Sic - Silicon Carbide

I-Silicon Carbide yatholakala ngo-1893 njengezimboni ezihlangene ngamasondo okugaya namabhuleki ezimoto. Cishe maphakathi nekhulu lama-20, i-Sic Wafer isebenzisa i-Grew ukufaka ubuchwepheshe be-LED. Kusukela lapho, iye yandida yaba izinhlelo zokusebenza eziningi ze-semiconductor ngenxa yezakhiwo zayo ezizuzisayo. Lezi zakhiwo zibonakala ezinhlobonhlobo zalo ezahlukahlukene futhi ngaphandle komkhakha we-semiconductor. Ngomthetho kaMoore ubonakale ukufinyelela umkhawulo, izinkampani eziningi ngaphakathi kwe-semiconductor imboni zibheke eSilicon Carbide njengezinto ze-semiconductor zesikhathi esizayo. I-SIC ingakhiqizwa kusetshenziswa ama-polytypes amaningi we-sycty, yize ngaphakathi komkhakha we-semiconductor, iningi lama-substrates kungaba nge-4h-sic, nge-6h- libe lijwayelekile njengoba imakethe ye-SIC ikhule. Lapho kubhekiswa ku-4h-- no-6h- silicon Carbide, i-H imele ukwakheka kwe-crystal lattice. Inombolo imele ukulandelana kokufaka kwama-athomu ngaphakathi kwesakhiwo sekristalu, lokhu kuchazwe kumashadi we-SVM Active ngezansi. Izinzuzo zobulukhuni be-silicon Carbide Kunezinzuzo eziningi zokusebenzisa i-silicon carbide ngaphezulu kwama-silicon substrates amaningi. Enye yezinzuzo ezinkulu zalokhu okubonakalayo ubulukhuni balo. Lokhu kunikeza ukwaziswa kwezinzuzo eziningi, ngesivinini esikhulu, izinga lokushisa eliphakeme kanye / noma izinhlelo zokusebenza eziphakeme ze-voltage. I-Silicon Carbide Wafers inokuphamba okuphezulu okushisayo, okusho ukuthi bangakwazi ukudlulisa ukushisa kusuka endaweni eyodwa kuya komunye umthombo. Lokhu kuthuthukisa ukuqina kwalo kagesi futhi ekugcineni okuncane, enye yezinhloso ezijwayelekile zokushintshela ku-Sic Wafers. Amandla we-Thermal Sic Subrates nawo ane-coeffession ephansi yokwanda okushisayo. Ukunwetshwa kwe-Thermal inani kanye nokuqondisa okuqukethwe okunwebekayo noma izinkontileka njengoba kushisa noma kupholile. Incazelo evame kakhulu yiqhwa, yize iziphatha okuphambene nezinsimbi eziningi, ziyanda njengoba ziphola futhi zinciphe njengoba zifudumeza. I-Silicon Carbide ephansi yokunwetshwa kwe-thermal isho ukuthi ayiguquki kakhulu ngosayizi noma ukwakheka njengoba ifudumele noma ipholile, okwenza kube yinto ephelele ukuze ifinyelele kumadivayisi amancane futhi ipakishe izingcindezi eziningi ku-chip eyodwa. Enye inzuzo enkulu yalawa ma-substrates ukumelana kwabo okuphezulu kokushaqeka kwe-thermal. Lokhu kusho ukuthi banekhono lokushintsha amazinga okushisa asheshe ngaphandle kokuphula noma ukuqhekeka. Lokhu kudala inzuzo ecacile lapho kuklama amadivaysi njengoba kungenye yezimpawu ezinzima ezithuthukisa impilo yonke nokusebenza kwe-silicon carbide ngokuqhathaniswa nenqwaba ye-silicon. Ngaphezulu kwamakhono ayo afudumele, kuyinto eqinile kakhulu futhi ayiphenduli ngama-acid, ama-alkali noma usawoti oncibilikisiwe emazingeni okushisa afinyelela ku-800 ° C. Lokhu kunikeza lezi zinto eziguquguqukayo ze-substrates kuzicelo zazo futhi zisiza futhi zisiza ikhono lazo lokukhipha i-silicon bulk kuzinhlelo eziningi. Amandla awo asemazingeni okushisa aphezulu nawo ayakuvumela ukuthi asebenze ngokuphepha emazingeni okushisa angaphezu kuka-1600 ° C. Lokhu kwenza kube yinto efanelekile yokungafanele nganoma yisiphi isicelo sokushisa esiphakeme.