I-SIC ye-SIC ye-CVD yefilimu

I-Vapor Vapor Vapor

I-vidiction ye-Vapor Vapor (CVD) i-oxide yinkqubo yokukhula komgca apho irhasi yerhasi yerhasi yerhasi kwifilimu ecekeceke kwi-wafer. Inkqubo yokukhula iqondo lobushushu eliphantsi kwaye lineqondo eliphezulu lokukhula xa kuthelekiswa naloi-thermal oxide. Ikwavelisa i-searicline ye-selicon dioxide kuba ifilimu ifakwe, kunokuba ikhule. Le nkqubo ivelisa ifilimu enokunganyangeki okuphezulu kombane, okukhulu ngokuyisebenzisa kwi-ICS nakwiizixhobo ze-MAM, phakathi kwezinye iinkqubo ezininzi.

I-Vapor Vapor Vapor Placial (cvd) i-oxide ifakwe xa ungqimba lwangaphandle olufunekayo kodwa i-silicon Crabrest ayinakuba nakho ukubekwa kwi-oxidod.

I-Vapor Vapor Report Repotion Report:

Ukukhula kwe-CVD kwenzeka xa irhasi okanye i-vapor (i-precursor) yaziswa kwiqondo lokushisa eliphantsi apho i-wafer ilungiselelwe khona i-wafer icwangciswe ngokuthe nkqo okanye ngokuthe tye. Igesi ihamba ngenkqubo kwaye isasaze ngokulinganayo kumphezulu we-wafer. Njengoko aba bangendi bahamba nge-reactor, ii-wafirs ziqala ukuzibandakanya kumphezulu wazo.

Nje ukuba abathi bangaphambili basasaze ngokuhlwa kuyo yonke le nkqubo, ukuphendula kweekhemikhali kuqala kumphezulu wezithintelo. Oku kuphendula kwekhemikhali ukuqala njengeZiqithi, kwaye njengoko le nkqubo iyaqhubeka, iziqithi zikhula kwaye zidibanise ukudala ifilimu efunekayo. Ukuphendula kweekhemikhali Yenza i-Biplesmes kumphezulu we-wafer, ohlukaniswe ngumda womda kunye nokuhamba komda wokuhamba, ushiya nje i-wafres ngepilisi yefilimu.

Umzobo 1

Izibonelelo zokubekwa kwe-vapor vapor yekhemikhali:

• Inkqubo yokukhula kweqondo lobushushu eliphantsi.
• Ixabiso lokufundela ngokukhawuleza (ngakumbi i-APCVD).
• Ayifanelanga ukuba ibe yindawo ye-silicon.
• Inyathelo lenyathelo elifanelekileyo (ngakumbi i-PECVD).

Umzobo 2
I-Silicon Dioxide i-vs. Ukukhula

Ngolwazi oluthe kratya malunga ne-vapor vapor yekhemikhali okanye ukucela ikopi, ncedaNxibelelana ne-svmNamhlanje ukuthetha nelungu leqela lethu lentengiso.

Iindidi ze-CVD

Lpcvd

I-Vaporical Cacial Placial Vapor i-Vapor i-Vapor yenkqubo yokufundwa kweekhemikhali ngaphandle kokucinezelwa. Umahluko omkhulu phakathi kwe-LPCVD kunye nezinye iindlela ze-CVD iqondo lokushisa. I-LPCVD isebenzisa amaqondo obushushu aphezulu okufaka iifilimu, ngokuqhelekileyo ngaphezulu kwe-600 ° C.

Imeko yoxinzelelo esezantsi idala ifilimu efanayo ngokucocekileyo, ukuzala kwakhona, kunye ne-homogeneity. Oku kwenziwa phakathi kwe-10-1 000 ye-PA, ngelixa igumbi eliphantsi loxinzelelo yi-101,325 Pa.

• Iifilimu eziqhelekileyo ezibekiweyo:Polysilicicon.nitrides.

I-Pecvd

IPlasma eyaphulileyo yePlasmo ixhaswe i-Vapor yePhekhemikhali yiqondo lobushushu eliphantsi, indlela ephezulu yefilimu yefilimu. I-PECVD yenzeka kwi-CVD Reactor ekongezwa kweplasma, eyirhasi engqonge irhasi enkulu yasimahla ye-Electroni (~ 50%). Le yinkqubo yeqondo lokushiswa kweqondo lobushushu elisenzeka phakathi kwe-100 ° C-400 ° C. I-PECVD inokwenziwa kumaqondo obushushu asezantsi ngenxa yokuba amandla avela kwi-eletroni yasimahla azikwazi ukucanda iigesi ezisebenzayo ukwenza ifilimu kumphezulu wesandla.

Le ndlela yokufundwa isebenzisa iintlobo ezimbini ezahlukeneyo zeplasma:

1. Ukubanda (ukungasebenzi): Ii-elektroniki zinamaqondo obushushu aphezulu kunamasuntswana nee-ion. Le ndlela isebenzisa amandla ee-elektroni ngokutshintsha koxinzelelo kwigumbi lokufundela.
2. I-thermal: I-elektroniki liqondo lobushushu olufanayo njengamasuntswana nee-ion kwigumbi lokufundela.

Ngaphakathi kwigumbi lokufundela, i-radio-voltancy flowtage ithunyelwe phakathi kwe-electrode ngaphezulu nangaphantsi kwe-wafer. Oku kuhlawulisa i-elektroni kwaye uzigcine kwimo ethandekayo ukuze ifake ifilimu efunekayo.

Kukho amanyathelo amane okukhulisa iifilimu nge-pecvd:

1. Beka ithagethi ye-elektrodrode ngaphakathi kwegumbi lokufundela.
2. Yazisa igesi esebenzayo kunye nezinto zokufaka kwigumbi eliya kwigumbi.
3. Thumela i-plasma phakathi kwe-electrode kwaye usebenzise i-voltage ukonwabisa iPlasma.
4. Ukusebenza kwegesi

• Iifilimu eziqhelekileyo ezisetyenzisiweyo: I-Silicon Oxis, Silicon Nitride, Amorphouslicon,I-Silicon Osynrider (Si_xO_yN_z).

Apcvd

I-Atmospheric Acmosfici Chemical Placial Placial Plassali yokufaka amaqondo aphantsi kweqondo eliphantsi elenzeka kwisiko kwingcinezelo yemozulu esemgangathweni. Njengayenye iindlela ze-CVD, i-APCVD ifuna igesi yangaphambili ngaphakathi kwegumbi lokufundela, emva koko iqondo lobushushu linyuka ngokuthe ngcembe ukuba lithathe inxaxheba kumhlaba we-waffese kwaye ifake ifilimu enamanzi. Ngenxa yokulula kwendlela, ineqondo lemigangatho ephezulu kakhulu.

• Iifilimu eziqhelekileyo ezisetyenzisiweyo: I-on of kunye ne-selicon oxicle i-oxis, i-silicon nitrides. Isetyenziswe ngaphakathiukungqungqa.

I-HDP CVD

I-Plastity Plates yePhephailical Vaporation yi-PECVD esebenzisa i-PLASMA ePhezulu, evumela i-wifers ukuba iphendule ngeqondo eliphantsi (phakathi kwe-80 ° C) kwigumbi lokufundela. Oku kukwadala ifilimu ene-trench enkulu igcwalise amandla.

• Iifilimu eziqhelekileyo ezisetyenzisiweyo: I-Silicon Dioxide (Sio₂), Silicon Nitride (Si₃N₄),I-Silicon Carbide (i-SIC).

I-sacvd

I-Camical Placial Plascal Vapor Idipozithi yahlukile kwezinye iindlela kuba kuqhubeka phantsi koxinzelelo lwegumbi lomgangatho kwaye isebenzise i-ozone (o₃) Ukunceda ukuqalisa impendulo. Inkqubo yokufihlaka yenzeka kuxinzelelo oluphezulu kune-LPCVD kodwa iphantsi kune-APCVD, phakathi kwe-13,300 ye-PA kunye ne-80 ° phucula amaqondo eqondo lokufaka i-490 ° C, apho iqala khona ukuncipha.

• Iifilimu eziqhelekileyo ezibekiweyo:I-BPSG, PSG,I-teos.

I-Shandong Zhongpeng Zhongpeng ye-ceramics conramics co., i-LTD yenye yesona sesona silwanyana sase-Carbic seeramic se-ceramic eTshayina. I-ceramic yezobuchwephesha: Ubunzima bukaMoh buyi-9 (ubunzima bukaMoses oneminyaka eyi-13), ngokuchasene nehlelo eligqwesileyo ekukhukuliseni nasekuchazeni, ukuchasana nokuchasana nokuchasana nokuchasa. Inkonzo yenkonzo ye-SIC i-4 ukuya kwi-5 ixesha elingaphezulu kwe-92% yealumina. I-Morb ye-RBIC i-5 ukuya kwezi-7 amaxesha e-SNBSC, inokusetyenziselwa imilo enzima kakhulu. Inkqubo yekowuteshini iyakhawuleza, ukuhanjiswa njengoko kuthenjisiwe njengoko kuthenjisiwe kwaye umgangatho owesibini kungekho. Sihlala siqhubeka nokucela umngeni kwiinjongo zethu kwaye sibubuyise iintliziyo zethu eluntwini.