Umgaqo osisiseko wokususwa kothuli lombhobho wesulphurizing kukwahlula amasuntswana othuli emoyeni okanye kumsi
Okokuqala, amasuntswana othuli amanziswe ngesitshizi samanzi ukwandisa ubungakanani besuntswana kunye nomxhuzulane okhethekileyo. Amasuntswana othuli aya kuthi ke ahlukane ne-atmosfera okanye igesi yombane. Xa umlomo we-desulfurization uphukile, kufuneka sithathe umbhobho phantsi. Umsebenzi othile umi ngolu hlobo lulandelayo:
I-1) iindawo zokulinda okanye iindawo ezizimeleyo kufuneka zigcinwe ngokufanelekileyo: Ababoneleli ngokubanzi banokupakisha okukhethekileyo kunye nokubhala, oko kukuthi, kufuneka babekwe ngaphandle kokusetyenziswa. Imibhobho ye-desulfurizing esusiweyo kufuneka ifakwe kwioli (i-petroli, ioli ye-diesel, njl.) ukukhusela i-rust.
2) Xa kukho impazamo malunga ne-desulfurization nozzle esetyenziswayo, ukuhlolwa kwe-nozzle kufuneka kuphulwe. Abasebenzisi kufuneka basebenzise izixhobo ezikhethekileyo okanye izixhobo ezifanelekileyo zokuqhawula kunye nokudiliza ubudlelwane bendibano inyathelo ngenyathelo.
3) Imilomo ekhutshiweyo kufuneka ifakwe ngokukhawuleza kwibhentshi yovavanyo lombhobho endaweni yalo naluphi na unyango. Ngokoxinzelelo olumiselweyo lokusebenza, iimpawu zokuhamba, ukubonwa kwe-angle yokutshiza kunye nokuqwalaselwa komgangatho wokutshiza kuyenziwa. Oku kungasonjululwa xa ulungisa ingxaki.
Umbhobho we-desulfurization uye wavela phantsi kweemfuno zokhuseleko lokusingqongileyo. Injongo ephambili yemveliso kukungcolisa igesi kunye nokunye. Oku kwenza ukuba imveliso yemizi-mveliso ivumelane nokusingqongileyo. Iimpawu zeekhemikhali ze-nozzle desulfurizing zichazwe ngezantsi, kwaye sijonge phambili ukukunceda.
Ukuxhathisa kwi-oxidation yemilomo ye-desulphurizing
Xa izinto ze-silicon carbide zifudunyezwa kwii-degrees ze-1300 emoyeni, i-silicon dioxide layer ekhuselayo yenziwa kumphezulu we-silicon carbide crystal. Ukuqina komgangatho okhuselayo kuthintela i-silicon carbide yangaphakathi ukuba ingaqhubeki ne-oxidize. Oku kwenza ukuba i-silicon carbide ibe nokuxhathisa okulungileyo kwe-oxidation. Xa iqondo lokushisa lingaphezulu kwe-1900K (1627 C), ifilimu yokukhusela i-silica iyatshatyalaliswa. Ngeli xesha, i-oxidation ye-silicon carbide iyancipha. Ke ngoko, i-1900K lelona qondo lobushushu liphezulu lesilicon carbide kwi-oxidizing atmosphere.
Ukumelana ne-Acid kunye ne-alkaline kwimibhobho ye-desulphurizing:
Kwinkalo yokumelana ne-asidi, ukuxhathisa kwe-alkali kunye ne-oxidation, umsebenzi wefilimu ekhuselayo ye-silicon dioxide inokunyusa ukunyanzeliswa kwe-asidi kunye nokumelana ne-alkali ye-silicon carbide.
Ixesha lokuthumela: Jul-25-2018