I-Redrytricked slicdor carbide (i-Rxsic, i-Rxsic, i-resic, iRic, iR-SIC). Izinto eziqala eziqala yi-silicon carbide. Akukho Aids zoncedo ziyasetyenziswa. I-Compames eluhlaza ishushu kakhulu kwi-2200ºC yeColionation yokugqibela. Isiphumo esibangesiphumo sine-25% ukuthambeka, nto leyo iphantsi komhlaba; Nangona kunjalo, izinto ezibonakalayo zinokuba nyulu kakhulu. Inkqubo inoqoqosho olukhulu kakhulu.
Ukuphendula i-bodd ye-bold ye-selicn carbide (i-rbsic). Izinto eziqala zizinto eziqala yi-Silicon carbide plusbon. Icandelo eliluhlaza lingene nge-molten silicon engaphezulu kwe-1450ºc nesabelo: i-SIC + C + Si -> Sic. UZONWABISA NGOKUGQIBELA IXESHA LOKUGQIBELA LWE-SILICON, EYINTONI IXESHA LOKUGQIBELA IPROPITER EZIQHELEKILEYO NOKUKHUSELEKA. Utshintsho oluncinci lwenzeka ngexesha lenkqubo; Nangona kunjalo, umaleko we-silicon uhlala ukho kumphezulu wenxalenye yokugqibela. I-ZPC RBIC yam yamkele itekhnoloji ye-Advanced, ivelisa ipleyiti yokungaxhathisi, iipleyiti, iibhloko, iibhloksi, i-fuby, i-fuby, njalo njalo.
I-Nitride ye-Bilicon Carbide (Nvic, NSIC). Izinto eziqala zizinto eziqala yi-silicon carbide plus dibanisa i-silicon powder. I-Compact Green Compact igxothiwe kwi-nitrogen ye-nitrogen apho intetho ye-SIC + 3si + 2N2 -> Si3). Izinto zokugqibela zokugqibela zibonisa utshintsho oluncinci ngexesha lokuqhutywa. Izinto ezibonakalayo zibonisa inqanaba elithile lokuphathwa gadalala (ngokwesiqhelo malunga ne-20%).
Ngqo kwi-selicon ye-silicon ye-selicon (i-SSIC). I-Silicon Carbide sisixhobo esifunwayo esiqala. I-AIDS AIDS I-AIDS yi-boron kunye nekhabhoni, kunye noxinzelelo lwenzeka ngenkqubo yokuphendula karhulumente yelizwe ngaphezulu kwe-2200ºC. Iipropathi zayo eziphezulu kunye nokunganyangeki kwe-corrosion ziphezulu ngenxa yokunqongophala kwenqanaba lesibini leglasi kwimida yengqolowa.
Isigaba se-wolting silit selicon carbide (LSSS). I-Silicon Carbide sisixhobo esifunwayo esiqala. Isifo sokuxinana si-Yttrim Oxide putide pluaminum oxide. Uxinzelelo lwenzeka ngaphezulu kwe-2100ºC yinkqubo yesigaba senqanaba lamanzi kunye neziphumo kwiSigaba seSibini seglasi. Iipropathi zoomatshini zihlala ziphezulu kakhulu zine-SSIC, kodwa ipropathi yobushushu obuphezulu kunye nokuchasana nokunganyangeki akulunganga.
Ishushu icinezelwe i-selicon carbide (i-hpsic). I-selicon carbide powder isetyenziswa njengezixhobo ezifunwayo. UGawulayo oSebenzayo yiBoron dibanisa i-carbon okanye i-yttrium oxide plus plus suminium oxide. Uxinzelelo lwenzeka ngokusetyenziswa ngaxeshanye loxinzelelo loomatshini kunye nobushushu ngaphakathi kwegrafiti yegrafiki yokufa. Iimilo ziyipleyiti ezilula. Izixa eziphantsi zezincedisi zenkunkuma zinokusetyenziswa. Iipropathi zoomatshini kwezinto ezishushu ezishushu zisetyenziswa njengesiseko nxamnye nezinye iinkqubo ezithelekiswa nazo. Iipropathi zombane zinokuguqulwa ngotshintsho kuGawulayo.
I-CVD Silicon Carbide (CVDSIC). Le mpahla yenziwa yinkqubo ye-Vapor yePhekhemikhali (i-CVD) ebandakanya ukuphendula: I-Ch3sicl3 -> I-SIC + 3HCL. Indlela yokuphendula yenziwa phantsi kwe-h2 tusmosphera kunye ne-SIC ifakwe kwigrafu. Inkqubo iphumela kwizinto eziphezulu kakhulu; Nangona kunjalo, kuphela iiplate ezingenakwenziwa kuphela. Inkqubo ibiza kakhulu ngenxa yamaxesha okuphendula kancinci.
I-Vapor ye-Vapor ye-Slicon Carbide (CVCs). Le nkqubo iqala nge-procurrite yegrafiti ye-procurrite efakwe kwiimilo ezikufutshane ne-Net-Net State State. Inkqubo yokuguqula iZifundo ziyinxalenye yegraphite kwi-vapor eqinileyo-yombuso eqinileyo ukuze ivelise i-polycrystalline, i-Stoichiometricly ichanekile i-SIC echanekileyo. Le nkqubo ilawulwa ngokuqinileyo ivumela uyilo olunzima ukuba luveliswe kwinxalenye ye-SIC eguqule ngokupheleleyo eneempawu zokunyamezela kunye nokucoceka okuphezulu. Inkqubo yokuguqula inciphisa ixesha eliqhelekileyo lemveliso kwaye inciphise iindleko ngaphezulu kwezinye iindlela.
I-Post Ixesha: Jun-16 ukuya ku-2008