SiC gawo lapansi la zokutira filimu ya CVD

Chemical Vapor Deposition

Chemical vapor deposition (CVD) oxide ndi njira yokulirapo pomwe mpweya wolowera kutsogolo umayika filimu yopyapyala pa chowotcha mu riyakitala. Njira ya kukula ndi kutentha kochepa ndipo imakhala ndi kukula kwakukulu poyerekeza ndithermal oxide. Imapanganso zigawo zowonda kwambiri za silicon dioxide chifukwa filimuyo imachotsedwa, osati kukula. Njirayi imapanga filimu yokhala ndi mphamvu zambiri zamagetsi, zomwe zimakhala zabwino kuti zigwiritsidwe ntchito mu zipangizo za ICs ndi MEMS, pakati pa mapulogalamu ena ambiri.

Chemical vapor deposition (CVD) oxide imachitidwa ngati wosanjikiza wakunja ukufunika koma gawo lapansi la silicon silingathe kukhala oxidized.

Kukula kwa Chemical Vapor Deposition:

Kukula kwa CVD kumachitika pamene mpweya kapena nthunzi (precursor) imalowetsedwa mu chotenthetsera chochepa cha kutentha komwe ma wafer amakonzedwa molunjika kapena mopingasa. Mpweya umadutsa mu dongosolo ndikugawa mofanana pamwamba pa zowomba. Pamene zoyambira izi zikuyenda kudzera mu riyakitala, zopyapyalazo zimayamba kuzitengera pamwamba pawo.

Ma precursors akagawanika mofanana mu dongosolo lonse, zochitika za mankhwala zimayambira pamwamba pa magawo. Mankhwalawa amayamba ngati zilumba, ndipo pamene ndondomekoyi ikupitirira, zilumbazi zimakula ndikuphatikizana kuti zipange filimu yomwe akufuna. Zophatikizika zamakemikolo zimapanga ma biproducts pamwamba pa zopyapyala, zomwe zimafalikira m'malire osanjikiza ndikutuluka kuchokera mu riyakitala, ndikusiya zopyapyala zokha ndi zokutira zawo zamakanema.

Chithunzi 1

Ubwino wa Chemical Vapor Deposition:

• Kutentha kochepa kukula ndondomeko.
• Kuthamanga kwachangu (makamaka APCVD).
• Sikuyenera kukhala gawo lapansi la silicon.
• Kufalikira kwamayendedwe abwino (makamaka PECVD).

Chithunzi 2
Kuyika kwa silicon dioxide motsutsana ndi kukula

Kuti mumve zambiri pakuyika kwa nthunzi wamankhwala kapena kufunsa mtengo, chondeONANI SVMlero kuti tilankhule ndi membala wa gulu lathu lazogulitsa.

Mitundu ya CVD

Chithunzi cha LCVD

Low pressure chemical vapor deposition ndi njira yokhazikika yoyika nthunzi wamankhwala popanda kukakamiza. Kusiyana kwakukulu pakati pa LPCVD ndi njira zina za CVD ndi kutentha kwa malo. LPCVD imagwiritsa ntchito kutentha kwambiri kuyika mafilimu, nthawi zambiri kuposa 600 ° C.

Chilengedwe chochepa chochepa chimapanga filimu yofanana kwambiri yokhala ndi chiyero chapamwamba, kuberekana, ndi homogeneity. Izi zimachitika pakati pa 10 - 1,000 Pa, pamene kupanikizika kwa chipinda chokhazikika ndi 101,325 Pa. Kutentha kumatsimikizira makulidwe ndi chiyero cha mafilimuwa, ndi kutentha kwapamwamba kumabweretsa mafilimu ochuluka komanso oyera.

• Mafilimu odziwika omwe amasungidwa:polysilicon, doped & undoped oxides,nitrides.

Mtengo wa PECVD

Kuyika kwa nthunzi yamankhwala mu plasma ndi njira yotsika kwambiri, yotsika kwambiri ya mafilimu. PECVD imachitika mu CVD riyakitala ndi kuwonjezera plasma, amene pang'ono ionized mpweya ndi mkulu ufulu elekitironi okhutira (~ 50%). Iyi ndi njira yochepetsera kutentha yomwe imachitika pakati pa 100 ° C - 400 ° C. PECVD ikhoza kuchitidwa pa kutentha kochepa chifukwa mphamvu yochokera ku ma elekitironi aulere imalekanitsa mipweya yowonongeka kuti ipange filimu pamtunda.

Njira yoyikayi imagwiritsa ntchito mitundu iwiri ya plasma:

1. Ozizira (osakhala otentha): ma elekitironi amakhala ndi kutentha kwakukulu kuposa tinthu tating'onoting'ono ndi ayoni. Njirayi imagwiritsa ntchito mphamvu ya ma elekitironi posintha kukakamiza mu chipinda choyikamo.
2. Kutentha: Ma electron ndi kutentha komweko monga tinthu tating'onoting'ono ndi ayoni m'chipinda choyikamo.

M'kati mwa chipinda choyikamo, mphamvu yamagetsi ya radio-frequency imatumizidwa pakati pa maelekitirodi pamwamba ndi pansi pa wafer. Izi zimalipira ma elekitironi ndikuwasunga pamalo osangalatsa kuti asungire filimu yomwe mukufuna.

Pali njira zinayi zokulitsa mafilimu kudzera pa PECVD:

1. Ikani chowotcha chandamale pa electrode mkati mwa chipinda choyikamo.
2. Yambitsani mpweya wotuluka ndi zinthu zoyika m'chipindamo.
3. Tumizani plasma pakati pa maelekitirodi ndikuyika magetsi kuti musangalatse plasma.
4. Mpweya wokhawokha umalekanitsa ndi kusanganikirana ndi pamwamba pake kuti apange filimu yopyapyala, zotulukapo zimafalikira kunja kwa chipindacho.

• Mafilimu wamba omwe amayikidwa: silicon oxides, silicon nitride, amorphous silicon,silicon oxynitrides (Si_xO_yN_z).

Chithunzi cha APCVD

Atmospheric pressure chemical vapor deposition ndi njira yochepetsera kutentha yomwe imachitika mu ng'anjo yokhazikika mumlengalenga. Mofanana ndi njira zina za CVD, APCVD imafuna mpweya wolowera mkati mwa chipinda chosungiramo, ndiye kutentha kumakwera pang'onopang'ono kuti kupangitse zomwe zimachitika pamtunda ndikuyika filimu yopyapyala. Chifukwa cha kuphweka kwa njirayi, imakhala ndi chiwerengero chokwera kwambiri.

• Mafilimu wamba omwe amayikidwa: ma silicon oxides opangidwa ndi doped ndi osasinthika, ma silicon nitrides. Amagwiritsidwanso ntchito mukuchepetsa.

HDP CVD

High density plasma chemical vapor deposition ndi mtundu wa PECVD womwe umagwiritsa ntchito madzi a m'magazi apamwamba kwambiri, omwe amalola kuti zopyapyala zizichita ndi kutentha kochepa kwambiri (pakati pa 80 ° C-150 ° C) mkati mwa chipinda choyikamo. Izi zimapanganso filimu yokhala ndi mphamvu zambiri zodzaza ngalande.

• Mafilimu wamba omwe amaikidwa: silicon dioxide (SiO₂), silicon nitride (Si₃N₄),silicon carbide (SiC).

Mtengo wa SACVD

Subatmospheric pressure chemical vapor deposition imasiyana ndi njira zina chifukwa imachitika pansi pa kukakamiza kwa chipinda ndipo imagwiritsa ntchito ozoni (O.₃) kuthandizira kuyambitsa zomwe zikuchitika. Ndondomeko yoyikayi imachitika pamphamvu kwambiri kuposa LPCVD koma yotsika kuposa APCVD, pakati pa 13,300 Pa ndi 80,000 Pa. Mafilimu a SACVD ali ndi chiwerengero chapamwamba choyikapo ndipo chimayenda bwino pamene kutentha kumawonjezeka mpaka pafupifupi 490 ° C, pomwe amayamba kuchepa. .

• Mafilimu odziwika omwe amasungidwa:Mtengo BPSG, PSG,TEOS.

Shandong Zhongpeng Special Ceramics Co., Ltd ndi imodzi mwamayankho akulu kwambiri a silicon carbide ceramic ku China. SiC ukadaulo wa ceramic: Kulimba kwa Moh ndi 9 (Kulimba kwa Moh Chatsopano ndi 13), kukana kwambiri kukokoloka ndi dzimbiri, abrasion yabwino - kukana ndi anti-oxidation. Moyo wautumiki wa SiC ndi 4 mpaka 5 nthawi yayitali kuposa 92% alumina. MOR ya RBSiC ndi 5 mpaka 7 nthawi ya SNBSC, itha kugwiritsidwa ntchito pazinthu zovuta kwambiri. Ndondomeko yobwereketsa ndi yofulumira, yobweretsera ndi monga momwe inalonjezedwa ndipo khalidweli ndi lachiwiri kwa wina aliyense. Nthawi zonse timalimbikira kutsutsa zolinga zathu ndikubwezeranso mitima yathu kwa anthu.