- FAA'IIDOOYINKA LOOGU TALAGALAY KAARUURTA SIILOONKA KU XIDHNAY EE REACTION
Alaabooyinka Silicon Carbide ee Reaction Bonded (RBSC, ama SiSiC) waxay bixiyaan adkeysi aad u daran/iska caabin xaaqid ah iyo xasilooni kiimikaad oo heer sare ah ee jawiga gardarada leh. Silicon Carbide waa walxo synthetic ah oo muujisa sifooyin waxqabad sare leh oo ay ka mid yihiin:
lIska caabin kiimiko heer sare ah.
Awoodda RBSC waxay ku dhowdahay 50% ka weyn tahay inta badan ee nitride-ku-xidhan kaarbides silikoon. RBSC waa iska caabbinta daxalka ugu fiican iyo dhoobada antioxidation.
lXiro heer sare ah iyo iska caabin saameyn leh.
Waa meesha ugu sarreysa tignoolajiyada dhoobada u adkeysata ee cabbirka weyn. RBSiC waxay leeyihiin qallafsanaan sare oo ku soo dhawaada kan dheeman. Loogu talagalay in loogu isticmaalo codsiyada qaababka waaweyn halkaas oo darajooyinka refractory ee silikoon carbide ay muujinayaan daal ama waxyeello ka timaadda qaybaha waaweyn. U adkaysta faragelinta tooska ah ee walxaha iftiinka iyo sidoo kale saamaynta iyo xoqidda silbashada ee adkaha culus ee ay ku jiraan slurries. Waxaa loo samayn karaa qaabab kala duwan, oo ay ku jiraan kootada iyo qaababka gacmo-gacmeedka, iyo sidoo kale qaybo badan oo injineernimo oo kakan oo loogu talagalay qalabka ku lug leh habaynta alaabta ceeriin.
lIska caabin shoog kulayl heer sare ah.
Qaybaha carbide silikoon ee ku xidhan falcelinta waxay bixiyaan iska caabin shoog kulayl oo heersare ah laakiin si ka duwan dhoobada dhaqameed, waxay sidoo kale isku daraan cufnaanta hoose oo leh awood farsamo sare leh.
lAwood sare (waxay ku kordhisaa xoogga heerkulka).
Reaction bonded Silicon carbide waxay haysaa inta badan xooggeeda makaanikada heerkulka sarreeya waxayna muujisaa heerar aad u hooseeya oo gurguurta, taasoo ka dhigaysa doorashada koowaad ee codsiyada xajinta ee u dhexeeya 1300ºC ilaa 1650ºC (2400ºC ilaa 3000ºF).
- Xaashida Xogta Farsamada
| Xaashida Xogta Farsamada | Unug | SiSiC (RBSiC) | NbSiC | ReSiC | Sintered SiC |
| Dareen-celinta Silicon Carbide | Nitride waxay ku xidhan tahay Silicon Carbide | Silicon Carbide oo dib loo cusboonaysiiyey | Silicon-carbide oo loo yaqaan 'Silicon Carbide' | ||
| Cufnaanta weyn | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65 ~ 2.75 | 2.8 |
| SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Porosity furan | (%) | <0.5 | 10 ~ 12 | 15-18 | 7 ~ 8 |
| Xoog laabashada | Mpa / 20℃ | 250 | 160 ~ 180 | 80-100 | 500 |
| Mpa / 1200 ℃ | 280 | 170-180 | 90-110 | 550 | |
| Hababka bartinimada | Gpa / 20 ℃ | 330 | 580 | 300 | 200 |
| Gpa / 1200 ℃ | 300 | ~ | ~ | ~ | |
| Dhaqdhaqaaqa kulaylka | W/ (m*k) | 45 (1200 ℃) | 19.6 (1200 ℃) | 36.6 (1200 ℃) | 13.5 ~ 14.5 (1000 ℃) |
| Ku-filan ballaadhinta kulaylka | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Miisaanka adag ee Mons' | 9.5 | ~ | ~ | ~ | |
| Heerkulka shaqada ugu badan | ℃ | 1380 | 1450 | 1620 (oxid) | 1300 |
- Kiiska WarshadahaSilikon Carbide ee ku xidhan falcelinta:
Korontada, Macdanta, Kiimikada, Kiimikada Batroolka, Kiln, Warshadaha wax soo saarka Mashiinada, Macdanta & Biraha iyo wixii la mid ah.
Si kastaba ha ahaatee, si ka duwan biraha iyo alwaaxdooda, ma jiraan shuruudo waxqabad warshadeed oo heersare ah oo loogu talagalay carbide silicon. Iyada oo leh noocyo kala duwan oo ka kooban, cufnaanta, farsamooyinka wax soo saarka iyo waayo-aragnimada shirkadda, qaybaha silikoon carbide waxay si weyn u kala duwanaan karaan si joogto ah, iyo sidoo kale qalabka farsamada iyo kiimikada. Doorashadaada alaab-qeybiye ayaa go'aamineysa heerka iyo tayada alaabta aad heleyso.