I-Silicon Carbide eyenziwe kabusha (RXSIC, ReSIC, RSIC, R-SIC). Impahla yokuqala eluhlaza yi-silicon carbide. Azikho izinsiza zokuhlanganisa ezisetshenziswayo. Ama-compact aluhlaza ashiselwa ngaphezu kuka-2200ºC ukuze ahlanganiswe okokugcina. Izinto ezitholakalayo zine-porosity engaba ngu-25%, ebeka umkhawulo emikhiqizweni yayo; nokho, impahla ingaba msulwa kakhulu. Inqubo iyonga kakhulu.
I-Reaction Bonded Silicon Carbide (RBSIC). Izinto zokuqala zokusetshenziswa yi-silicon carbide plus carbon. Ingxenye eluhlaza ibe isingeniswa nge-silicon encibilikisiwe ngaphezu kuka-1450ºC ngokusabela: SiC + C + Si -> SiC. I-microstructure ngokuvamile inenani elithile le-silicon eyeqile, ekhawulela izakhiwo zayo zokushisa okuphezulu nokumelana nokugqwala. Ushintsho oluncane lwe-dimensional lwenzeka phakathi nenqubo; nokho, ungqimba lwe-silicon luvame ukuba khona ebusweni bengxenye yokugcina. I-ZPC RBSiC yamukelwa ubuchwepheshe obuthuthukisiwe, ikhiqiza ulwelwesi lokumelana nokugqokwa, amapuleti, amathayela, ulwelwesi lwe-cyclone, amabhlogo, izingxenye ezingajwayelekile, kanye nokugqoka nokugqwala imibhobho ye-FGD, isishintshi sokushisa, amapayipi, amashubhu, nokunye.
I-Nitride Bonded Silicon Carbide (NBSIC, NSIC). Izinto zokuqala zokusetshenziswa yi-silicon carbide kanye ne-silicon powder. I-compact eluhlaza ixoshwa emkhathini we-nitrogen lapho ukusabela kwe-SiC + 3Si + 2N2 -> SiC + Si3N4 kwenzeka. Into yokugcina ibonisa ushintsho oluncane lobukhulu phakathi nokucubungula. Izinto ezibonakalayo zibonisa izinga elithile le-porosity (imvamisa cishe ama-20%).
I-Sintered Silicon Carbide eqondile (SSIC). I-silicon carbide iyimpahla yokuqala eluhlaza. Izinsiza zokuhlanganisa ziyi-boron plus carbon, futhi ukuminyana kwenzeka ngenqubo yokusabela yesimo esiqinile ngaphezu kuka-2200ºC. Izici zayo zokushisa okuphezulu nokumelana nokugqwala kuphakeme ngenxa yokuntuleka kwesigaba sesibili esiyingilazi emingceleni yokusanhlamvu.
I-Liquid Phase Sintered Silicon Carbide (LSSIC). I-silicon carbide iyimpahla yokuqala eluhlaza. Izinsiza zokuhlanganisa i-yttrium oxide kanye ne-aluminium oxide. Ukuminyana kwenzeka ngaphezu kuka-2100ºC ngokusabela kwesigaba soketshezi futhi kuholela esigabeni sesibili esiyingilazi. Izakhiwo zemishini ngokuvamile ziphakeme kune-SSIC, kodwa izakhiwo zezinga lokushisa eliphezulu nokumelana nokugqwala akuzinhle kangako.
I-Silicon Carbide Ecindezelwe Okushisayo (HPSIC). I-silicon carbide powder isetshenziswa njengento yokuqala eluhlaza. Izinsiza zokuhlanganisa ngokuvamile ziyi-boron kanye ne-carbon noma i-yttrium oxide kanye ne-aluminium oxide. Ukuminyana kwenzeka ngokusetshenziswa kanyekanye kokucindezela komshini kanye nezinga lokushisa ngaphakathi kwe-graphite die cavity. Amajamo angamapuleti alula. Amanani aphansi ezinsiza zokucula angasetshenziswa. Izakhiwo zemishini yezinto ezicindezelwe ezishisayo zisetshenziswa njengesisekelo lapho kuqhathaniswa nezinye izinqubo. Izakhiwo zikagesi zingashintshwa ngokushintsha kwezinsiza zokuhlanganisa.
I-CVD Silicon Carbide (CVDSIC). Le nto yenziwa inqubo yokubeka umhwamuko wamakhemikhali (CVD) ehlanganisa ukusabela: CH3SiCl3 -> SiC + 3HCl. Ukusabela kwenziwa ngaphansi komkhathi we-H2 lapho i-SiC ifakwa ku-graphite substrate. Inqubo iphumela ekuhlanzekeni okuphezulu kakhulu; nokho, amapuleti alula kuphela angenziwa. Inqubo ibiza kakhulu ngenxa yezikhathi zokusabela kancane.
I-Chemical Vapor Composite Silicon Carbide (CVCSiC). Le nqubo iqala nge-precursor ye-graphite yobunikazi efakwe ngomshini ibe yizimo eziseduze nenetha kusimo se-graphite. Inqubo yokuguqula ingaphansi kwengxenye yegraphite ku-in situ vapor solid-state reaction ukuze kukhiqizwe i-polycrystalline, i-SiC elungile ngokwe-stoichiometrically. Le nqubo elawulwa ngokuqinile ivumela imiklamo eyinkimbinkimbi ukuthi ikhiqizwe engxenyeni ye-SiC eguqulwe ngokuphelele enezici zokubekezelela okuqinile kanye nokuhlanzeka okuphezulu. Inqubo yokuguqulwa ifinyeza isikhathi esivamile sokukhiqiza futhi yehlise izindleko ngaphezu kwezinye izindlela.* Umthombo (ngaphandle kwalapho kuphawulwe khona): Ceradyne Inc., Costa Mesa, Calif.
Isikhathi sokuthumela: Jun-16-2018