- ZVAKANAKA ZVOKUITA ABENDED SILICON CARBIDE
Reaction Bonded Silicon Carbide (RBSC, kana SiSiC) zvigadzirwa zvinopa kuomarara kwakanyanya/abrasion kuramba uye kugadzikana kwemakemikari munzvimbo dzine hutsinye. Silicon Carbide chinhu chekugadzira chinoratidza maitiro epamusoro anosanganisira:
lExcellent chemical resistance.
Simba reRBSC rinenge 50% yakakura kupfuura iyo yakawanda nitride yakasungirirwa silicon carbides. RBSC ndiyo yakanakisa corrosion resistance uye antioxidation ceramic.. Inogona kuumbwa kuita akasiyana desulpurization nozzle (FGD) .
lYakanakisa kupfeka uye kukanganisa kupikisa.
Ndiyo yepamusoro pehombe yakakura abrasion inodzivirira ceramic tekinoroji. RBSiC ine kuomarara kwakanyanya kusvika kune iyo yedhaimani. Yakagadzirirwa kushandiswa mumashandisirwo ezvimiro zvakakura uko refractory mamakisi esilicon carbide ari kuratidza kupfeka abrasive kana kukuvadzwa kubva mukukanganisa kwezvimedu zvakakura. Inoshingirira kunanga kupinza kwezvimedu zvemwenje pamwe nekukanganisa uye kutsvedza abrasion yezvinorema zvinorema zvine slurries. Inogona kuumbwa kuita akasiyana maumbirwo, anosanganisira koni nemaoko maumbirwo, pamwe neakaomesesa einjiniya zvimedu zvakagadzirirwa midziyo inobatanidzwa mukugadzirisa zvinhu.
lYakanakisa thermal shock resistance.
Reaction bonded silicon carbide components inopa yakasarudzika yekupisa kuvhunduka asi kusiyana neyakajairwa ceramics, iwo zvakare anosanganisa yakaderera density nesimba rakakura remuchina.
lSimba guru (rinowana simba pakupisa).
Reaction bonded Silicon carbide inochengetedza simba rayo remuchina pane tembiricha dzakakwirira uye ichiratidza mazinga akaderera ezvinokambaira, zvichiita kuti ive sarudzo yekutanga yekutakura mitoro maapplication ari pakati pe1300ºC kusvika 1650ºC (2400ºC kusvika 3000ºF).
- Technical Data-pepa
| Technical Datasheet | Unit | SiSiC (RBSiC) | NbSiC | ReSiC | Sintered SiC |
| Reaction Bonded Silicon Carbide | Nitride Bonded Silicon Carbide | Recrystallized Silicon Carbide | Sintered Silicon Carbide | ||
| Bulk density | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2.75 | 2.8 |
| SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Vhura Porosity | (%) | <0.5 | 10~12 | 15-18 | 7~8 |
| Kupeta simba | Mpa / 20 ℃ | 250 | 160~180 | 80-100 | 500 |
| Mpa / 1200 ℃ | 280 | 170~180 | 90-110 | 550 | |
| Modulus ye elasticity | GPA / 20 ℃ | 330 | 580 | 300 | 200 |
| GPA / 1200 ℃ | 300 | ~ | ~ | ~ | |
| Thermal conductivity | W/(m*k) | 45 (1200℃) | 19.6 (1200℃) | 36.6 (1200℃) | 13.5~14.5 (1000℃) |
| Kukwana kwekuwedzera kwekupisa | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Mons 'kuoma chiyero (Rigidity) | 9.5 | ~ | ~ | ~ | |
| Max-kushanda tembiricha | ℃ | 1380 | 1450 | 1620 (oxid) | 1300 |
- Indasitiri NyayaNezve Reaction Bonded Silicon Carbide:
Power Generation, Mining, Chemical, Petrochemical, Kiln, Machinery kugadzira indasitiri, Minerals & Metallurgy uye zvichingodaro.
Nekudaro, kusiyana nesimbi uye alloys adzo, hapana yakamisikidzwa indasitiri maitiro ekuita kwesilicon carbide. Iine huwandu hwakasiyana hwekuumbwa, densities, hunyanzvi hwekugadzira uye ruzivo rwekambani, silicon carbide zvikamu zvinogona kusiyanisa zvakanyanya mukuenderana, pamwe nemichina uye makemikari zvinhu. Sarudzo yako yemutengesi inotaridza mwero uye kunaka kwezvinhu zvaunogamuchira.