Malunga neSilicon Carbide kunye neeseramikhi zeSiC

I-Silicon Carbide inokumelana okugqwesileyo ku-corrosion, amandla omatshini aphezulu, ukuhanjiswa okuphezulu kwe-thermal, i-coefficient ephantsi kakhulu yokwandiswa kwe-thermal, kunye nokumelana nokothuka kwe-thermal kune-aluminell namet amaqondo obushushu aphezulu kakhulu. I-silicon carbide yenziwe nge-tetrahedra ye-carbon kunye ne-athomu ye-silicon enezibophelelo eziqinileyo kwi-crystal lattice. Oku kuvelisa into enzima kakhulu kwaye eyomeleleyo. I-silicon carbide ayihlaselwa naziphi na iiasidi okanye iialkali okanye iityuwa ezinyibilikisiweyo ukuya kuthi ga kwi-800ºC. Emoyeni, i-SiC yenza i-silicon oxide ekhuselweyo kwi-1200ºC kwaye iyakwazi ukusetyenziswa ukuya kwi-1600ºC. I-thermal conductivity ephezulu edityaniswa nokwandiswa kwe-thermal ephantsi kunye namandla aphezulu kunika le mathiriyeli iimpawu ezinqabileyo zokuxhathisa ukothuka. Iiseramics ze-silicon carbide ezinobumdaka obuncinci bomda wengqolowa okanye ongenazo zigcina amandla azo ukuya kumaqondo obushushu aphezulu kakhulu, zisondela kwi-1600ºC ngaphandle kokuphulukana namandla. Ukucoceka kweekhemikhali, ukuchasana nokuhlaselwa kweekhemikhali kwiqondo lokushisa, kunye nokugcinwa kwamandla kumaqondo okushisa aphezulu kuye kwenza le nto ithandwa kakhulu njengenkxaso ye-wafer tray kunye ne-paddles kwiziko le-semiconductor. I-Thcell nameelectrical conduction yezinto ikhokelele ekusetyenzisweni kwayo kwizinto zokufudumeza zokumelana neziko lombane, kwaye njengecandelo eliphambili kwi-thermistors (i-resistors zobushushu eziguqukayo) kunye ne-varistors (i-voltage variable resistors). Ezinye izicelo ziquka ubuso bokutywinwa, iipleyiti zokugqoka, iibheringi kunye neetyhubhu ze-liner.