I-SiC-Silicon Carbide

I-silicon carbide yafunyanwa ngo-1893 njenge-abrasive yemizi-mveliso yokugaya amavili kunye neziqhoboshi zemoto. Malunga nesiqingatha senkulungwane yama-20, ukusetyenziswa kwe-SiC wafer kwanda ukubandakanya kubuchwephesha be-LED. Ukusukela ngoko, iye yanda kwizicelo ezininzi ze-semiconductor ngenxa yeempawu zayo eziluncedo. Ezi propati zibonakala kuluhlu lwayo olubanzi lokusetyenziswa ngaphakathi nangaphandle kwishishini le-semiconductor. NgoMthetho kaMoore obonakala ufikelela kumda wawo, iinkampani ezininzi ngaphakathi kumzi-mveliso we-semiconductor zijonge kwi-silicon carbide njengesixhobo se-semiconductor sekamva. I-SiC inokuveliswa ngokusebenzisa i-polytypes ezininzi ze-SiC, nangona ngaphakathi kwishishini le-semiconductor, ininzi ye-substrates ingaba yi-4H-SiC, kunye ne-6H-ingabi yinto eqhelekileyo njengoko i-market ye-SiC ikhulile. Xa kubhekiselwa kwi-4H- kunye ne-6H-silicon carbide, i-H imele isakhiwo se-crystal lattice. Inani limele ukulandelelana kokupakishwa kwee-athomu ngaphakathi kwesakhiwo sekristale, oku kuchazwe kwitshathi yezakhono ze-SVM ngezantsi. Izinto eziluncedo kuBulukhuni beSilicon Carbide Kukho iingenelo ezininzi zokusebenzisa i-silicon carbide ngaphezulu kwe-silicon substrates zemveli. Enye yeenzuzo eziphambili zesi sixhobo kukuqina kwayo. Oku kunika imathiriyeli izibonelelo ezininzi, kwisantya esiphezulu, ubushushu obuphezulu kunye/okanye usetyenziso lwamandla ombane aphezulu. I-silicon carbide wafers ine-conductivity ephezulu ye-thermal, oku kuthetha ukuba banokudlulisela ubushushu ukusuka kwindawo enye ukuya kwelinye iqula. Oku kuphucula ukuhanjiswa kombane kwaye ekugqibeleni i-miniaturization, enye yeenjongo eziqhelekileyo zokutshintshela kwii-wafers ze-SiC. I-Thermal capabilities SiC substrates nazo zine-coefficient ephantsi yokwandiswa kwe-thermal. Ukwandiswa kweThermal sisixa kunye nesalathiso semathiriyeli eyandayo okanye izivumelwano njengoko ishushu okanye iphola. Eyona ngcaciso ixhaphakileyo ngumkhenkce, nangona uziphatha ngokuchaseneyo noninzi lwesinyithi, ukhula njengoko uphola kwaye ucutheka njengoko ushushu. I-coefficient ephantsi ye-silicon carbide yokwandiswa kwe-thermal ithetha ukuba ayitshintshi kakhulu kubungakanani okanye kwimilo njengoko ifudunyezwa okanye ipholiswa phantsi, eyenza ilungele ukufakwa kwizixhobo ezincinci kunye nokupakisha ii-transistors ezininzi kwi-chip enye. Enye inzuzo enkulu yala ma-substrates kukumelana kwawo okuphezulu nokutshatyalaliswa kwe-thermal. Oku kuthetha ukuba banamandla okutshintsha amaqondo obushushu ngokukhawuleza ngaphandle kokuqhekeka okanye ukuqhekeka. Oku kudala inzuzo ecacileyo xa kusenziwa izixhobo njengoko kukwezinye iimpawu zokuqina eziphucula ubomi kunye nokusebenza kwe-silicon carbide xa kuthelekiswa ne-silicon enkulu yendabuko. Ngaphezulu kwamandla ayo okushisa, i-substrate ehlala ixesha elide kwaye ayisebenzi nge-acids, i-alkalis okanye ityuwa etyhidiweyo kwiqondo lokushisa ukuya kwi-800 ° C. Oku kunika ezi substrates ukuguquguquka kwizicelo zazo kwaye kunceda ngakumbi ukukwazi kwabo ukwenza isilicon enkulu kwizicelo ezininzi. Ukomelela kwayo kumaqondo obushushu aphezulu ikwavumela ukuba isebenze ngokukhuselekileyo kumaqondo obushushu angaphezu kwe-1600°C. Oku kuyenza ibe yi-substrate efanelekileyo malunga naso nasiphi na isicelo sobushushu obuphezulu.