Ngwa SiC maka mkpuchi ihe nkiri CVD

Mkpokọta uzuoku kemịkalụ

Kemịkalụ vapor deposition (CVD) oxide bụ usoro itolite n'ahịrị ebe gas na-ebu ụzọ na-etinye ihe nkiri dị gịrịgịrị n'elu wafer na reactor. Usoro uto bụ obere okpomọkụ ma nwee nnukwu ọganihu dị elu ma e jiri ya tụnyere yathermal oxide. Ọ na-emepụta akwa silicon dioxide dị gịrịgịrị n'ihi na etinyere ihe nkiri ahụ, kama itolite. Usoro a na-emepụta ihe nkiri nwere nnukwu ọkụ eletrik, nke dị mma maka iji IC na ngwaọrụ MEMS, n'etiti ọtụtụ ngwa ndị ọzọ.

A na-eme oxide kemịkalụ vapor (CVD) mgbe achọrọ oyi akwa dị n'èzí mana mkpụrụ silicon nwere ike ọ gaghị enwe ike ịmegharị ya.

Ọganihu mgbokwasị kemịkalụ:

Uto CVD na-eme mgbe a na-ewebata gas ma ọ bụ vepo (precursor) n'ime reactor dị ala ebe a na-ahazi wafers ma ọ bụ kwụ ọtọ ma ọ bụ kwụ ọtọ. Gas na-agafe na usoro ahụ ma na-ekesa nke ọma n'ofe nke wafers. Ka ihe ndị a na-ebu ụzọ na-agafe na reactor, wafers na-amalite ịmịnye ha n'elu ha.

Ozugbo ihe mmalite kesara nke ọma na sistemụ niile, mmeghachi omume kemịkalụ na-amalite n'akụkụ elu nke mkpụrụ. Mmeghachi omume kemịkalụ ndị a na-amalite dị ka agwaetiti, na ka usoro ahụ na-aga n'ihu, agwaetiti ndị ahụ na-eto ma jikọta iji mepụta ihe nkiri a chọrọ. Mmeghachi omume kemịkalụ na-emepụta biproducts n'elu wafers, nke na-agbasa n'ofe oke oyi ma na-asọpụta na reactor, na-ahapụ naanị wafers na mkpuchi mkpuchi ha edobere.

Onyonyo 1

Uru nke Mgbasa Vapor Chemical:

• Usoro uto okpomọkụ dị ala.
• Ọnụ ego ntinye ngwa ngwa (karịsịa APCVD).
• Ọ dịghị mkpa ka ọ bụrụ mkpụrụ silicon.
• Mkpuchi nzọụkwụ dị mma (karịsịa PECVD).

Onyonyo 2
Nkwado silicon dioxide vs. uto

Maka ozi ndị ọzọ gbasara mwepu ikuku kemịkalụ ma ọ bụ ịrịọ nhota, bikoKpọtụrụ SVMtaa ka gị na onye otu ndị na-ere ahịa anyị kparịta ụka.

Ụdị CVD

LPCVD

Ndobe ikuku kemịkalụ dị ala bụ usoro ntinye mmiri kemịkalụ ọkọlọtọ na-enweghị nrụgide. Isi ihe dị iche n'etiti LPCVD na ụzọ CVD ndị ọzọ bụ okpomọkụ nkwụnye ego. LPCVD na-eji okpomọkụ kachasị elu na-edebe ihe nkiri, ọ na-adịkarị karịa 600°C.

Gburugburu ebe nrụgide dị ala na-emepụta ihe nkiri na-edochaghị anya nke nwere ịdị ọcha dị elu, nrụpụta, na ịdị n'otu. A na-eme nke a n'etiti 10 - 1,000 Pa, ebe nrụgide ụlọ ọkọlọtọ bụ 101,325 Pa. Okpomọkụ na-ekpebi oke na ịdị ọcha nke ihe nkiri ndị a, na okpomọkụ dị elu na-eme ka ihe nkiri na-egbuke egbuke ma dị ọcha.

• Ihe nkiri a na-edebekarị:polysilicon, doped & oxides enweghị atụ,nitrides.

PECVD

Nkwanye ikuku kemịkalụ nke Plasma bụ obere okpomọkụ, usoro ntinye njupụta ihe nkiri dị elu. PECVD na-ewere ọnọdụ na CVD reactor na mgbakwunye nke plasma, nke bụ gas nke nwere akụkụ ionized nwere ọdịnaya eletrọn dị elu (~ 50%). Nke a bụ usoro nkwụnye ọkụ dị ala nke na-eme n'etiti 100 ° C - 400 ° C. Enwere ike ịme PECVD na obere okpomọkụ n'ihi na ike sitere na electrons efu na-ekewapụ gas ndị na-arụ ọrụ iji mepụta ihe nkiri n'elu wafer.

Usoro ntinye a na-eji ụdị plasma abụọ dị iche iche:

1. Oyi (na-abụghị thermal): electrons nwere okpomọkụ dị elu karịa ihe ndị na-anọpụ iche na ion. Usoro a na-eji ike nke electrons site n'ịgbanwe nrụgide na ụlọ nkwụnye ego.
2. Thermal: eletrọn bụ otu okpomọkụ dị ka ụmụ irighiri ihe na ion na ụlọ nkwụnye ego.

N'ime ụlọ nkwụnye ego, a na-eziga voltaji ugboro ugboro redio n'etiti electrodes n'elu na n'okpuru wafer. Nke a na-ana ndị electrons ebubo ma debe ha n'ọnọdụ dị egwu iji tinye ihe nkiri a chọrọ.

Enwere usoro anọ iji na-eto ihe nkiri site na PECVD:

1. Tinye wafer ebumnuche na electrode n'ime ụlọ nkwụnye ego.
2. Webata gas na-emegharị ihe na ihe nkwụnye ego n'ime ụlọ ahụ.
3. Zipụ plasma n'etiti electrodes wee tinye voltaji ka ọ kpalie plasma.
4. Reactive gas dissociates na reacts na wafer elu na-etolite a mkpa ihe nkiri, byproducts agbasa si n'ime ụlọ.

• Ihe nkiri a na-edebekarị: silicon oxides, silicon nitride, silicon amorphous,silicon oxynitrides (Si_xO_yN_z).

APCVD

Ntụkwasị mmiri kemịkalụ nrụgide ikuku bụ usoro nkwụnye ọkụ dị ala nke na-ewere ọnọdụ n'ime ọkụ na nrụgide ikuku ọkọlọtọ. Dị ka usoro CVD ndị ọzọ, APCVD chọrọ gas precursor n'ime ụlọ nkwụnye ego, mgbe ahụ, okpomọkụ na-eji nwayọọ nwayọọ na-ebili iji mee ka mmeghachi omume dị n'elu wafer ma tinye ihe nkiri dị mkpa. N'ihi ịdị mfe nke usoro a, ọ nwere oke ntinye ego.

• Ihe nkiri a na-edebekarị: silicon oxides doped na undoped, silicon nitrides. A na-ejikwa yaannealing.

HDP CVD

Njupụta kemịkalụ kemịkalụ plasma dị elu bụ ụdị PECVD nke na-eji plasma njupụta dị elu, nke na-enye ohere wafers meghachi omume na obere okpomọkụ (n'etiti 80°C-150°C) n'ime ụlọ ntinye. Nke a na-emepụtakwa ihe nkiri nwere nnukwu ikike imeju trenchi.

• Ihe nkiri a na-edebekarị: silicon dioxide (SiO₂), silicon nitride (Si₃N₄),silicon carbide (SiC).

SACVD

Subatmospheric pressure chemical vepor deposition dị iche na ụzọ ndị ọzọ n'ihi na ọ na-ewere ọnọdụ n'okpuru ọkọlọtọ ụlọ mgbali ma na-eji ozone (O₃) iji nyere aka kpalie mmeghachi omume ahụ. Usoro nkwụnye ego na-ewere ọnọdụ na nrụgide dị elu karịa LPCVD ma dị ala karịa APCVD, n'etiti ihe dịka 13,300 Pa na 80,000 Pa. SACVD ihe nkiri nwere nnukwu ntinye ego na nke na-eme ka ọ dịkwuo mma ka okpomọkụ na-abawanye ruo ihe dịka 490 ° C, ebe ọ na-amalite ibelata. .

• Ihe nkiri a na-edebekarị:BPSGPSG,TEOS.

Shandong Zhongpeng Special Ceramics Co., Ltd bụ otu n'ime nnukwu silicon carbide seramiiki ihe ngwọta ọhụrụ na China. SiC technical ceramic: Moh's hardness is 9 (New Moh's hardness is 13), na ezigbo nguzogide mbuze na corrosion, ọmarịcha abrasion - nguzogide na mgbochi oxidation. Ndụ ọrụ ngwaahịa SiC bụ 4 ruo 5 ugboro ogologo karịa 92% alumina ihe onwunwe. MOR nke RBSiC bụ 5 ruo 7 ugboro karịa nke SNBSC, enwere ike iji ya mee ihe maka ụdị mgbagwoju anya. Usoro nhota dị ngwa ngwa, nnyefe dị ka e kwere ná nkwa na àgwà bụ nke abụọ na ọ dịghị. Anyị na-anọgidesi ike mgbe niile n'ịgba ebumnobi anyị aka ma na-enyeghachi obi anyị azụ n'obodo.