- Utilitatum REACTION Bonded Silicon Carbide
Reactionem Bonded Silicon Carbide (RBSC, aut Sisic) products offerre extremam duritiam / abrasion resistentia et praestantes chemical stabilitatem in infestantibus ambitibus. Silicon carbide est a synthetica materia, quae exhibet altum perficientur characteres comprehendo:
lExcellent chemical resistentia.
Quod vires RBSC est fere L% maior quam maxime nitride Bondoth Silicon carbides. RBSC est optimum corrosio resistentia et Antioxidation Ceramic .. potest formari in varietate desulpurization Ceolanus (FGD).
lOptimum lapsum et impulsum resistentia.
Est pinnaculum magnis scale abrasione repugnant tellus technology. Rbsic habent princeps duritia appropinquare, quod adamas. Disposito usus in applications ad magna shapes ubi Refractorium grades Silicon carbide sunt exhibens abrasive lapsum aut damnum ex impulsum magnarum particularum. Impingement lumen particulas ut impulsum et impingo quod includitur et abrasione gravibus solidos continet slurries. Potest formari in variis figuris, comprehendo pyramidis et sleeve figuras, tum magis universa machinator pieces disposito pro apparatu involved in processus rudis materiae.
lOptimum scelerisque inpulsa resistentia.
Refacienti Bonded Silicon Carbide components providere outstanding scelerisque impulsa resistentia sed dissimilis traditional LATERAMEN, etiam mugine humilis density cum altum mechanica vires.
lPrinceps vires (lucra fortitudinem ad temperatus).
Reactionem Bonded Silicon Carbide retinet maxime de sua mechanica vires ad elevatum temperaturis et exhibet valde humilis campester of serpere, faciens illud primum choice ad 1650ºC (2400ºC ad 3000ºC ad (2400ºC ad 3000ºC ad (2400ºC ad 3000ºC).
- Technical data-sheet
| Technical Datasheet | Unitas | Sisic (Rbsic) | Nbsic | Resic | Sextered SIC |
| Refacienti Bonded Silicon Carbide | Nitride Bonded Silicon Carbide | Renault Vel Silicon Carbide | Seged Silicon Carbide | ||
| Mole density | (G.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65 ~ 2.75 | 2.8 |
| SIC | (%) | 83,66 | LXXV ≧ | ≧ XCIX | 90 |
| Si3n4 | (%) | 0 | ≧ XXIII | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Porositas | (%) | <0,5 | X ~ XII | 15-18 | VII ~ VIII |
| Flectens vires | MPA / XX ℃ | CCL | CLX CLXXX | 80-100 | D |
| MPA / MCC ℃ | CCLXXX | CLXXX CLXXX | 90-110 | DL | |
| Modulum elasticitatis | GPA / XX ℃ | CCCXXX | DLXXX | CCC | CC |
| GPA / MCC ℃ | CCC | ~ | ~ | ~ | |
| Scelerisque conductivity | W / (m * k) | XLV (MCC ℃) | 19,6 (MCC ℃) | 36,6 (MCC ℃) | 13.5 ~ 14.5 (M ℃) |
| Conficiente de scelerisque expansion | Kˉ1 * Xˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Mons 'duritiam scale (rigiditate) | 9,5 | ~ | ~ | ~ | |
| Max, Working Daurature | ℃ | MCCCLXXX | MCDL | MDCXX (oxid) | MCCC |
- Industry CaseNam reactionem vinculum Silicon Carbide:
Power generation, Mining, eget, Petrochemical, Kiln, Machinery Manufacturing Industry, Mineralia & Metallurgy et sic in.
Tamen, dissimilis metalla et eorum Alloys, ibi sunt standardized industria perficientur criteria ad Silicon carbide. Cum amplis compositiones, densities, vestibulum artes et turba experientia, Silicon carbide components potest differre dura in constantiam, tum mechanica et eget proprietatibus. Vestri arbitrium elit decernit gradum et qualitatem materialem recipere.