SiC - Silicon Carbide

I-Silicon carbide yatholwa ngo-1893 njenge-abrasive yezimboni yamasondo okugaya namabhuleki ezimoto. Cishe phakathi nekhulu lama-20, ukusetshenziswa kwe-SiC wafer kwakhula kwafaka phakathi ubuchwepheshe be-LED. Kusukela lapho, iye yanda yaba izinhlelo zokusebenza eziningi ze-semiconductor ngenxa yezakhiwo zayo ezizuzisayo zomzimba. Lezi zakhiwo zibonakala ezinhlobonhlobo eziningi zokusetshenziswa ngaphakathi nangaphandle kwemboni ye-semiconductor. Njengoba uMthetho kaMoore ubonakala ufinyelela umkhawulo wawo, izinkampani eziningi embonini ye-semiconductor zibheke ku-silicon carbide njengempahla ye-semiconductor yesikhathi esizayo. I-SiC ingakhiqizwa kusetshenziswa ama-polytypes amaningi e-SiC, nakuba ngaphakathi kwemboni ye-semiconductor, ama-substrates amaningi angaba yi-4H-SiC, kanti i-6H- iyancipha njengoba imakethe ye-SiC ikhula. Uma kubhekiselwa ku-4H- kanye ne-6H-silicon carbide, i-H imele ukwakheka kwe-crystal lattice. Inombolo imele ukulandelana kokunqwabelanisa kwama-athomu ngaphakathi kwesakhiwo sekristalu, lokhu kuchazwe eshadini lamakhono e-SVM elingezansi. Izinzuzo Zokuqina Kwe-Silicon Carbide Ziningi izinzuzo zokusebenzisa i-silicon carbide ngaphezu kwama-silicon substrates endabuko. Enye yezinzuzo ezinkulu zalolu lwazi ubulukhuni bayo. Lokhu kunikeza impahla izinzuzo eziningi, ngesivinini esikhulu, izinga lokushisa eliphezulu kanye/noma izinhlelo zokusebenza zamandla kagesi aphezulu. Ama-wafers e-silicon carbide ane-conductivity ephezulu ye-thermal, okusho ukuthi angadlulisa ukushisa kusuka kwelinye iphuzu kuya kwelinye umthombo. Lokhu kuthuthukisa ukuqhutshwa kwayo kukagesi futhi ekugcineni kwenziwe i-miniaturization, enye yezinhloso ezijwayelekile zokushintshela kumawafa e-SiC. Amandla okushisa ama-SiC substrates nawo ane-coefficient ephansi yokwandisa ukushisa. Ukunwetshwa kwe-thermal yinani nendlela into enwetshwa ngayo noma inkontileka njengoba ishisa noma iphola. Incazelo evame kakhulu iqhwa, nakuba liziphatha ngokuphambene nezinsimbi eziningi, liyakhula njengoba liphola futhi lincipha njengoba lishisa. I-coefficient ephansi ye-silicon carbide yokunwetshwa okushisayo isho ukuthi ayishintshi kakhulu ngosayizi noma umumo njengoba ifudunyezwa noma ipholiswa phansi, okuyenza ifaneleke ukulingana kumadivayisi amancane nokupakisha ama-transistors amaningi ku-chip eyodwa. Enye inzuzo enkulu yalawa ma-substrates ukumelana kwawo okuphezulu nokushisa okushisayo. Lokhu kusho ukuthi banamandla okushintsha amazinga okushisa ngokushesha ngaphandle kokuphuka noma ukuqhekeka. Lokhu kudala inzuzo ecacile lapho kwenziwa amadivaysi njengoba kungenye izici zokuqina ezithuthukisa impilo yonke nokusebenza kwe-silicon carbide uma kuqhathaniswa ne-silicon eyinqwaba evamile. Phezu kwamakhono ayo okushisa, iyi-substrate ehlala isikhathi eside futhi ayiphenduli ngama-acids, ama-alkali noma usawoti oncibilikisiwe emazingeni okushisa afinyelela ku-800 ° C. Lokhu kunikeza lawa ma-substrates ukuguquguquka kwezinhlelo zokusebenza zawo futhi kusiza ngokuqhubekayo amandla awo okukhipha i-silicon eningi ezinhlelweni eziningi. Amandla ayo emazingeni okushisa aphezulu aphinde ayivumele ukuthi isebenze ngokuphepha emazingeni okushisa angaphezu kuka-1600°C. Lokhu kuyenza ibe i-substrate efanelekile cishe kunoma yisiphi isicelo sokushisa okuphezulu.