I-SIC - I-Silicon Carbide

I-Silicon Carbide yafunyanwa ngo-1893 njengomzi-mveliso wabetha ivili lokugaya kunye neebhuleki zemoto. Malunga nenkulungwane ye-20, i-SIC Wafer isebenzisa ukukhula ukuba ibandakanye kwitekhnoloji ye-led. Ukusukela ngoko, yandisiwe kwizicelo ezininzi ze-semicondy ngenxa yepropathi yayo efanelekileyo. Ezi ndawo zibonakalayo zikuluhlu olubanzi lokusebenzisa ngaphakathi nangaphandle komzi mveliso we-semicondcuctor. Ngomthetho ka-Moore ovela ekufikeleleni kuye, iinkampani ezininzi ngaphakathi kweSomicondcucrive ijonge kwi-selicon carbide njengezixhobo ze-semiconductor. I-SIC inokuveliswa usebenzisa ii-Polytypes ezininzi ze-SIC, nangona i-semicondctor, uninzi lwayo yi-4h-sic, nge-6h- ukuba incinci njengoko intengiso ye-SIC ikhule. Xa kubhekiswa kwi-4h- nange-6h- i-carbickon ye-silicon, i-H imele ubume be-crystal lattle. Inombolo imele ukulandelelana kwe-atom phakathi kwesakhiwo sekristali, oku kuchazwe kwitshati ye-SVM itshati. Izibonelelo ze-Silicon Carbide ubunzima zininzi izibonelelo zokusebenzisa i-selicon carbide ngaphezulu kwendawo yezilwanyana yesilivere. Enye yezona zinto zibalulekileyo zale nto bubunzima bayo. Oku kunika izinto ezibonakalayo, kwisantya esiphezulu, iqondo lobushushu kunye / okanye izicelo zevoltage ephezulu. I-Silicon Carbide i-wafide ye-suft ineengxaki zokuphumelela okuphezulu, okuthetha ukuba zinokudlulisela ubushushu ukusuka kwinqaku elinye ukuya kwenye kakuhle. Oku kuphucula ukuqhekeka kombane kwaye ekugqibeleni ubuncinci, enye yeenjongo eziqhelekileyo zokutshintshela kwi-SIC ye-SIC. Amandla e-thermal scoretes ikwanelungelo lokufumana ulwandiso lwe-thermal. Ukwanda kwe-thermal sisixa kunye nesikhokelo sezinto ezikhoyo okanye izivumelwano njengoko zikhetha okanye zipholile. Eyona nkcazo ixhaphakileyo ngumkhenkce, nangona iziphatha ngokuchaseneyo uninzi lweentsimbi, ukwanda njengoko kupholile kwaye kuncipha njengokuvala. I-Silicon ye-Silicon ye-selicon ye-calbide yeyodwa yokwandiswa kwe-thermal kuthetha ukuba ayitshintshi kakhulu ubungakanani okanye ikhutshiwe, nto leyo eyenza igqibelele ukuba ilungele i-chip enye. Elinye inyameko yala maphenyane kukuxhathisa kwabo phezulu kothuka. Oku kuthetha ukuba banokwazi ukutshintsha amaqondo obushushu ngokukhawuleza ngaphandle kokophula okanye ukuqhekeka. Oku kudala ithuba elicacileyo xa bekukwenza izixhobo ezicacileyo njengoko zinye iimpawu zoxinzelelo eziphucula ubomi kunye nokusebenza kwe-selicon carbide xa kuthelekiswa nemveli yesilivere. Ngaphezulu kwezakhono zayo ze-thermal, luphawu olunqabileyo kakhulu kwaye alusabi nge-AIDD, ialkalis okanye ityiwa kwamaqondo obushushu ukuya kuthi ga kwi-800 ° C. Oku kunika ezi ntshukumo ziguquguqukayo kwizicelo zazo kwaye ziphinde zincedise amandla abo okwenza i-bulk Silicon kwizicelo ezininzi. Amandla ayo kumaqondo obushushu aphezulu ayakuvumela ukuba isebenze ngokukhuselekileyo kumaqondo obushushu angaphezulu kwe-1600 ° C. Oku kwenza ukuba kube yinto efanelekileyo yokuthambisa phantse nasiphi na isicelo seqondo lokushisa esiphezulu.