Mayelana ne-Silicon Carbide ne-SiC ceramics

I-Silicon Carbide inokumelana okuhle kakhulu nokugqwala, amandla aphezulu emishini, amandla aphezulu ashisayo, i-coefficient ephansi kakhulu yokwanda okushisayo, kanye nokumelana nokushaqeka okungcono kokushisa kunamazinga okushisa aphakeme kakhulu e-aluminum. I-Silicon carbide yakhiwe nge-tetrahedra ye-carbon nama-athomu e-silicon anezibopho eziqinile ku-crystal lattice. Lokhu kukhiqiza impahla eqinile futhi eqinile. I-silicon carbide ayihlaselwa yinoma yimaphi ama-acids noma ama-alkali noma usawoti oncibilikisiwe ofika ku-800ºC. Emoyeni, i-SiC yenza isivikelo se-silicon oxide enamathela ku-1200ºC futhi iyakwazi ukusetshenziswa kufika ku-1600ºC. I-thermal conductivity ephezulu ehambisana nokunwebeka okuphansi kwe-thermal namandla aphezulu kunikeza lesi sici izimfanelo ezihlukile zokumelana nokushaqeka okushisayo. Izitsha zobumba ze-silicon carbide ezinokungcola okuncane noma okungenakho komngcele wokusanhlamvu zigcina amandla azo emazingeni okushisa aphezulu kakhulu, asondela ku-1600ºC ngaphandle kokulahlekelwa amandla. Ukuhlanzeka kwamakhemikhali, ukumelana nokuhlaselwa kwamakhemikhali ezingeni lokushisa, nokugcina amandla emazingeni okushisa aphezulu kwenze le nto yaziwa kakhulu njengezisekelo zethreyi le-wafer kanye namapaddles ezithandweni ze-semiconductor. I-Thcell nameelectrical conduction of the material iholele ekusetshenzisweni kwayo ezintweni zokushisa eziphikisanayo zezithando zikagesi, futhi njengengxenye eyinhloko kuma-thermistors (i-temperature variable resistors) kanye nama-varistors (i-voltage variable resistors). Ezinye izinhlelo zokusebenza zihlanganisa ubuso be-seal, amapuleti okugqoka, ama-bearings namashubhu e-liner.