Isigama esiqhelene neSilicon Carbide Processing

I-Recrystallized Silicon Carbide (RXSIC, ReSIC, RSIC, R-SIC). Into yokuqala ekrwada yi-silicon carbide. Akukho zincedisi zoxinaniso zisetyenziswayo. Izinto eziluhlaza zifudunyezwa ukuya kutsho kuma-2200ºC ukuze zimanyaniswe okokugqibela. Izinto ezibangelwayo zi malunga ne-25% ye-porosity, ekhawulela iimpawu zayo zemishini; nangona kunjalo, izinto eziphathekayo zinokucoceka kakhulu. Inkqubo inoqoqosho kakhulu.
I-Reaction Bonded Silicon Carbide (RBSIC). Izinto zokuqala ekrwada yisilicon carbide kunye nekhabhoni. Icandelo eliluhlaza lifakwe ngesilicon etyhidiweyo ngaphezulu kwe-1450ºC ngokusabela: SiC + C + Si -> SiC. I-microstructure ngokubanzi inomlinganiselo othile we-silicon engaphezulu, ethintela iimpawu zayo zokushisa okuphezulu kunye nokuxhathisa ukubola. Utshintsho oluncinci lwenzeka ngexesha lenkqubo; nangona kunjalo, umaleko wesilicon uhlala ekhona kumphezulu wenxalenye yokugqibela. I-ZPC RBSiC yamkelwe itekhnoloji ephucukileyo, ivelisa ukunxitywa kombane, iipleyiti, iithayile, umgca wenkanyamba, iibhloko, iinxalenye ezingaqhelekanga, kunye nokunxiba kunye nokumelana nokubola kwemilomo yeFGD, isitshintshi sobushushu, imibhobho, iityhubhu, njalo njalo.

I-Nitride Bonded Silicon Carbide (NBSIC, NSIC). Izinto zokuqala ekrwada yisilicon carbide kunye nesilicon powder. I-compact eluhlaza ikhutshwe emoyeni we-nitrogen apho i-reaction ye-SiC + 3Si + 2N2 -> i-SiC + Si3N4 iyenzeka. Isixhobo sokugqibela sibonisa utshintsho oluncinci lwe-dimensional ngexesha lokucubungula. Izinto eziphathekayo zibonisa inqanaba elithile le-porosity (ngokuqhelekileyo malunga ne-20%).

Ngqo Sintered Silicon Carbide (SSIC). I-silicon carbide yinto yokuqala ekrwada. Uncedo loxinaniso yiboron kunye nekhabhoni, kwaye uxinaniso lwenzeka ngenkqubo yokusabela kobume obuqinileyo ngaphezulu kwe-2200ºC. Iimpawu zayo zokushisa okuphezulu kunye nokumelana nokubola ziphezulu ngenxa yokungabikho kwesigaba sesibini seglasi kwimida yengqolowa.

Isigaba solwelo Sintered Silicon Carbide (LSSIC). I-silicon carbide yinto yokuqala ekrwada. Uncedo loxinaniso yiyttrium oxide kunye ne-aluminiyam oxide. Uxinaniso lwenzeka ngaphezu kwe-2100ºC ngokusabela kwesigaba solwelo kwaye kukhokelela kwisigaba sesibini seglasi. Iipropathi zoomatshini ngokuqhelekileyo ziphezulu kune-SSIC, kodwa iipropati zobushushu obuphezulu kunye nokumelana nokubola akulunganga.

I-Silicon Carbide ecinezelweyo eshushu (HPSIC). I-silicon carbide powder isetyenziswa njengento yokuqala ekrwada. Uncedo loxinaniso ludla ngokuba yiboron kunye nekhabhoni okanye iyttrium oxide kunye nealuminiyam oxide. Uxinaniso lwenzeka ngokusetyenziswa ngaxeshanye koxinzelelo lomatshini kunye nobushushu ngaphakathi kumngxuma wokufa wegraphite. Iimilo ziipleyiti ezilula. Izixa eziphantsi zoncedo lwe-sintering zingasetyenziswa. Iimpawu zobuchwephesha bezinto ezicinezelweyo ezishushu zisetyenziswa njengesiseko apho ezinye iinkqubo zithelekiswa. Iimpawu zombane zingatshintshwa ngotshintsho kwii-aids zoxinaniso.

I-CVD Silicon Carbide (CVDSIC). Esi sixhobo senziwe yinkqubo yokubeka umphunga wekhemikhali (CVD) ebandakanya ukusabela: CH3SiCl3 -> SiC + 3HCl. Ukusabela kuqhutyelwa phantsi kwe-atmosphere ye-H2 kunye ne-SiC ifakwe kwi-graphite substrate. Inkqubo iphumela kwizinto ezicocekileyo kakhulu; nangona kunjalo, kuphela iipleyiti ezilula ezinokwenziwa. Inkqubo ibiza kakhulu ngenxa yokucotha kwamaxesha okusabela.

I-Chemical Vapor Composite Silicon Carbide (CVCSiC). Le nkqubo iqala nge-precursor yegraphite yobunikazi eyenziwe ngomatshini kwiimilo ezikufutshane nenethi kwimeko yegraphite. Inkqubo yokuguqulwa ibeka inxenye yegraphite kwi-situ vapor solid-state reaction ukuvelisa i-polycrystalline, i-stoichiometrically eyi-SiC echanekileyo. Le nkqubo ilawulwa ngokuqinileyo ivumela uyilo oluntsonkothileyo luveliswe kwinxalenye yeSiC eguqulwe ngokupheleleyo eneempawu zokunyamezelana eziqinileyo kunye nobunyulu obuphezulu. Inkqubo yokuguqula inciphisa ixesha eliqhelekileyo lokuvelisa kwaye inciphise iindleko kunezinye iindlela.* Umthombo (ngaphandle kwalapho kuphawulwe khona): Ceradyne Inc., Costa Mesa, Calif.