SiC substrate ya CVD ya firime

Ububiko bwa Shimi

Umwuka wimyuka ya chimique (CVD) ni inzira yo gukura kumurongo aho gaze ibanziriza ishyira firime yoroheje kuri wafer muri reaction. Inzira yo gukura ni ubushyuhe buke kandi ifite umuvuduko mwinshi cyane ugereranijeAmashanyarazi. Itanga kandi ibice byinshi byoroshye bya silicon dioxyde kuko firime yoherejwe, aho gukura. Iyi nzira ikora firime ifite ingufu nyinshi zamashanyarazi, ninziza cyane gukoreshwa mubikoresho bya IC na MEMS, mubindi bikorwa byinshi.

Imyuka ya chimique (CVD) oxyde ikorwa mugihe hakenewe urwego rwo hanze ariko insimburangingo ya silicon ntishobora kuba okiside.

Ubwiyongere bw'imyuka ya chimique:

Gukura kwa CVD bibaho mugihe gaze cyangwa imyuka (precursor) byinjijwe mumashanyarazi make aho wafers itunganijwe haba mu buryo buhagaritse cyangwa butambitse. Gazi inyura muri sisitemu kandi ikwirakwiza neza hejuru ya wafer. Mugihe ibyo bibanziriza bigenda byinjira muri reaktor, wafer itangira kubikurura hejuru yabyo.

Iyo abibanjirije bamaze gukwirakwiza muri sisitemu, reaction yimiti itangira hejuru yubutaka. Iyi miti yimiti itangira nkibirwa, kandi uko inzira ikomeza, ibirwa birakura kandi bigahuza gukora firime yifuzwa. Imiti yimiti itera biproducts hejuru ya wafers, ikwirakwira hejuru yumupaka kandi igasohoka muri reaction, hasigara gusa wafer hamwe na firime yabitswe.

Igishushanyo 1

Inyungu zo Kubika Imyuka Yumuti:

• Iterambere ry'ubushyuhe buke.
• Igipimo cyo kubitsa vuba (cyane cyane APCVD).
• Ntabwo bigomba kuba substrate ya silicon.
• Intambwe nziza yo gukwirakwiza (cyane cyane PECVD).

Igishushanyo 2
Silicon dioxyde yoherejwe no gukura

Kubindi bisobanuro kubijyanye no kubika imyuka ya chimique cyangwa gusaba ibisobanuro, nyamunekaSHAKA SVMuyumunsi kuvugana numunyamuryango witsinda ryacu ryo kugurisha.

Ubwoko bwa CVD

LPCVD

Umuvuduko ukabije wimyuka ya myuka ni uburyo busanzwe bwo gutumura imyuka ya chimique nta gahato. Itandukaniro nyamukuru hagati ya LPCVD nubundi buryo bwa CVD nubushyuhe bwo kubika. LPCVD ikoresha ubushyuhe bwo hejuru kugirango ibike firime, mubisanzwe hejuru ya 600 ° C.

Ibidukikije byumuvuduko muke bikora firime imwe cyane ifite isuku ryinshi, imyororokere, hamwe nuburinganire. Ibi bikorwa hagati ya 10 - 1.000 Pa, mugihe umuvuduko wicyumba usanzwe ari 101.325 Pa.Ubushyuhe bugena ubunini nubuziranenge bwiyi firime, hamwe nubushyuhe bwinshi butera firime nini kandi nziza.

• Filime zisanzwe zabitswe:polysilicon, ikoporora & idafunguye,nitride.

PECVD

Plasma yazamuye imyuka ya chimique nubushyuhe buke, tekinike yo hejuru ya firime. PECVD ibera mumashanyarazi ya CVD hiyongereyeho plasma, ni gaze ioni igice hamwe na electron nyinshi yubusa (~ 50%). Ubu ni uburyo bwo kubika ubushyuhe buke buba hagati ya 100 ° C - 400 ° C. PECVD irashobora gukorwa mubushyuhe buke kuko ingufu zituruka kuri electron yubusa zitandukanya imyuka ikora kugirango ikore firime hejuru ya wafer.

Ubu buryo bwo kubitsa bukoresha ubwoko bubiri bwa plasma:

1. Ubukonje (butari ubushuhe): electron zifite ubushyuhe burenze ibice bitagira aho bibogamiye na ion. Ubu buryo bukoresha ingufu za electron muguhindura umuvuduko mubyumba byabitswe.
2. Ubushyuhe: electron nubushyuhe bumwe nkibice na ion mucyumba cyo kubitsa.

Imbere mucyumba cyo kubitsa, voltage-radiyo yoherejwe hagati ya electrode hejuru no munsi ya wafer. Ibi byishyuza electron kandi bikabika muburyo bushimishije kugirango ubike firime wifuza.

Hano hari intambwe enye zo gukura film ukoresheje PECVD:

1. Shira intego wafer kuri electrode imbere mucyumba cyo kubitsa.
2. Kumenyekanisha imyuka yimyuka nibintu byoherejwe mubyumba.
3. Ohereza plasma hagati ya electrode hanyuma ushyire voltage kugirango ushimishe plasma.
4. Gazi ikora itandukana kandi ikora hamwe nubuso bwa wafer kugirango ikore firime yoroheje, byproducts ikwirakwira hanze.

• Filime zisanzwe zabitswe: okiside ya silicon, nitride ya silicon, amorphous silicon,silicon oxynitrides (Si_xO_yN_z).

APCVD

Umuvuduko ukabije wa Atmospheric chimique de pompe nubuhanga bwo kubika ubushyuhe buke bubera mu itanura kumuvuduko ukabije wikirere. Kimwe nubundi buryo bwa CVD, APCVD isaba gaze ibanziriza icyumba cyo kubitsa, hanyuma ubushyuhe bukazamuka buhoro buhoro kugirango bigabanye reaction hejuru ya wafer hanyuma ubike firime yoroheje. Bitewe n'ubworoherane bw'ubu buryo, bufite igipimo cyo hejuru cyane.

• Filime zisanzwe zabitswe: okiside ya silicon idakuwe, nitride ya silicon. Byakoreshejwe kandiannealing.

HDP CVD

Ububiko bwinshi bwa plasma chimique vapor ni verisiyo ya PECVD ikoresha plasma yubucucike bwinshi, ituma wafers ikora nubushyuhe buke (hagati ya 80 ° C-150 ° C) mubyumba byabitswe. Ibi kandi birema firime ifite ubushobozi bukomeye bwo kuziba.

• Filime zisanzwe zabitswe: dioxyde ya silicon (SiO₂), nitride ya silicon (Si₃N₄),silicon karbide (SiC).

SACVD

Umuvuduko wa Subatmospheric chimique imyuka itandukanye nubundi buryo kuko ibera munsi yumuvuduko wicyumba gisanzwe kandi ikoresha ozone (O₃) gufasha gufasha guhagarika reaction. Igikorwa cyo kubitsa kibera kumuvuduko mwinshi kurenza LPCVD ariko munsi ya APCVD, hagati ya 13.300 Pa na 80.000 Pa.SACVD ya firime ifite umuvuduko mwinshi kandi igenda itera imbere uko ubushyuhe bwiyongera kugeza kuri 490 ° C, nibwo butangira kugabanuka.

• Filime zisanzwe zabitswe:BPSG, PSG,TEOS.

Shandong Zhongpeng Special Ceramics Co., Ltd nimwe mubisubizo binini bya silicon karbide ceramic ibisubizo bishya mubushinwa. Ceramic tekinike ya SiC: Gukomera kwa Moh ni 9 (Gukomera kwa Moh ni 13), hamwe no kurwanya isuri no kwangirika, kwangirika kwiza - kurwanya no kurwanya okiside. Ubuzima bwa serivisi ya SiC ni inshuro 4 kugeza kuri 5 kurenza 92% bya alumina. MOR ya RBSiC yikubye inshuro 5 kugeza kuri 7 za SNBSC, irashobora gukoreshwa muburyo bukomeye. Igikorwa cyo gusubiramo cyihuta, gutanga ni nkuko byasezeranijwe kandi ubuziranenge ni ubwa kabiri kuri kimwe. Buri gihe dukomeza gutsimbarara ku ntego zacu no gusubiza imitima yacu muri sosiyete.