I-Silicon carbide ne-silicon nitride inokumanzisa okungekuhle ngensimbi encibilikisiwe. Ngaphandle kokungenwa yi-magnesium, nickel, chromium alloy nensimbi engagqwali, awanakho ukumanzisa kwezinye izinsimbi, ngakho anokumelana nokugqwala okuhle kakhulu futhi asetshenziswa kabanzi embonini ye-aluminium electrolysis.
Kuleli phepha, ukumelana nokugqwala kwe-silicon carbide enziwe kabusha i-R-SiC kanye ne-silicon nitride eboshelwe i-silicon carbide i-Si3N4-SiC ekuncibilikeni okujikelezayo kwe-Al-Si ingxubevange yaphenywa kusukela kuma-latitudes amaningi.
Ngokusho kwedatha yokuhlola izikhathi ezingu-9 zokuhamba ngebhayisikili ezishisayo ka-1080h ku-495 ° C ~ 620 ° C i-aluminium-silicon alloy alloy melt, imiphumela yokuhlaziya elandelayo yatholakala.
Amasampula e-R-SiC kanye ne-Si3N4-SiC anda ngesikhathi sokugqwala futhi izinga lokugqwala lehla. Izinga lokugqwala elihambisana nobudlelwano be-logarithmic bokunciphisa. (umfanekiso 1)
Ngokuhlaziywa kwe-spectrum yamandla, amasampula e-R-SiC kanye ne-Si3N4-SiC ngokwawo awanayo i-aluminium-silicon; kuphethini ye-XRD, inani elithile le-aluminium-silicon peak ingxubevange ye-aluminium-silicon engaphezulu. (Umfanekiso 2 – Umfanekiso 5)
Ngokuhlaziywa kwe-SEM, njengoba isikhathi sokugqwala sikhula, ukwakheka okuphelele kwamasampula e-R-SiC kanye ne-Si3N4-SiC akhululekile, kodwa akukho monakalo osobala. (Umfanekiso 6 – Umfanekiso 7)
Ukungezwani kwendawo engu-σs/l>σs/g yesixhumi esibonakalayo phakathi koketshezi lwe-aluminium kanye ne-ceramic, i-engeli yokumanzisa θ phakathi kwezindawo zokuhlangana ingu>90°, futhi isixhumi esibonakalayo phakathi koketshezi lwe-aluminium nento ye-ceramic yeshidi ayimanzi.
Ngakho-ke, izinto ze-R-SiC ne-Si3N4-SiC zinhle kakhulu ekuphikiseni ukugqwala ngokumelene ne-aluminium silicon iyancibilika futhi inomehluko omncane. Nokho, izindleko zezinto ze-Si3N4-SiC ziphansi futhi sezisetshenziswe ngempumelelo iminyaka eminingi.
Isikhathi sokuthumela: Dec-17-2018