Carbide ye-silicon Carbide ephindelela kabusha (RXSIC, resic, RSIC, R-SIC). Izinto eziqala zodwa ziyi-ailcon carbide. Azikho izinsiza zokuncishiswa ezisetshenzisiwe. I-compacts eluhlaza ifudunyezwa ngaphezulu kuka-2200ºC ngokuhlanganiswa kokugcina. Izinto ezivelayo zine-25% ye-pority ecishe ibe ngu-25%, ekhawulela izakhiwo zayo zemishini; Kodwa-ke, lokho okubonakalayo kungakuhlanza kakhulu. Inqubo inomnotho kakhulu.
Ukuphendula kwe-silicon carbide (RBSIC). Izinto zokuqala zokuqala ziyikhabhoni e-salbide ye-silicon carbide kanye nekhabhoni. Ingxenye eluhlaza bese ifakwa ngaphakathi nge-silicon ebilisiwe ngenhla kwe-1450ºC ngokuphendula: Sic + C + Si -> I-SIC. Ngokuvamile i-misfructure inesilinganiso esithile se-silicon eyeqile, ekhawulela izakhiwo zayo zokushisa eziphakeme kanye nokuphikiswa kokugqwala. Ushintsho oluncane olubunjiwe lwenzeka ngesikhathi senqubo; Kodwa-ke, ungqimba lwe-silicon uvame ukuba khona ebusweni bengxenye yokugcina. I-ZPC RBSIC yamukelwa ubuchwepheshe obuthuthukisiwe, ikhiqiza ukumelana nokungamelana nokugqokwa, amapuleti, amathayili, izivunguvungu, izingxenye ezingekho emthethweni, nokuvimbela ukuqina kanye nokuqina, amapayipi, amapayipi, amashubhu nokunye.
I-nitride bond salicon Carbide (NSIC, NSIC). Izinto zokuqala ezivuthiwe ziyi-silicon Carbide kanye ne-silicon powder. I-compact eluhlaza ixoshwa emkhathini we-nitrogen lapho ukusabela kwengqondo + 3si + 2N2 -> Sic + Si2n4 yenzeka. Izinto zokugcina zibonisa ushintsho oluncane oluyimpumo ngesikhathi sokucutshungulwa. Izinto ezibonakalayo zibonisa izinga elithile le-porolity (imvamisa cishe ngo-20%).
Uqondise i-misticon carbide (SSIC). I-Silicon Carbide iyinto yokuqala eluhlaza. I-Densification Aids yiBoron Plus Carbon, futhi ukufana kwenzeka ngenqubo yokusabela okuqinile ngenhla kwe-2200ºC. Izakhiwo zalo zokubeletha kanye nokumelana nokugqwala ziphakeme ngenxa yokuntuleka kwesigaba sesibili sengilazi emingceleni yokusanhlamvu.
Isigaba se-Liquid sine-silicon Carbide (LSSIC). I-Silicon Carbide iyinto yokuqala eluhlaza. I-Densificatize Aids yi-ytttrium oxide plus aluminium oxide. Ukucaciswa kwenzeka ngenhla kwe-2100ºC ngokusabela kwesigaba se-liquid futhi kuphumela esigabeni sesibili sengilazi. Izakhiwo zemishini ziphakeme kakhulu kune-SSIC, kepha izakhiwo ezishisa kakhulu kanye nokumelana nokugqwala akukuhle.
I-Carbide eshisayo eshisayo ye-Silicon (i-HPSIC). I-Silicon Carbide Powder isetshenziswa njengento yokuqala eluhlaza. I-Densification Aids ngokuvamile iBoron Plus Carbon noma i-YTtrium Oxide Plus aluminium oxide. Ukuhlelwa kwenzeka ngohlelo lokusebenza kanyekanye lwengcindezi yemishini nokushisa ngaphakathi kwe-graphite die cavity. Izimo zingamapuleti alula. Amanani aphansi we-AIDS esona angasetshenziswa. Izakhiwo zemishini zezinto ezicindezelwe ezishisayo zisetshenziswa njengezisekelo eziphikisana nalezi ezinye izinqubo eziqhathaniswa. Izakhiwo zikagesi zingashintshwa ngoshintsho ezinsizakalweni zokuhlaziya.
CVD Silicon Carbide (CVSIC). Lokhu okuqukethwe kwenziwa yinqubo yamakhemikhali ye-VAPOR Deposition (CVD) ebandakanya ukusabela: CH3SICL3 -> Sic + 3hcl. Ukusabela kwenziwa ngaphansi komoya we-H2 nge-SIC kufakwa kwi-graphite substrate. Inqubo inqubo iholela entweni ebumsulwa kakhulu; Kodwa-ke, kuphela amapuleti alula angenziwa. Inqubo ibiza kakhulu ngenxa yezikhathi zokuphendula ezihamba kancane.
I-Chemical Vapor composite silicon Carbide (CVCSIC). Le nqubo iqala nge-praphite ye-graphite yangaphambili etholwa amajamo aseduze nenetha esimweni se-graphite. Inqubo yokuguqulwa ibeka ingxenye ye-graphite eya e-Situ vapor eqinile reaction reaction ukukhiqiza i-polycrystalline, i-stoichiimetrically sic. Le nqubo elawulwa ngokuqinile ivumela ukwakheka okuyinkimbinkimbi okumele kukhiqizwe engxenyeni eguqulwe ngokuphelele eguqulwe ngokuphelele enezici ezivuthayo eziqinile nobumsulwa obuphezulu. Inqubo yokuguqula inciphisa isikhathi esijwayelekile sokukhiqiza futhi inciphise izindleko ngaphezu kwezinye izindlela. * Umthombo (ngaphandle kwalapho kuphawuleka): ICeradyne Inc.
Isikhathi sePosi: Jun-16-2018