- TULAGA O LE REACTION BONDED SILICON CARBIDE
Reaction Bonded Silicon Carbide (RBSC, poʻo SiSiC) oloa e ofoina atu le maaa tele / faʻafefeteina ma le mataʻina o vailaʻau mautu i siosiomaga faʻafefe. Silicon Carbide o se mea gaosia e faʻaalia ai uiga maualuga faʻatinoga e aofia ai:
lFa'agata fa'ama'i sili.
O le malosi o le RBSC e toetoe lava 50% sili atu nai lo le tele o nitride faʻapipiʻi silikon carbide. RBSC o le corrosion sili ona lelei tetee ma antioxidation ceramic.. E mafai ona faia i se ituaiga o desulpurization nozzle (FGD) .
lLa'ei lelei ma tete'e a'afiaga.
O le tumutumu o tekinolosi sima e tetee atu i le abrasion. RBSiC e maualuga le maaa e latalata i taimane. Fuafuaina mo le fa'aoga i talosaga mo foliga lapopo'a o lo'o fa'aalia ai le fa'alavalava o le kasa silicon carbide o lo'o fa'aalia ai le ofuina po'o le fa'aleagaina ona o a'afiaga o ni vaega tetele. Tete'e i le tu'i sa'o o fasimea mama fa'apea le a'afiaga ma fa'ase'e abrasion o mea mamafa mamafa o lo'o i ai slurries. E mafai ona fausia i ni foliga eseese, e aofia ai foliga cone ma lima, faʻapea foʻi ma vaega faʻainisinia sili atu ona lavelave fuafuaina mo meafaigaluega e aofia ai i le gaosiga o mea mataʻutia.
lLelei le tete'i te'i vevela.
O vaega o le kasa silicon carbide tali e maua ai le malosi o le te'i vevela ae le pei o sima masani, latou te tuʻufaʻatasia foi le maualalo ma le malosi faʻainisinia maualuga.
lMalosi maualuga (maua le malosi i le vevela).
O le tali atu o le Silicon carbide e taofia le tele o lona malosi faʻainisinia i le maualuga o le vevela ma faʻaalia ai le maualalo o le maualuga o le fetolofi, ma avea ai ma filifiliga muamua mo le faʻaaogaina o uta i le va o le 1300ºC i le 1650ºC (2400ºC i le 3000ºF).
- Pepa Fa'amatalaga Fa'atekinisi
| Pepa Fa'amatalaga Fa'atekinisi | Vaega | SiSiC (RBSiC) | NbSiC | RESIC | Sintered SiC |
| Reaction Bonded Silicon Carbide | Nitride Bonded Silicon Carbide | Silicon Carbide ua toe fa'akristal | Sintered Silicon Carbide | ||
| Fa'atosina tele | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2.75 | 2.8 |
| SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Tatala Porosity | (%) | <0.5 | 10–12 | 15-18 | 7~8 |
| Malosi punou | Mpa / 20℃ | 250 | 160~180 | 80-100 | 500 |
| Mpa / 1200℃ | 280 | 170~180 | 90-110 | 550 | |
| Modulus o elasticity | Gpa / 20 ℃ | 330 | 580 | 300 | 200 |
| Gpa / 1200 ℃ | 300 | ~ | ~ | ~ | |
| Fa'avevela vevela | W/(m*k) | 45 (1200 ℃) | 19.6 (1200℃) | 36.6 (1200 ℃) | 13.5~14.5 (1000 ℃) |
| Faigofie le fa'alauteleina o le vevela | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Fua maaa o Mons (Ma'a'a) | 9.5 | ~ | ~ | ~ | |
| Max-galue temparature | ℃ | 1380 | 1450 | 1620 (oxid) | 1300 |
- Alamanuia mataupuMo Reaction Bonded Silicon Carbide:
Malosiaga, Mining, Chemical, Petrochemical, Kiln, Alamanuia gaosi masini, Minerale & Metallurgy ma isi.
Ae ui i lea, e le pei o metala ma a latou u'amea, e leai ni fa'ata'ita'iga fa'ata'ita'iga fa'atinoga o alamanuia mo le silicon carbide. Faatasi ai ma le tele o ituaiga o fatuga, densities, gaosiga o auala ma le poto masani a le kamupani, o vaega carbide silicon e mafai ona matua ese lava i le tutusa, faʻapea foʻi ma mea faʻainisinia ma vailaʻau. O lau filifiliga o le fa'atau oloa e fuafua ai le maualuga ma le lelei o mea e te mauaina.