Silicon Carbide iyo Silicon Nitride waxay leeyihiin waste liita oo liita oo leh bir la gubo. Ka sokow in lagu soo afjarayo magnesium, nikkel, chromium alfoy iyo bir aan la taaban karin, uma laha cadowyo kale oo loo yaqaan 'tolity', sidaa darteed waxay si ballaaran loogu isticmaalaa warshadaha elektaroonigga ah ee aluminium.
Warqaddan, iska caabbinta isku-darka ee dib-u-celinta dib-u-celinta silicon Carbide R-Siicon iyo Silicon Nitride Silicon Carbide SI3N4-SI Clicon oo ku dhex jira al-SI Alloy al-SI Alloy ayaa la baaray laga soo qaatay dhowr latitus.
Marka loo eego xogta tijaabada ah ee 9 jeer ee baaskiil wadista ee 1080h ° C ~ 620 ° C aluminium-silicon aloy dhalaalaya, natiijooyinka falanqaynta soosocda ayaa la helay.
Tijaabooyinkii R-Sic iyo SI3N4-SI3-SIC waxay kordheen waqti iskuxiran oo heerka sixitaanka ayaa hoos u dhacay. Heerka Qaab-dhismeedka loo yaqaan 'Commotion' wuxuu si buuxda ula dhaqmay xiriirka logarithmic ee la dhigto. (Jaantus 1)
Tilmaanta Enermaighrum Falanqaynta Awood-wadaag, muunado r-Sic iyo sambalka SI3-SI3-SIC4 laftooda ma leh aluminium-Silicon-ka. Qaabka XRD, xaddi cayiman oo aluminium-Silicon peak waa hadhaagga dusha sare ee aluminiumka-silicon ee silicon-Silicon allumon. (Jaantus 2 - Jaantus 5)
Iyada oo loo marayo falanqaynta Sem, maaddaama waqtiga dilaaga ah, qaab dhismeedka guud ee muunadeedka r-Sic iyo samballada SI3N4-SI3-SI3-SIC ay dabacsan yihiin, laakiin wax khasaare muuqda ah. (Jaantus 6 - Jaantus 7)
Xiisadda dusha sare ee σs / l ee isugeynta inta udhaxeysa dareeraha aluminium iyo xagal qodida ah θ ee udhaxeeya interfaces-ka waa> 90 °, iyo interface-ka inta udhaxeysa walxaha aluminim-ka ah ma aha qoyaan.
Sidaa darteed, agabyada R-Sic iyo SI3-SIC-yada waxay aad ugu fiican yihiin iska caabbinta aluminium silicon dhalaalaya oo farqi yar u leh. Si kastaba ha noqotee, qiimaha alaabta Si3n4-mic waa waxoogaa yar oo si guul leh ayaa loo codsaday sanado badan.
Waqtiga Post: Dec-17-2018