Sic Substrate ya CVD Film

Kubika imiti

Kubika imiti (CVD) Inzira yo gukura ni ubushyuhe buke kandi ifite urugero rwiyongera cyane iyo ugereranijeUbushyuhe. Itanga kandi ibice byinshi bya Silicon dioxyde kuko iyi filime yabitswe, aho guhinga. Iyi nzira itanga film ifite amashanyarazi menshi, nibyiza gukoreshwa muri ics nibikoresho bya mems, mubindi bikorwa byinshi.

Kubitsa imiti (CVD) bikozwe mugihe hakenewe urwego rwo hanze ariko hashobora kutabona icyemezo cya silicon ntigishobora kugirirwamo.

Imiti yo Kwinjiza Imiti:

Gukura CVD bibaho iyo gaze cyangwa imyuka (precursor) yatangijwe mubushyuhe buke butunganijwe aho warateguwe aho wateguye cyangwa utambitse. Gazi igenda muri sisitemu kandi irakwirakwiza iruhande rwa wafer. Nkuko aba bababanjirije banyuze muri reaction, wafer batangira kubikuramo hejuru.

Abanza usaba kugabanura neza muri sisitemu, imiti itangirira ku isi. Ibi bitekerezo byimiti bitangira nkuko birwa, kandi uko inzira ikomeje, ibirwa bikura kandi bihuza kugirango ukore film yifuzwa. Ibisubizo byimiti bikora ibicuruzwa hejuru ya wafers, ikwirakwiza hakurya yimipaka hanyuma ikava muri reaction, igasigara gusa indege hamwe na firime yabitswe.

Igishushanyo 1

Inyungu zo Kugereranya Imiti:

• Inzira yo gukura mu bushyuhe.
• Igipimo cyihuse cyo kubitsa (cyane cyane apcvd).
• Ntabwo igomba kuba umutwe wa silicon.
• Intambwe nziza (cyane cyane Pecvd).

Igishushanyo 2
Dioxyde delicon Dioxides Vs. Gukura

Kubindi bisobanuro kubijyanye na chique vapor cyangwa gusaba amagambo, nyamunekaMenyesha SVMUyu munsi kuvugana numunyamuryango witsinda ryacu ryo kugurisha.

Ubwoko bwa CVD

Lpcod

Umuvuduko ukabije wa chique vapor ni inzira isanzwe ya chique idafite imyuka idafite umukiriya. Itandukaniro rikomeye hagati ya LPCVD nuburyo bwa CVD ni ubushyuhe bwo kubitsa. LPCVD ikoresha ubushyuhe bwo hejuru kuri firime, mubisanzwe hejuru ya 600 ° C.

Ibidukikije byo hasi-ibidukikije bitera firime imwe cyane hamwe no kweza cyane, kubyara, no gukinisha. Ibi bikozwe hagati ya 10 - 1.000 pa, mugihe igitutu cyicyumba gisanzwe ni 101.325 P. Ubushyuhe bugena ubugari nubuziranenge bwiyi firime, hamwe nubushyuhe bwo hejuru buturuka kuri firime na firime nziza.

• Filime zisanzwe zashyizwe:Polysilicon, icyapa & kurwara oxide,nitrides.

Pecvd

Plasma yazamuye ibihuha imyuka ni ubushyuhe buke, tekinike yo hejuru ya firime. Pecvd ibera muri CVD reaction hamwe no kongeramo Plasma, ni gaze ya ionised igice hamwe ninkuta ndende ya electron (~ 50%). Ubu ni uburyo bwo kubitsa ubushyuhe buke bubaho hagati ya 100 ° C - 400 ° C. Pecvd irashobora gukorerwa ubushyuhe buke kuko ingufu ziva kuri electron yubusa zitandukanya imyuka ishakisha kugirango ikore film kumurongo waraze.

Ubu buryo bwo kubitsa bukoresha ubwoko bubiri butandukanye bwa plasma:

1. Ubukonje (butari thermal): electron ifite ubushyuhe bwo hejuru kuruta ibice bitabogamiye na ont. Ubu buryo bukoresha imbaraga za electrons muguhindura igitutu mucyumba cyo kubitsa.
2. Ubushyuhe: Electrons nubushyuhe bumwe nkibice na onte mumutwe wo kubitsa.

Imbere mucyumba cyo kubitsa, voltage ya radiyo-inshuro yoherejwe hagati ya electrode hejuru no munsi ya wafer. Ibi bishyuza electron kandi bikagumane muburyo bushimishije kugirango ubikemo firime wifuza.

Hano hari intambwe enye zo gukura firime ukoresheje pecvd:

1. Shyira Tafer Wafer kuri electrode imbere yurugereko rwo kubitsa.
2. Kumenyekanisha imyuka yo gushakisha no kubitsa mu Rugereko.
3. Ohereza Plasma hagati ya electrode hanyuma ushyire mu gahinda kugirango ushimishe plasma.
4. Gazi ya gaze itandukana kandi igatwara hejuru kugirango ikore film yoroheje, yanze ibicuruzwa bitandukanye mu cyumba.

• Filime zisanzwe zabitswe: Oxides, Silicon Nitride, Amorhous Silicon,silicon oxynitrides (si_xO_yN_z).

Apcvd

Umuvuduko wikirere uhinduranya imiti ni tekinike nkeya yo kubitsa bibera mu itanura ku muvuduko usanzwe. Kimwe nuburyo bundi buryo, Apcvd bisaba gaze yibanze mucyumba cyo kubitsa, noneho ubushyuhe burazamuka buhoro buhoro kugaruka ku buso bwa feri hanyuma ubikemo firime yoroheje. Kubera ubwo buryo bworoshye bwubu buryo, ifite igipimo cyo hejuru cyane.

• Filime zisanzwe zabitswe: Icyiciro kandi kidasiba oxide ya silicon, nitride ya silicon. Nanone ikoreshwa murigukomera.

HDP CVD

Ubucucike bwikibaya cya Plasma Vapotion ni verisiyo ya Pecvd ikoresha ubucucike bwisumbuye, butuma wafers yitwara hamwe nubushyuhe bwo hasi (hagati ya 80 ° C) mu cyumba cyo kubitsa. Ibi kandi bitera firime hamwe nubushobozi bukomeye bwuzuye.

• Filime zisanzwe zabitswe: Silicon Dioxyde (Sio₂), Silicon Nitride (Si₃N₄,silicon carbide (sic).

Sacvd

Umuvuduko wa Sdatmosmospic Dipotion Kugereranya Kubitsa Biratandukanye nuburyo busanzwe₃) Gufasha Catalyze reaction. Inzira yo kubitsa ibaho kumuvuduko mwinshi kuruta LPCVD ariko munsi ya Appcvd, hagati ya Appcvd, hagati ya 6.300 PA na firime.

• Filime zisanzwe zashyizwe:BPSG, PSG,Teos.

Shandong Zhongpeng Ceramic idasanzwe Coramics Co, Ltd ni imwe mu miseno nini ya silicon ceramic ibisubizo bishya mu Bushinwa. Ubuhanga bwa Teramic teramic: Hakomeye ya MoH ni 9 (Hardness Nshya ya MoH ni 13), irwanganwa ryiza cyane ku isuri no kugaburira neza, Aburamu no kurwanya indashyikirwa. Ubuzima bwa Serivisi ya Sic ni inshuro 4 kugeza kuri 5 kurenza 92% ya alumina. Mor ya RBICIC ni inshuro 5 kugeza 7 kuri snbsc, irashobora gukoreshwa muburyo bugoye. Inzira yo gutanganwa yihuta, itangwa ni nkuko byasezeranijwe kandi ubuziranenge ni icya kabiri kuri ntanumwe. Buri gihe dukomeza guhangana intego zacu no guha imitima yacu kumuryango.