Malunga ne-silicon carbide kunye ne-ceramics ye-SIC

I-Silicon Carbide inenkcaso egqwesileyo yokuthuka, amandla okuphezulu koomatshini, ukuqhutywa kwe-thermas ephezulu, i-ofisi ephantsi kakhulu ye-thermal, kunye nokuchasana ne-thermal ye-thermal enamakhaya amaqondo obushushu anqabileyo. I-Silicon Carbide yenziwe nge-titrahedra ye-carbon kunye neeatom ze-silicon ezinamaqhina aqinileyo kwi-crystal lattle. Oku kuvelisa izinto ezinzima nezinamandla. I-Silicon Carbide ayihlaselwanga ngayo nayiphi na i-asidi okanye i-alkalis okanye i-molten ikhulisa ukuya kwi-800ºc. Emoyeni, i-SIC ibeka i-silicon yesilwanyana esikhuselayo kwi-1200ºC kwaye ikwazi ukusetyenziselwa ukuya kwi-1600ºc. Ukuqhutywa kwe-thermal ephezulu phakathi kokwandiswa komhlaba okuphantsi kunye namandla aphezulu anike ezi zixhobo ezizothukayo. Ukungcola kwesilicon carbides kunye nokungcola komda okuncinci okanye okungekho mthethweni kugcina amandla abo kubushushu obuphakamileyo, ukuya kwi-1600ºc ngaphandle kokulahleka. Ukucoceka kwamachiza, ukuxhathisa kuhlaselo lwekhemikhali kubushushu, kunye nokugcinwa kwamaqondo obushushu aphezulu kwenza ukuba ezi zinto zikhe zaziwa kakhulu njengezixhasa itreyini ye-wamicondcuctor. Ukulandelwa kwe-thpellstorcturikol olwenziwe ngolwimi kukukhokelela ekusebenziseni kwayo kubuchule bokufudumeza kwiziko lombane, kunye necandelo eliphambili kwi-Therrmistors (iqondo lokugcina ubushushu) kunye nabaphathi abaguqulweyo. Ezinye iinkqubo zibandakanya ubuso botywina, zinxibe iipleyiti, iibherithi kunye neetyhubhu ze-liner.