Recrystallized Silicon Carbide (RXSIC, ReSIC, RSIC, R-SIC). Lintho tse qalang tse tala ke silicon carbide. Ha ho lisebelisoa tsa densification tse sebelisoang. Likopano tse tala li futhumatsoa ho feta 2200ºC bakeng sa ho kopanngoa ho qetela. Thepa e hlahisoang e na le hoo e ka bang 25% porosity, e fokotsang thepa ea eona ea mechine; leha ho le joalo, thepa e ka ba e hloekileng haholo. Mokhoa ona o na le chelete e ngata.
Reaction Bonded Silicon Carbide (RBSIC). Lisebelisoa tse tala tse qalang ke silicon carbide hammoho le carbon. Karolo e tala e kenngoa ka silicon e qhibilihisitsoeng ka holimo ho 1450ºC ka karabelo: SiC + C + Si -> SiC. The microstructure ka kakaretso e na le palo e itseng ea silicon e feteletseng, e fokotsang thepa ea eona ea mocheso o phahameng le ho hanyetsa kutu. Phetoho e nyane e etsahala nakong ea ts'ebetso; leha ho le joalo, lera la silicon hangata le teng holim'a karolo ea ho qetela. ZPC RBSiC e amohetse theknoloji e tsoetseng pele, e hlahisang lesela la ho hanyetsa, lipoleiti, lithaele, leholiotsoana, li-blocks, likarolo tse sa tloaelehang, le li-nozzles tsa FGD, mocheso oa mocheso, liphaephe, liphaephe, joalo-joalo.
Nitride Bonded Silicon Carbide (NBSIC, NSIC). Lisebelisoa tse qalang ke silicon carbide hammoho le phofo ea silicon. Motsoako o motala o chesoa moeeng oa naetrojene moo karabelo ea SiC + 3Si + 2N2 -> SiC + Si3N4 e hlahang. Thepa ea ho qetela e bonts'a phetoho e nyane ea boholo nakong ea ts'ebetso. Thepa e bonts'a boemo bo itseng ba porosity (hangata e ka bang 20%).
Silicon Carbide e otlolohileng (SSIC). Silicon carbide ke thepa e qalang e tala. Lithuso tsa densification ke boron plus carbon, 'me densification e etsahala ka mokhoa o tiileng oa boemo bo ka holimo ho 2200ºC. Lintho tsa eona tsa mocheso o phahameng le ho hanyetsa kutu li phahame ka lebaka la khaello ea khase ea bobeli ea likhalase meeling ea lijo-thollo.
Liquid Phase Sintered Silicon Carbide (LSSIC). Silicon carbide ke thepa e qalang e tala. Lithuso tsa densification ke yttrium oxide hammoho le aluminium oxide. Densification e etsahala ka holimo ho 2100ºC ka karabelo ea boemo ba mokelikeli 'me e fella ka mokhahlelo oa bobeli oa khalase. Lisebelisoa tsa mochini ka kakaretso li phahametse SSIC, empa thepa ea mocheso o phahameng le ho hanyetsa ha kutu ha li ntle joalo.
Mocheso oa Silicon Carbide (HPSIC). Silicon carbide powder e sebelisoa e le lisebelisoa tse qalang. Lithuso tsa densification hangata ke boron hammoho le carbon kapa yttrium oxide hammoho le aluminium oxide. Densification e etsahala ka ts'ebeliso ea nako e le 'ngoe ea khatello ea mochine le mocheso ka hare ho graphite die cavity. Libopeho ke lipoleiti tse bonolo. Lisebelisoa tse fokolang tsa sintering li ka sebelisoa. Thepa ea mechine ea thepa e hatelitsoeng e chesang e sebelisoa e le motheo oo mekhoa e meng e bapisoang le eona. Thepa ea motlakase e ka fetoloa ka ho fetola lithuso tsa densification.
CVD Silicon Carbide (CVDSIC). Boitsebiso bona bo entsoe ka mokhoa oa ho kenya mouoane oa lik'hemik'hale (CVD) o kenyelletsang karabelo: CH3SiCl3 -> SiC + 3HCl. Karabelo e etsoa tlas'a sepakapaka sa H2 'me SiC e behoa holim'a substrate ea graphite. Ts'ebetso e etsa hore ho be le boitsebiso bo phahameng haholo bo hloekileng; leha ho le joalo, ho ka etsoa lipoleiti tse bonolo feela. Mokhoa ona o theko e boima haholo ka lebaka la linako tse liehang tsa ho arabela.
Chemical Vapor Composite Silicon Carbide (CVCSiC). Ts'ebetso ena e qala ka selelekela sa graphite se entsoeng ka mochini ho etsa libopeho tse haufi-ufi sebakeng sa graphite. Ts'ebetso ea phetoho e laola karolo ea graphite ho in situ vapor solid-state reaction ho hlahisa polycrystalline, stoichiometrically correct SiC. Ts'ebetso ena e laoloang ka thata e lumella meralo e rarahaneng hore e hlahisoe ka karolo e fetotsoeng ea SiC e nang le likarolo tse thata tsa mamello le bohloeki bo phahameng. Ts'ebetso ea phetoho e khutsufatsa nako e tloaelehileng ea tlhahiso 'me e fokotsa litšenyehelo ho feta mekhoa e meng.* Mohloli (ntle le moo ho boletsoeng): Ceradyne Inc., Costa Mesa, Calif.
Nako ea poso: Jun-16-2018