I-Sic Substrate ye-CVD film coating

Isimo se-Chemical Vapor

I-Chemical Vapor Deposition (CVD) oxide inqubo yokukhula eqondile lapho igesi yangaphambili ifaka ifilimu elincanyana kwi-wafer ephendukayo. Inqubo yokukhula iyindlela ephansi yokushisa futhi inenani lokukhula eliphakeme kakhulu uma liqhathaniswaI-Thermal oxide. Iphinde ikhiqize izingqimba ze-silicon dioxide eningi ngoba ifilimu liye lawona, kunokuba likhule. Le nqubo ikhiqiza ifilimu elinokumelana kagesi okuphezulu, okulungele ukusetshenziswa kumadivayisi we-ICS kanye nama-MEMS, phakathi kwezinye izinhlelo eziningi.

I-Chemical Vapor Deposition (CVD) I-Oxide yenziwa lapho kudingeka ungqimba lwangaphandle kepha i-silicon substrate kungenzeka ingakwazi ukufakwa oxidized.

Ukukhula kwe-Chemical Vapor Deposition:

Ukukhula kwe-CVD kwenzeka lapho igesi noma i-vapor (i-presersor) yethulwa emhlanganweni wokushisa okuphansi lapho ama-wafers ahlelwe khona ngokuqondile noma ngokuvundlile. Igesi ihamba ngohlelo futhi isabalalisa ngokufana nobuso be-wafers. Njengoba laba banduleli behamba nge-reactor, ama-wafers aqala ukubamukeli ebusweni bawo.

Lapho nje ama-PreverRoad asatshalaliswe ngokulinganayo kulo lonke uhlelo, ukuphendula kwamakhemikhali kuqala ebusweni bezigatshana. Lokhu kusabela kwamakhemikhali kuqala njengeziqhingi, futhi njengoba inqubo iyaqhubeka, iziqhingi zikhula futhi zihlangana ukudala ifilimu oyifunayo. Ukuphendula kwamakhemikhali kwakha ama-biproducts ebusweni bama-wafers, aphazamisa ungqimba lomngcele futhi aphume ngaphandle kwe-reactoric, ashiye nje ama-wafers anama-coating abo abekelwe amafilimu.

Umdwebo 1

Izinzuzo ze-Chemical Vapor Deposition:

• Inqubo yokukhula kokushisa okuphansi.
• Isilinganiso sokubekwa esisheshayo (ikakhulukazi i-apcvd).
• Akudingeki ukuba ube yi-silicon substrate.
• Ukumbozwa okuhle kwesinyathelo (ikakhulukazi i-pecvd).

Umdwebo 2
I-Silicon Dioxide Deposition vs. Ukukhula

Ngeminye imininingwane mayelana nokufakwa esikhundleni samakhemikhali noma ukucela isilinganiso, ngicelaThinta svmNamuhla ukukhuluma nelungu leqembu lethu lokuthengisa.

Izinhlobo ze-CVD

I-LPCVD

Ingcindezelo yengcindezelo yengcindezelo yengcindezelo yamakhemikhali iyinqubo ejwayelekile ye-Vapor vapor ngaphandle kokucindezelwa. Umehluko omkhulu phakathi kwe-LPCVD nezinye izindlela ze-CVD ukushaya okushisa. I-LPCVD isebenzisa izinga lokushisa eliphakeme kakhulu kumafilimu wediphozithi, ngokuvamile ngenhla kwama-600 ° C.

Imvelo yengcindezi ephansi yakha ifilimu efanayo enomfaniswano onobuhlango obuphezulu, ukuvela kabusha kanye ne-homogeneity. Lokhu kwenziwa phakathi kuka-10 - 1 000 pa, ngenkathi ukucindezela kwegumbi elijwayelekile kungu-101,325 pa. Ukushisa kunquma ubukhulu balawa mafilimu, okunamazinga okushisa aphezulu aqhamuka kumafilimu ahlanzekile nama-puree.

• Amafilimu ajwayelekile afakiwe:polysilicon, ama-oxides ahlanganisiwe futhi ahliwe,nitrides.

Pecvd

I-Plasma Enhhhanced Vapor Deposition iyindlela ephansi yokushisa, inqubo ephezulu yefilimu desition. I-PECVD yenzeka kwi-CVD reaction ngokungezwa kwe-plasma, okuyigesi ye-Iorized ngokwengxenye enokuqukethwe okuphezulu kwe-elektroni (~ 50%). Le ndlela yokushisa ephansi yokushisa eyenzeka phakathi kuka-100 ° C - 400 ° C. I-Pecvd ingenziwa emazingeni okushisa aphansi ngoba amandla avela kuma-elektroni wamahhala ahlukanisa amagesi asebenzayo ukuze akhe ifilimu endaweni ephansi.

Le ndlela yokubekwa isebenzisa izinhlobo ezimbili ezihlukile ze-plasma:

1. Ibanda (okungeyona eye-Thermal): Ama-elektroni anokushisa okuphezulu kunezinhlayiya ezingathathi hlangothi nama-ion. Le ndlela isebenzisa amandla ama-elektroni ngokushintsha ingcindezi egumbini lokubekwa.
2. I-Thermal: Ama-elektroni anokushisa okufanayo njengezinhlayiya nama-ion egumbini lokugcina.

Ngaphakathi kwegumbi lokubekwa esikhundleni, i-Volfage ye-Radio-Frequency ihanjiswa phakathi kwama-electrode angenhla nangaphansi kwe-wafer. Lokhu kukhokhisa ama-elektroni futhi akugcine esesimweni esihle kakhulu sokufaka ifilimu oyifunayo.

Kunezinyathelo ezine zokukhulisa amafilimu nge-PECVD:

1. Faka i-Target wafer ku-electrode ngaphakathi kwegumbi lokubekwa.
2. Yethula amagesi asebenzayo kanye nezinto zokubeka egumbini.
3. Thumela i-plasma phakathi kwama-electrodes futhi usebenzise i-voltage ukuze ujabulise i-plasma.
4. Ukuhlanza igesi esebenzayo futhi uphendule ngesigcawu se-wafer ukuze wakhe ifilimu elincanyana, ama-byproducts aphazamisa iChamber.

• Amafilimu ajwayelekile afakiwe: Silicon Oxides, Silicon Nitride, Amorphous Silicon,I-Silicon Oxynitrides (si_xO_yN_z).

I-APCVD

Ukucindezela komkhathi kwa-Atmoskervery Cheffer Chemical Vapor kuyindlela ephansi yokushisa yokushisa eyenzeka esithandweni somfutho ojwayelekile womkhathi. Njengezinye izindlela ze-CVD, i-APCVD idinga igesi ephambi kwe-ges ngaphakathi kwegumbi lokubekwa esikhundleni, izinga lokushisa likhuphuka kancane ukuze libambe ukucabanga okusabela endaweni ebheke phezulu bese kufakwa ifilimu elincanyana. Ngenxa yokulula kwale ndlela, inezinga eliphakeme kakhulu lemithi.

• Amafilimu ajwayelekile afakiwe: Ama-Silicoxides ahlanganisiwe futhi angaqediwe. Futhi isetshenziswe ngaphakathi-dumaleyo.

I-HDP CVD

I-High Density Plasma Chemity Chemical Design inguqulo ye-PECVD esebenzisa i-plasma ephakeme ye-density, evumela ama-wafers ukuthi aqhubeke nokushisa okuphansi (phakathi kwamaphesenti angama-80 ° C-150 ° C) ngaphakathi kwegumbi lokubekwa. Lokhu kudala nefilimu enamakhono amakhulu wokugcwalisa ama-trench.

• Amafilimu ajwayelekile afakiwe: i-silicon dioxide (sio₂), i-silicon nitride (si₃N₄),I-Silicon Carbide (Sic).

Isihlalo sakwaSacvd

I-Sugatmospheric Pressure Chefge Chefge Chefge Chefge Chefge Cheficover Deser kusuka kwezinye izindlela ngoba yenzeka ngaphansi kwengcindezi yegumbi elijwayelekile futhi isebenzisa i-Ozone (O₃) ukusiza uCataryze ukusabela. Inqubo yokubekwa yenzeka yenzeka ekucindezelweni okuphezulu kune-LPCVD kepha iphansi kune-APCVD, phakathi kwe-13 30,000 PA.

• Amafilimu ajwayelekile afakiwe:Uhlobo, I-PSG,Amatula.

I-Shandong Zhongpeng ekhethekile ye-ceramics Co, Ltd ingenye yezixazululo ezinkulu kakhulu ze-silicon Carbide Ceramic Ceramic Ceramic Centamic eChina. I-SIC technical Team: Ubulukhuni bukaMoh bungu-9 (Ubulukhuni bakwaMoh abasezingeni eliphakeme bungu-13), ngokumelana okuhle nokuguguleka nokugqwala, ukumelana kahle nokulwa no-oxidation kanye nokulwa no-oxidation. Impilo ye-Sic Product's Service i-4 kuye ku-5 izikhathi ezingaphezu kwezingu-92% izinto ze-alumina. I-MOR ye-ROR ye-RBSIC izikhathi ezi-5 kuye kwezingu-7 ezokwenziwa, zingasetshenziselwa ukwakheka okuxakile. Inqubo yokucaphuna iyashesha, ukulethwa kuthenjisiwe futhi ikhwalithi ingeyesibili. Siqhubeka njalo ekuphonseni izinhloso zethu futhi sibuyise izinhliziyo zethu emphakathini.