I-RBSiC/SiSiC Reaction Bonded Silicon Carbide

UKUBUKA KWE-REACTION BONDED SILICON CARBIDE
I-Reaction bonded silicon carbide, ngezinye izikhathi ebizwa ngokuthi i-siliconized silicon carbide.

Ukungena kunikeza okokusebenza inhlanganisela eyingqayizivele yezakhiwo zemishini, ezishisayo, nezikagesi ezingavunyelaniswa nohlelo lokusebenza.

I-Silicon Carbide iphakathi kwezinto zobumba ezinzima kakhulu, futhi igcina ubulukhuni namandla emazingeni okushisa aphakeme, okuhunyushwa kube phakathi kokumelana okuhle kakhulu kokugqoka futhi. Ukwengeza, i-SiC ine-conductivity ephezulu ye-thermal, ikakhulukazi ebangeni le-CVD (i-chemical vapor deposition), elisiza ekumelaneni nokushisa okushisayo. Ibuye ibe yingxenye yesisindo sensimbi.

Ngokusekelwe kule nhlanganisela yobulukhuni, ukumelana nokugqoka, ukushisa nokugqwala, i-SiC ivame ukucaciswa ubuso be-seal kanye nezingxenye zepompo yokusebenza okuphezulu.

I-Reaction Bonded SiC inendlela yokukhiqiza ebiza kancane enohlamvu lwesifundo. Inikeza ubulukhuni obuphansi kanye nezinga lokushisa lokusebenzisa, kodwa ukuguquguquka kwe-thermal ephakeme.

I-Direct Sintered SiC iyibanga elingcono kune-Reaction Bonded futhi ivamise ukucaciswa umsebenzi wokushisa okuphezulu.