- Ibyiza byo Kubya reaction Boacted Silicon Carbide
Ibisubizo byahujwe na silicon, cyangwa ssic) Ibicuruzwa bitanga imbaraga zikomeye / kwikuramo kwimenyekanisha hamwe nubushyuhe buhebuje hamwe nubukungu bwimiti mubidukikije. Silicon Carbide ni ibintu bya sintetike byerekana imiterere yimikorere yo hejuru harimo:
lKurwanya imiti myiza.
Imbaraga za RBSC hafi 50% kurenza iya Nitride nyinshi zifata silicon karbide ya silicon. RBSC nicyo kirwanya ruswa hamwe na Antioxipation Ceramic .. irashobora gushingwa muburyo butandukanye bwa Nozzle (FGD).
lKwambara neza no kurwanya ingaruka.
Ni impengane y'ikigereranyo kinini cyo kwihanganira teramic ceramic. RBIC ifite imbaraga nyinshi zegera kuri diyama. Yagenewe gukoreshwa muburyo bunini aho amanota yo gutunganya imirongo ya Silicon agaragaza kwambara cyangwa kwangiza kwambara cyangwa kwangirika kwingaruka zibice binini. Kwirwanya gutandukanya ibice byumucyo kimwe ningaruka no kunyerera kubisobanura biremereye ibisebe birimo gucibwa. Irashobora gushingwa muburyo butandukanye, harimo imiterere ya cone na sleve, kimwe nibice bigoye byateguwe kubikoresho bigira uruhare mugutunganya ibikoresho fatizo.
lKurwanya ibara ryiza.
Ibisubizo byahujwe na silicon Carbide bitanga icyubahiro cyijimye cyane
lImbaraga nyinshi (zinguka imbaraga ku bushyuhe).
Gusubiramo Carbide ya Silicon biguma imbaraga nyinshi zubukanishi ku bushyuhe bwo hejuru kandi bikagaragaza neza ibyifuzo byinshi bya creep, bikagumaho bwa mbere ibyifuzo byo gutwara imitwaro hagati ya 1650ºC).
- Tekinike ya tekinike-urupapuro
| Ububiko bwa Tekinike | Igice | Sisic (RBIC) | Nbbic | Gucika | Sic |
| Reaction yahujwe silicon carbide | Nitride yahujwe silicon karbide | Ongera usubiremo karbide ya silicon | Karbide ya Silicon | ||
| Ubucucike bwinshi | (g.cm3) | 3.02 | 2.75-2.85 | 2.65 ~ 2.75 | 2.8 |
| Sic | (%) | 83.66 | 75 | 99 | 90 |
| Si3n4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Fungura porosity | (%) | <0.5 | 10 ~ 12 | 15-18 | 7 ~ 8 |
| Kunama imbaraga | MPA / 20 ℃ | 250 | 160 ~ 180 | 80-100 | 500 |
| MPA / 1200 ℃ | 280 | 170 ~ 180 | 90-110 | 550 | |
| Modulus ya Elastique | GPA / 20 ℃ | 330 | 580 | 300 | 200 |
| GPA / 1200 ℃ | 300 | ~ | ~ | ~ | |
| Ubushyuhe | W / (m * k) | 45 (1200 ℃) | 19.6 (1200 ℃) | 36.6 (1200 ℃) | 13.5 ~.5 (1000 ℃) |
| Kugereranya no kwaguka | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Igipimo gikomeye cya Mons (Rigidity) | 9.5 | ~ | ~ | ~ | |
| Tempash | ℃ | 1380 | 1450 | 1620 (OXID) | 1300 |
- UrubanzaKugirango reaction yahujwe silicon carbide:
Imbaraga zamashanyarazi, ubucukuzi bwamabuye, amabuye, petrochemike, kiln, inganda zifata imashini, amabuye y'agaciro & metallurgy nibindi.
Ariko, bitandukanye na braals hamwe nibikoresho byabo, nta bipimo ngenderwaho byinganda zinganda za silicon carbide. Hamwe nubuhanga butandukanye, ubucucike, tekinike yo gukora hamwe nubunararibonye bwa sosiyete, ibice bya silicon birashobora gutandukana muburyo bukomeye muburyo buhoraho, kimwe na Mechanical hamwe na Mechanical. Guhitamo kwawe gutanga urwego nubwiza bwibikoresho wakiriye.