Mayelana ne-Silicon Carbide ne-Ceramics Sic

I-Silicon Carbide inokumelana kahle nokugqwala, amandla aphezulu emishini, ukuqhutshwa okuphezulu okuphezulu, i-coefficied ephansi kakhulu yokulwa nokuphikiswa okushisayo okungcono kakhulu kunokushisa okuphezulu kakhulu. I-Silicon Carbide yakhiwa i-tetrahedra yekhabhoni nama-athomu e-silicon ngamabhondi aqinile ku-crystal lattice. Lokhu kukhiqiza impahla enzima futhi eqinile. I-Silicon Carbide ayihlaselwa yimaphi ama-acid noma ama-alkali noma usawoti oncibilikisiwe kuze kube ngu-800ºC. Emoyeni, i-sic yakha umhlanganisi we-silicon oxide ovikelayo ku-1200ºC futhi uyakwazi ukusetshenziswa kuze kube ngu-1600ºC. Ukuphambuka okuphezulu okushisayo okuhambisana nokunwetshwa okuphansi okushisayo kanye namandla aphezulu kunika lokhu okushiwo okuhlukile kokungamelana nokushayeka okushaqekile. I-Alicon Carbide Couramic ngokungcola okuncane noma okusanhlamvu okusanhlamvu kugcina amandla awo kumazinga okushisa aphezulu, asondela ku-1600ºC ngaphandle kokulahlekelwa amandla. Ukuhlanzeka kwamakhemikhali, ukumelana nokuhlaselwa kwamakhemikhali emazingeni okushisa, futhi ukugcinwa kwamandla kumazinga okushisa aphezulu kwenze lokhu kuthandwe kakhulu njengoba i-wafer tray isekela kanye nama-padonductor empahleni. I-THCELL Namelectrical ukufakwa kwezinto ezibonakalayo kuholele ekusetshenzisweni kwayo ekuvikeleni kwezinto zokushisa kwezinto ezifudumele kagesi, futhi njengengxenye ebalulekile kuma-thermitors (amazinga okushisa ahlukahlukene) nasezinhlelweni eziguquguqukayo). Ezinye izinhlelo zifaka ubuso bobuso, gqoka amapuleti, ama-bearings kanye namashubhu we-liner.

 1`uku -uavkbectjd @ VC} DG2P @ T  


Isikhathi sePosi: Jun-05-2018
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