I-substrate ye-SiC ye-CVD yokugquma ifilimu

Ukubekwa kweMichiza yoMphunga

I-Chemical vapor deposition (CVD) oxide yinkqubo yokukhula ngokulandelelana apho irhasi yangaphambili ifaka ifilimu ebhityileyo kwi-wafer kwireactor. Inkqubo yokukhula iqondo lobushushu eliphantsi kwaye inezinga eliphezulu lokukhula xa lithelekiswai-thermal oxide. Ikwavelisa umaleko obhityileyo kakhulu wesilicon dioxide ngenxa yokuba ifilimu isusiwe, endaweni yokuba ikhule. Le nkqubo ivelisa ifilimu enokumelana nombane ophezulu, okulungele ukusetyenziswa kwii-ICs kunye nezixhobo ze-MEMS, phakathi kwezinye izicelo ezininzi.

I-Chemical vapor deposition (CVD) oxide yenziwa xa kufuneka umaleko wangaphandle kodwa i-silicon substrate ayinakukwazi ukufakwa i-oxidized.

Ukukhula koMchiza woMphunga:

Ukukhula kwe-CVD kwenzeka xa irhasi okanye umphunga (i-precursor) ungeniswa kwireactor yobushushu obuphantsi apho ii-wafers zicwangciswa ngokuthe nkqo okanye ngokuthe tye. Irhasi ihamba ngesixokelelwano kwaye isasazeke ngokulinganayo kuwo wonke umphezulu wee-wafers. Njengoko ezi zandulela zihamba kwi-reactor, ii-wafers ziqala ukuzifunxa kumphezulu wazo.

Nje ukuba ii-precursors zisasazwe ngokulinganayo kuyo yonke inkqubo, ukusabela kweekhemikhali kuqala kumphezulu we-substrates. Ezi ntshukumo zemichiza ziqala njengeziqithi, kwaye njengoko inkqubo iqhubeka, iziqithi ziyakhula kwaye zihlangane ukuze zenze ifilimu efunwayo. Ukuchaphazeleka kweekhemikhali kudala i-biproducts kumphezulu we-wafers, ezithi zisasazeke ngaphaya komda womaleko kwaye ziphume kwi-reactor, zishiya nje ii-wafers ezinefilim yazo ediphozithiweyo.

Umfanekiso woku-1

Izibonelelo zokuBekwa koMphunga weMichiza:

• Inkqubo yokukhula kobushushu obuphantsi.
• Isantya sokubeka ngokukhawuleza (ingakumbi i-APCVD).
• Akufuneki ukuba ibe yi-silicon substrate.
• Inyathelo elihle lokugubungela (ingakumbi i-PECVD).

Umfanekiso wesi-2
Ukubekwa kwesilicon diokside vs. ukukhula

Ngolwazi oluthe vetshe malunga nokubekwa komphunga wekhemikhali okanye ukucela isicatshulwa, ncedaQHAGAMSHELANA ne-SVMnamhlanje ukuthetha nelungu leqela lethu lokuthengisa.

Iintlobo zeCVD

I-LPCVD

Uxinzelelo oluphantsi lwekhemikhali yokubeka umphunga yinkqubo yokubeka umphunga wekhemikhali ngaphandle koxinzelelo. Umahluko omkhulu phakathi kwe-LPCVD kunye nezinye iindlela ze-CVD bubushushu bokubekwa. I-LPCVD isebenzisa elona qondo lobushushu liphezulu ukufaka iifilimu, ubukhulu becala ngaphezulu kwe-600°C.

Indawo ephantsi yoxinzelelo idala ifilimu efanayo kakhulu enobunyulu obuphezulu, ukuveliswa kwakhona, kunye ne-homogeneity. Oku kwenziwa phakathi kwe-10 - 1,000 Pa, ngelixa uxinzelelo lwegumbi oluqhelekileyo luyi-101,325 Pa. Ubushushu bunquma ubukhulu kunye nokucoceka kwezi filimu, kunye nokushisa okuphezulu okubangelwa iifilimu ezinobunzima kunye nezicocekileyo.

• Iifilimu eziqhelekileyo ezifakiweyo:polysilicon, i-oksidi edibeneyo kunye ne-unndoped,iinitrides.

I-PECVD

I-Plasma eyomeleziweyo yokubeka umphunga wekhemikhali bubushushu obuphantsi, ubuchule bokubekwa koxinaniso lwefilimu. I-PECVD yenzeka kwi-reactor ye-CVD kunye nokongezwa kwe-plasma, eyigesi ye-ionized inxalenye enomxholo ophezulu we-electron wamahhala (~ 50%). Le yindlela yokubeka ubushushu obuphantsi eyenzeka phakathi kwe-100°C – 400°C. I-PECVD inokwenziwa kumaqondo obushushu aphantsi kuba amandla asuka kwii-electron zasimahla ahlukanisa iigesi ezisebenzayo ukuze zenze ifilimu kumphezulu we-wafer.

Le ndlela yokubeka isebenzisa iindidi ezimbini ezahlukeneyo zeplasma:

1. Kubanda (okungeyona i-thermal): ii-electron zinobushushu obuphezulu kunamasuntswana angathathi hlangothi kunye ne-ion. Le ndlela isebenzisa amandla eelektroni ngokuguqula uxinzelelo kwindawo yokubeka.
2. I-Thermal: ii-electron zibubushushu obufanayo kunye namasuntswana kunye neeonini kwigumbi lokubeka.

Ngaphakathi kwegumbi lokubeka, i-voltage yerediyo-frequency ithunyelwa phakathi kwe-electrode ngaphezulu nangaphantsi kwe-wafer. Oku kuhlawulisa ii-electron kwaye uzigcine zikwimeko evuyisayo ukuze kufakwe ifilimu efunwayo.

Kukho amanyathelo amane okukhulisa iifilimu nge-PECVD:

1. Beka i-wafer ekujoliswe kuyo kwi-electrode ngaphakathi kwegumbi lokubeka.
2. Yazisa iigesi ezisebenzayo kunye nezinto zokubeka kwigumbi.
3. Thumela iplasma phakathi kwee-electrode kwaye usebenzise i-voltage ukuze uvuyise iplasma.
4. Irhasi esebenzayo iyahlukana kwaye isabelane nomphezulu wewafer ukwenza ifilim ebhityileyo, iimveliso eziphuma ngaphandle ziphuma ngaphandle kwegumbi.

• Iifilimu eziqhelekileyo ezifakwe: i-silicon oxides, i-silicon nitride, i-amorphous silicon,i-silicon oxynitrides (Si_xO_yN_z).

APCVD

Uxinzelelo lwe-atmospheric, ikhemikhali yokubeka umphunga yindlela yokubekwa kweqondo lobushushu obuphantsi olwenzeka eziko kuxinzelelo oluqhelekileyo lomoya. Njengezinye iindlela ze-CVD, i-APCVD idinga igesi engaphambili ngaphakathi kwegumbi lokubeka, emva koko iqondo lobushushu liyenyuka ngokucothayo ukuze libangele ukusabela kwi-wafer surface kwaye ifake ifilimu encinci. Ngenxa yokulula kwale ndlela, inezinga eliphezulu lokubeka.

• Iifilimu eziqhelekileyo ezigciniweyo: i-silicon oxides ene-doped kunye ne-undoped, i-silicon nitrides. Ikwasetyenziswa kwiukuhlamba.

HDP CVD

I-high density plasma chemical deposition vapor deposition yinguqulelo ye-PECVD esebenzisa i-plasma yoxinaniso oluphezulu, oluvumela ii-wafers ukuba ziphendule kunye nobushushu obuphantsi (phakathi kwe-80 ° C-150 ° C) ngaphakathi kwegumbi lokubeka. Oku kudala ifilimu enezakhono zokuzalisa umsele omkhulu.

• Iifilimu eziqhelekileyo ezifakwe: isilicon dioxide (SiO₂), i-silicon nitride (Si₃N₄),i-silicon carbide (SiC).

I-SACVD

Uxinzelelo lwekhemikhali yoxinzelelo lwe-Suatmospheric yokubekwa komphunga kwahlukile kwezinye iindlela kuba kwenzeka ngaphantsi koxinzelelo oluqhelekileyo lwegumbi kwaye isebenzisa i-ozone (O₃) ukunceda ukuvuselela ukusabela. Inkqubo yokubeka iyenzeka kuxinzelelo oluphezulu kune-LPCVD kodwa iphantsi kune-APCVD, phakathi kwe-13,300 Pa kunye ne-80,000 Pa. Iifilimu ze-SACVD zinezinga eliphezulu lokubeka kwaye liphucula njengoko ubushushu bunyuka kude kube malunga ne-490 ° C, apho iqala ukuhla. .

• Iifilimu eziqhelekileyo ezifakiweyo:BPSGPSG,I-TEOS.

I-Shandong Zhongpeng Special Ceramics Co., Ltd yenye yezona zisombululo zikhulu ze-silicon carbide zeceramic ze-ceramic e-China. I-ceramic yobugcisa be-SiC: Ubulukhuni be-Moh yi-9 (ubulukhuni be-Moh entsha yi-13), kunye nokuchasana okugqwesileyo kukhukuliseko kunye nokugqwala, i-abrasion egqwesileyo - ukuxhathisa kunye ne-anti-oxidation. Ubomi benkonzo yemveliso ye-SiC yi-4 ukuya kwamaxesha ama-5 ubude ngaphezu kwe-92% yezinto ze-alumina. I-MOR ye-RBSiC yi-5 kumaxesha e-7 ye-SNBSC, ingasetyenziselwa imilo enzima ngakumbi. Inkqubo yekoteyishini ikhawuleza, ukuhanjiswa kuthenjisiwe kwaye umgangatho ungowesibini. Sihlala sizingisa ukucela umngeni kwiinjongo zethu kwaye sibuyisele iintliziyo zethu kuluntu.