RBSiC/SiSiC Reaction Bonded Silicon Carbide

REACTION BONDED SILICON CARBIDE USHWANKATHELO
I-Reaction edibeneyo ye-silicon carbide, ngamanye amaxesha ibizwa ngokuba yi-siliconized silicon carbide.

Ukungeniswa kunika izinto ezidityanisiweyo ezikhethekileyo zomatshini, i-thermal, kunye neempawu zombane ezinokuthi zilungiswe kwisicelo.

I-Silicon Carbide yenye yezona zinto zinzima kwiiseramics, kwaye igcina ubulukhuni kunye namandla kumaqondo obushushu aphakamileyo, nto leyo eguqulela phakathi kwezona zinto zixhathisayo zokunxiba. Ukongezelela, i-SiC ine-conductivity ephezulu ye-thermal, ngakumbi kwi-CVD (i-chemical vapor deposition) ibakala, enceda ekuxhathiseni ukothuka kwe-thermal. Kwakhona isiqingatha sobunzima bentsimbi.

Ngokusekwe kule ndibaniselwano yokuqina, ukuxhathisa ukunxiba, ubushushu kunye nomhlwa, i-SiC ihlala icaciswa kubuso betywina kunye neenxalenye zempompo yokusebenza okuphezulu.

I-Reaction Bonded SiC inowona buchule bokuvelisa ixabiso eliphantsi ngenkozo yekhosi. Ibonelela ngobulukhuni obusezantsi kunye nokusebenzisa ubushushu, kodwa i-thermal conductivity ephezulu.

I-Direct Sintered SiC ilibakala elingcono kune-Reaction Bonded kwaye iqhele ukuchazwa kumsebenzi wobushushu obuphezulu.