Ibyerekeranye na Silicon Carbide na SiC ceramics

Silicon Carbide ifite imbaraga zo kurwanya ruswa, imbaraga za mashini nyinshi, ubushyuhe bwinshi bwumuriro, coefficente nkeya cyane yo kwagura amashyuza, hamwe no guhangana nubushyuhe bukabije kuruta alumincell namet ubushyuhe bwinshi cyane. Carbide ya silicon igizwe na tetrahedra ya atome ya karubone na silikoni ifitanye isano ikomeye muri kasitori. Ibi bitanga ibintu bikomeye kandi bikomeye. Carbide ya silicon ntabwo yibasiwe na acide cyangwa alkalis cyangwa umunyu ushongeshejwe kugeza kuri 800ºC. Mu kirere, SiC ikora okiside irinda silikoni irinda 1200ºC kandi irashobora gukoreshwa kugeza kuri 1600ºC. Ubushyuhe bwo hejuru bwumuriro bujyanye no kwaguka kwinshi nubushyuhe bwinshi butanga ibi bintu bidasanzwe biranga ubushyuhe bwumuriro. Silicon carbide ceramics ifite umwanda muto cyangwa udafite imipaka igabanya imbaraga zigumana imbaraga zubushyuhe bwo hejuru cyane, zegereye 1600ºC nta gutakaza imbaraga. Isuku yimiti, kurwanya ibitero byimiti kubushyuhe, hamwe no kugumana imbaraga mubushyuhe bwinshi byatumye ibi bikoresho bikundwa cyane kuko wafer tray ifasha hamwe na padi mu itanura rya semiconductor. Thcell namelectrical conduction yibikoresho byatumye ikoreshwa muburyo bwo gushyushya ibintu mu ziko ry’amashanyarazi, kandi nkigice cyingenzi muri thermistors (ubushyuhe bwimihindagurikire yubushyuhe) no muri varistors (voltage variable resistance). Izindi porogaramu zirimo kashe ya kashe, kwambara amasahani, ibyuma hamwe nigituba.