Recrystallized Silicon Carbide (RXSIC, ReSIC, RSIC, R-SIC). Iyo yekutanga mbishi zvinhu ndeye silicon carbide. Hapana densification aids inoshandiswa. Iwo akasvibira compacts anodziirwa kusvika pamusoro pe2200ºC kuitira kubatanidzwa kwekupedzisira. Iyo inokonzeresa zvinhu ine inenge 25% porosity, iyo inodzikamisa yayo michina maitiro; zvisinei, mashoko acho anogona kuva akachena zvikuru. Nzira yacho ine mari yakawanda.
Reaction Bonded Silicon Carbide (RBSIC). Zvigadzirwa zvekutanga ndeyesilicon carbide pamwe nekabhoni. Iyo yegirini chikamu chinozopinzwa nesilicon yakanyungudutswa pamusoro pe1450ºC nemaitiro: SiC + C + Si -> SiC. Iyo microstructure inowanzova nehumwe huwandu hwesilicon yakawandisa, iyo inodzikamisa yayo-yepamusoro-tembiricha zvivakwa uye corrosion kuramba. Dimensional shanduko shoma inoitika mukati mekuita; zvisinei, jira resilicon rinowanzovapo pamusoro pechikamu chekupedzisira. ZPC RBSiC inogamuchirwa tekinoroji yepamberi, inogadzira iyo yekupfeka kuramba lining, mahwendefa, mataira, dutu remugero, zvidhinha, zvikamu zvisina kujairika, uye kupfeka & corrosion resistance FGD nozzles, heat exchanger, pombi, machubhu, zvichingodaro.
Nitride Bonded Silicon Carbide (NBSIC, NSIC). Zvigadzirwa zvekutanga ndeyesilicon carbide pamwe nesilicon poda. Iyo yakasvibira compact inodzingirwa mumhepo yenitrogen umo maitiro SiC + 3Si + 2N2 -> SiC + Si3N4 inoitika. Chinhu chekupedzisira chinoratidza shanduko shoma panguva yekugadziriswa. Nyaya yacho inoratidza imwe nhanho yeporosity (kazhinji inenge 20%).
Yakananga Sintered Silicon Carbide (SSIC). Silicon carbide ndiyo yekutanga zvinhu. Densification aids iboron plus kabhoni, uye densification inoitika neiyo solid-state reaction process pamusoro pe2200ºC. Hunhu hwayo hwepamusoro hwekushisa uye kusagadzikana kwekuora kwakakwirira nekuda kwekushaikwa kwechikamu chegirazi chechipiri pamiganhu yezviyo.
Liquid Phase Sintered Silicon Carbide (LSSIC). Silicon carbide ndiyo yekutanga zvinhu. Densification aids iyttrium oxide pamwe nealuminium oxide. Densification inoitika pamusoro pe2100ºC ne-liquid-phase reaction uye inoguma muchikamu chegirazi chechipiri. Iwo emakanika zvivakwa anowanzo kurira kune SSIC, asi iyo yepamusoro-tembiricha zvivakwa uye corrosion kuramba haina kunaka.
Inopisa Yakadzvanywa Silicon Carbide (HPSIC). Silicon carbide poda inoshandiswa seyokutanga mbishi zvinhu. Densification aids inowanzova boron pamwe nekabhoni kana yttrium oxide pamwe nealuminium oxide. Densification inoitika nekushandisa panguva imwe chete ye mechanical pressure uye tembiricha mukati me graphite die cavity. Zvimiro zviri nyore mahwendefa. Zvishoma zvishoma zvekubatsira sintering zvinogona kushandiswa. Mechanical zvimiro zvezvinopisa zvakadzvanywa zvinhu zvinoshandiswa seyokutanga iyo inofananidzwa nemamwe maitiro. Zvivakwa zvemagetsi zvinogona kuchinjwa neshanduko mune densification aids.
CVD Silicon Carbide (CVDSIC). Ichi chinyorwa chinoumbwa nemakemikari vapor deposition (CVD) maitiro anosanganisira maitiro: CH3SiCl3 -> SiC + 3HCl. Kuita kunoitwa pasi pemhepo yeH2 neSiC ichiiswa pane graphite substrate. Iyo nzira inoguma mune yakanyanya kuchena zvinhu; zvisinei, mahwendefa akareruka chete anogona kugadzirwa. Maitiro acho anodhura zvakanyanya nekuda kwekunonoka kuita nguva.
Chemical Vapor Inoumba Silicon Carbide (CVCSiC). Iyi nzira inotanga neine proprietary graphite precursor iyo inogadzirwa kuita padyo-neti zvimiro munzvimbo yegraphite. Maitiro ekushandura anoisa chikamu chegraphite kune in situ vapor solid-state reaction kuti ibudise polycrystalline, stoichiometrically chaiyo SiC. Iyi yakanyatso kudzora maitiro inobvumira dhizaini yakaoma kuti igadzirwe mune yakashandurwa zvachose SiC chikamu chine yakasimba kushivirira maficha uye kuchena kwakanyanya. Kushandura kunopfupisa nguva yakajairika yekugadzira uye kuderedza mutengo pane dzimwe nzira.* Kwakabva (kunze kwekwakacherechedzwa): Ceradyne Inc., Costa Mesa, Calif.
Nguva yekutumira: Jun-16-2018