeme kune-LPCVD kodwa ephansi kune-APCVD, phakathi kuka-13,300 Pa kanye no-80,000 Pa. Amafilimu e-SACVD anezinga eliphezulu lokubeka futhi elithuthukayo njengoba izinga lokushisa likhuphuka lize lifike cishe ku-490°C, lapho liqala khona ukuncipha. .

• Amafilimu ajwayelekile afakiwe:I-BPSG, PSG,I-TEOS.

I-Shandong Zhongpeng Special Ceramics Co., Ltd ingesinye sezixazululo ezintsha ze-silicon carbide zobumba eChina. I-ceramic yobuchwepheshe ye-SiC: Ubulukhuni be-Moh buyi-9 (ukuqina kwe-Moh entsha yi-13), enokumelana okuhle nokuguguleka nokugqwala, ukuhuzuka okuhle kakhulu – ukumelana ne-oxidation. Impilo yesevisi yomkhiqizo we-SiC iyinde izikhathi ezi-4 kuya kwezi-5 kune-alumina material engu-92%. I-MOR ye-RBSiC izikhathi ezi-5 kuye kweziyi-7 kune-SNBSC, ingasetshenziselwa izimo eziyinkimbinkimbi. Inqubo yekhotheshini iyashesha, ukulethwa kunjengoba kuthenjisiwe futhi ikhwalithi ingeyesibili. Sihlala siphikelela ekuphonseni inselelo imigomo yethu futhi sibuyisele izinhliziyo zethu emphakathini.