- I-advanteges ye-REACTION BONDED SILICON CARBIDE
I-Reaction Bonded Silicon Carbide (i-RBSC, okanye i-SiSiC) iimveliso zibonelela ngobulukhuni obugqithisileyo / ukuxhathisa ukonakala kunye nozinzo olubalaseleyo lweekhemikhali kwiindawo ezinobundlobongela. I-Silicon Carbide yinto eyenziweyo ebonisa iimpawu zokusebenza eziphezulu ezibandakanya:
lUkuchasana kweekhemikhali okugqwesileyo.
Amandla e-RBSC aphantse abe ngama-50% amakhulu kunalawo amaninzi e-nitride ebotshelelwe kwi-silicon carbides. I-RBSC yeyona nto igqwesileyo yokuxhathisa i-corrosion kunye ne-antioxidation ceramic.
lUkunxiba okugqwesileyo kunye nokumelana nempembelelo.
Yeyona nto iphambili yetekhnoloji yeceramic ekwaziyo ukukrazuka. I-RBSiC inobunzima obuphezulu obusondela kwidayimani. Yenzelwe ukusetyenziswa kwizicelo zeemilo ezinkulu apho amabakala aphikisayo e-silicon carbide abonisa ukunxitywa kwe-abrasive okanye umonakalo ovela kwimpembelelo yamasuntswana amakhulu. Ixhathisa ekungeneni ngokuthe ngqo kwamasuntswana okukhanya kunye neempembelelo kunye nokutyibilika kwebrashi yezinto eziqinileyo eziqulathe uludaka. Inokubunjwa ibe ziimilo ezahlukeneyo, kuquka iimilo zekhowuni kunye nemikhono, kunye neziqwenga zobunjineli ezintsonkothileyo eziyilelwe izixhobo ezibandakanyekayo ekusetyenzweni kwemathiriyeli ekrwada.
lUkuxhathisa ukothuka kwe-thermal.
Izinto ezidityanisiweyo ze-silicon carbide zibonelela ngokuxhathisa ukothuka kwe-thermal kodwa ngokungafaniyo neekeramics zemveli, zikwadibanisa uxinaniso oluphantsi kunye namandla omatshini aphezulu.
lAmandla aphezulu (ufumana amandla kwiqondo lokushisa).
I-Reaction bonded I-Silicon carbide igcina amandla ayo omatshini kumaqondo obushushu aphakamileyo kwaye ibonisa amanqanaba asezantsi kakhulu okurhubuluza, iyenza ibe lukhetho lokuqala lwezicelo ezithwele umthwalo kuluhlu lwe-1300ºC ukuya kwi-1650ºC (2400ºC ukuya kwi-3000ºF).
- Iphepha leDatha lobuGcisa
| I-datasheet yobuGcisa | Iyunithi | I-SiSiC (RBSiC) | NbSiC | I-ReSiC | Sintered SiC |
| Reaction Bonded Silicon Carbide | Nitride Bonded Silicon Carbide | Recrystallized Silicon Carbide | Sintered Silicon Carbide | ||
| Unizi lolwapho kuyiwa khona | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2,75 | 2.8 |
| SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Vula i-Porosity | (%) | <0.5 | 10–12 | 15-18 | 7~8 |
| Ukugoba amandla | Mpa / 20℃ | 250 | 160-180 | 80-100 | 500 |
| Mpa / 1200℃ | 280 | 170-180 | 90-110 | 550 | |
| Imodyuli ye-elasticity | GPA / 20℃ | 330 | 580 | 300 | 200 |
| GPA / 1200℃ | 300 | ~ | ~ | ~ | |
| I-Thermal conductivity | W/(m*k) | 45 (1200℃) | 19.6 (1200℃) | 36.6 (1200℃) | 13.5~14.5 (1000℃) |
| Ukuhambelana nokwandiswa kwe-thermal | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Isikali sobulukhuni sikaMons (Ubulukhuni) | 9.5 | ~ | ~ | ~ | |
| Ubushushu bokusebenza okuphezulu | ℃ | 1380 | 1450 | 1620 (oxid) | 1300 |
- Imeko yoShishinoUkuphendula ngeSilicon Carbide:
Ukuveliswa kwamandla, iMigodi, iMichiza, iPetrochemical, iKiln, ishishini lokuvelisa oomatshini, iMinerals & Metallurgy njalo njalo.
Nangona kunjalo, ngokungafaniyo nesinyithi kunye ne-alloys yazo, akukho nqobo yomgangatho wokusebenza kwishishini le-silicon carbide. Ngoluhlu olubanzi lweengoma, ukuxinana, ubuchule bokuvelisa kunye namava enkampani, amacandelo e-silicon carbide anokwahluka kakhulu ngokuhambelana, kunye neepropati zoomatshini kunye neekhemikhali. Ukhetho lwakho lomthengisi lumisela inqanaba kunye nomgangatho wemathiriyeli oyifumanayo.