Ukucima imibhobho ye-Silicon Carbide Radiation: "IziThuthi eziThermal" kwindawo yoBubushushu obuphezulu

Kwintsimi yokushisa okuphezulu kwezoshishino, ukufezekisa ukuhanjiswa kobushushu okukhuselekileyo kunye nokusebenzayo kuye kwaba yinto ebalulekileyo kwimpumelelo yezobuchwepheshe.Ityhubhu ye-silicon carbide radiationsisixhobo esikhethekileyo esenzelwe ngokukodwa iimeko zobushushu obuphezulu. Isebenza "njengesithuthi samandla e-thermal" esithe cwaka kwaye idlala indima ebalulekileyo ekufudumezeni iziko kumashishini afana nesinyithi, ubunjineli beekhemikhali, kunye neekeramics. Makhe sityhile imfihlelo yomgaqo-siseko wayo wokusebenza ngokusebenzisa iimbono ezintathu ezingundoqo.
1, Umqobo oqinileyo wokukhusela undoqo
Amacandelo angaphakathi e-silicon carbide radiation ityhubhu zisongelwe ngononophelo kwityhubhu yangaphandle eyenziwe nge-silicon carbide material, yenze ukhuseleko olumbini: ityhubhu ye-silicon carbide yangaphandle isebenza njengesixhobo sokuhambisa ubushushu kunye nesithintelo sokhuseleko, ukuqinisekisa ukuba izinto zokufudumeza zangaphakathi zodwa ngokupheleleyo kwindawo yesithando somlilo. Ayinakwandisa kuphela ngokufanelekileyo ixesha lokuphila kweetyhubhu ze-silicon carbide radiation, kodwa ikwanciphisa kakhulu iindleko zokugcinwa.
2. Indlela yokuhambisa ubushushu eyahlukileyo
Ngokungafani nokuqhutyelwa kokushisa kwendabuko, inzuzo ephambili yezixhobo ezinjalo idluliselwe "kwemitha ye-thermal". Umphezulu wetyhubhu ye-silicon carbide efudunyezwe kwi-incandescent iya kuqhubeka ikhupha amaza emitha ye-infrared ngaphandle. Olu khanyiso lungabonakaliyo lunokungena emoyeni luze lusebenze ngokuthe ngqo kwinto eshushu, ngokufanayo nendlela ukukhanya kwelanga okufudumeza ngayo umhlaba. Ukugqithiswa kobushushu obukhanyayo kuthintela ilahleko ephakathi, kuphucula kakhulu ukusebenza kakuhle kwe-thermal xa kuthelekiswa nokufudumeza okuqhelekileyo kwe-convective, kwaye kubangele ukusabalalisa ubushushu obufanayo.

Ityhubhu ye-silicon carbide radiation
3. Ukuphumelela kwecrystallization kwisayensi yezinto
Ukukhethwa kwe-silicon carbide (SiC), uhlobo olutsha lwemathiriyeli ye-ceramic, inokuthathwa njengento yokugqiba. Ukumelana nokushisa kwayo okuphezulu kuvumela umzimba wombhobho ukuba usebenze ngokuqhubekayo kwi-1350 ℃, kwaye amandla ayo aphindwe kaninzi kunentsimbi eqhelekileyo; Ubume obukhethekileyo bekristale buzisa ukuxhathisa ukothuka kwe-thermal, nasemva kokufumana ukupholisa ngequbuliso kunye nokufudumeza, akuyi kuqhekeka; Ikwanazo neepropathi zokunqanda ukubola kwaye inokumelana nemimoya eyonakalisayo yemizi mveliso ngokulula. Ezi mpawu kunye zenza isiseko sobomi benkonzo ende yesixhobo.
Ngokunyuka kwemfuno yemveliso ecocekileyo, iityhubhu ze-silicon carbide radiation ngokuthe ngcembe zithatha indawo yeetyhubhu zokufudumeza zesinyithi kwaye zibe lukhetho olutsha lokuphucula izixhobo ezishushu zeshishini. Uyilo lwayo olutsha "lokufudumala okuzimeleyo kunye nokudluliselwa kwamandla emitha" kunciphisa kakhulu iindleko zokugcinwa ngelixa kuphuculwa ukusebenza kakuhle kwamandla, ukubonelela ngenkxaso yobugcisa obuthembekileyo kwinguqu eluhlaza kwishishini lokuvelisa. Lo mzobo wemizi-mveliso odibanisa ngokugqibeleleyo iipropati eziphathekayo kunye nemigaqo yokutshintshwa kobushushu ichaza kwakhona umgangatho weshishini lobushushu obuphezulu.


Ixesha lokuposa: Apr-25-2025
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