- UBUHLE BOKUSENZA IBONDED I-SILICON CARBIDE
Imikhiqizo ye-Reaction Bonded Silicon Carbide (RBSC, noma i-SiSiC) inikezela ngokuqina okwedlulele/ukumelana nemihuzuko kanye nokuzinza kwamakhemikhali okuvelele ezindaweni ezinolaka. I-Silicon Carbide iyimpahla yokwenziwa ekhombisa izici zokusebenza okuphezulu okubandakanya:
lUkumelana kwamakhemikhali okuhle kakhulu.
Amandla e-RBSC acishe abe ngama-50% amakhulu kunalawo ama-silicon carbides amaningi ahlanganiswe ne-nitride. I-RBSC iwukumelana nokugqwala okuhle kakhulu kanye ne-antioxidation ceramic. Ingakhiwa ibe izinhlobonhlobo ze-desulpurization nozzle (FGD) .
lUkuguga okuhle kakhulu nomthelela ukumelana.
Iphezulu kakhulu yobuchwepheshe be-ceramic obungazweli ngezinga elikhulu. I-RBSiC inobunzima obuphakeme obusondela kulokho kwedayimane. Idizayinelwe ukusetshenziswa ezinhlelweni zomumo abakhulu lapho amamaki aphikisayo e-silicon carbide ebonisa ukuguga okulimazayo noma ukulimala okuvela kumthelela wezinhlayiya ezinkulu. Imelana nokungena okuqondile kwezinhlayiya zokukhanya kanye nomthelela kanye nokuhushulwa okuqinile okuqinile okuqukethe ama-slurries. Ingakhiwa ibe yizinhlobonhlobo zomumo, okuhlanganisa ukubunjwa kwekhoni kanye nemikhono, kanye nezingcezu zobunjiniyela eziyinkimbinkimbi ezidizayinelwe okokusebenza okubandakanyekayo ekucutshungulweni kwezinto ezingavuthiwe.
lUkumelana nokushaqeka okuhle kakhulu kwe-thermal.
Izingxenye ze-silicon carbide eziboshiwe zinikeza ukumelana nokushaqeka okushisayo kodwa ngokungafani nezitsha zobumba zendabuko, ziphinde zihlanganise ukuminyana okuphansi namandla aphezulu emishini.
lAmandla aphezulu (ithola amandla ekushiseni).
I-Reaction bonded I-Silicon carbide igcina amandla ayo amaningi emishini emazingeni okushisa aphakeme futhi ibonisa amazinga aphansi kakhulu okukhasa, okuyenza ibe ukukhetha kokuqala kwezinhlelo zokusebenza ezithwala umthwalo ebangeni elingu-1300ºC kuya ku-1650ºC (2400ºC kuya ku-3000ºF).
- Ishidi ledatha yezobuchwepheshe
| I-datasheet yobuchwepheshe | Iyunithi | I-SiSiC (RBSiC) | I-NbSiC | I-ReSiC | I-Sintered SiC |
| I-Reaction Bonded Silicon Carbide | I-Nitride Bonded Silicon Carbide | I-Recrystallized Silicon Carbide | I-Sintered Silicon Carbide | ||
| Ukuminyana ngobuningi | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2.75 | 2.8 |
| I-SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| I-Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Vula i-Porosity | (%) | <0.5 | 10~12 | 15-18 | 7-8 |
| Amandla okugoba | Mpa / 20℃ | 250 | 160-180 | 80-100 | 500 |
| I-Mpa / 1200 ℃ | 280 | 170-180 | 90-110 | 550 | |
| I-modulus ye-elasticity | I-Gpa / 20 ℃ | 330 | 580 | 300 | 200 |
| I-Gpa / 1200 ℃ | 300 | ~ | ~ | ~ | |
| I-Thermal conductivity | W/(m*k) | 45 (1200℃) | 19.6 (1200℃) | 36.6 (1200℃) | 13.5~14.5 (1000℃) |
| Ukwanela kokunwetshwa kwe-thermal | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Isikali sokuqina sikaMons (Rigidity) | 9.5 | ~ | ~ | ~ | |
| Izinga lokushisa eliphakeme kakhulu | ℃ | 1380 | 1450 | 1620 (i-oksidi) | 1300 |
- Icala LemboniMayelana ne-Reaction Bonded Silicon Carbide:
Ukukhiqiza Amandla, Izimayini, Amakhemikhali, I-Petrochemical, I-Kiln, Imboni yokukhiqiza Imishini, Amaminerali & Metallurgy nokunye.
Kodwa-ke, ngokungafani nezinsimbi nama-alloys azo, azikho izindlela ezijwayelekile zokusebenza kwemboni ye-silicon carbide. Ngezinhlobonhlobo zezingoma, ukuminyana, amasu okukhiqiza kanye nesipiliyoni senkampani, izingxenye ze-silicon carbide zingahluka kakhulu ngokuvumelana, kanye nezakhiwo zemishini namakhemikhali. Ukukhetha kwakho umphakeli kunquma izinga nekhwalithi yezinto ozitholayo.