Amagambo akunze guhuzwa na Silicon Carbide Gutunganya

Carbide ya Silicon yongeye gushyirwaho (RXSIC, ReSIC, RSIC, R-SIC). Gutangira ibikoresho bibisi ni silicon karbide. Nta mfashanyigisho ikoreshwa. Icyatsi kibisi gishyuha hejuru ya 2200ºC kugirango gihuze. Ibikoresho bivamo bifite hafi 25% porosity, igabanya imiterere yubukanishi; ariko, ibikoresho birashobora kuba byera cyane. Inzira nubukungu.
Imyitwarire ya Silicon Carbide (RBSIC). Gutangira ibikoresho bibisi ni silicon karbide wongeyeho karubone. Icyatsi kibisi noneho cyinjizwemo na silicon yashongeshejwe hejuru ya 1450ºC hamwe nigisubizo: SiC + C + Si -> SiC. Microstructure muri rusange ifite umubare munini wa silikoni irenze, igabanya imiterere yubushyuhe bwo hejuru hamwe no kurwanya ruswa. Impinduka ntoya ibaho mugihe cyibikorwa; icyakora, igice cya silicon gikunze kugaragara hejuru yicyiciro cyanyuma. ZPC RBSiC yemejwe nubuhanga buhanitse, butanga umurongo urwanya kwambara, amasahani, amabati, umurongo wa cyclone, bloks, ibice bidasanzwe, hamwe no kwambara & ruswa birwanya FGD nozzles, guhinduranya ubushyuhe, imiyoboro, imiyoboro, nibindi.

Nitride Bonded Silicon Carbide (NBSIC, NSIC). Ibikoresho bitangiye ni silicon karbide wongeyeho ifu ya silicon. Icyatsi kibisi kirasa mukirere cya azote aho reaction ya SiC + 3Si + 2N2 -> SiC + Si3N4. Ibikoresho byanyuma byerekana impinduka zingana mugihe cyo gutunganya. Ibikoresho byerekana urwego runaka (mubyukuri hafi 20%).

Carbide ya Silicon itaziguye (SSIC). Silicon karbide nintangiriro yibikoresho. Imfashanyo ya Densification ni boron hiyongereyeho karubone, kandi densification ibaho muburyo bukomeye bwo kwitwara hejuru ya 2200ºC. Imiterere ya hightemperature hamwe no kurwanya ruswa irarenze kubera kubura icyiciro cya kabiri cyikirahure kumupaka wingano.

Icyiciro cyamazi Yacumuye Carbide ya Silicon (LSSIC). Silicon karbide nintangiriro yibikoresho. Imfashanyigisho ni yttrium oxyde wongeyeho aluminium oxyde. Densification ibaho hejuru ya 2100ºC na reaction ya feri-reaction hanyuma bikavamo ikirahuri cya kabiri. Imiterere yubukanishi isumba SSIC, ariko imiterere yubushyuhe bwo hejuru hamwe no kurwanya ruswa ntabwo ari nziza.

Carbide Yashyushye Ashyushye (HPSIC). Ifu ya karibide ya silicon ikoreshwa nkibikoresho bitangira. Imfashanyo ya Densification muri rusange ni boron wongeyeho karubone cyangwa yttrium oxyde wongeyeho aluminium oxyde. Densification ibaho icyarimwe ikoreshwa ryumuvuduko wubushyuhe nubushyuhe imbere muri grafite ipfa. Imiterere ni amasahani yoroshye. Umubare muto wibikoresho byo gucumura urashobora gukoreshwa. Imiterere ya mashini yibikoresho bishyushye bikoreshwa nkibanze ugereranije nibindi bikorwa. Ibikoresho byamashanyarazi birashobora guhinduka nimpinduka zifasha densification.

CVD Silicon Carbide (CVDSIC). Ibi bikoresho byakozwe nuburyo bwo kubika imyuka (CVD) irimo reaction: CH3SiCl3 -> SiC + 3HCl. Igisubizo gikorerwa munsi yikirere H2 hamwe na SiC ishyirwa kuri substrate ya grafite. Inzira itanga ibintu byinshi-byera cyane; icyakora, gusa amasahani yoroshye arashobora gukorwa. Inzira irazimvye cyane kubera ibihe byo kwitwara buhoro.

Imyuka ya chimique ikora Silicon Carbide (CVCSiC). Iyi nzira itangirana na progaramu ya grafite yihariye ibanza gushushanywa hafi-net ishusho muburyo bwa grafite. Uburyo bwo guhindura ibintu bishushanya igice cya grafite kumurongo wumuyaga ukomeye-reaction kugirango itange polycrystalline, stoichiometrically ikosora SiC. Ubu buryo bugenzurwa cyane butuma ibishushanyo bigoye kubyara mubice bya SiC byahinduwe rwose bifite imiterere yo kwihanganira cyane kandi bifite isuku ryinshi. Inzira yo guhindura igabanya igihe gisanzwe cyo gukora kandi igabanya ibiciro kurenza ubundi buryo. * Inkomoko (usibye aho byavuzwe): Ceradyne Inc., Costa Mesa, Calif.


Igihe cyo kohereza: Jun-16-2018
Ikiganiro cya WhatsApp Kumurongo!