Silicon carbide tau pom nyob rau hauv 1893 raws li kev lag luam abrasive rau kev sib tsoo log thiab tsheb nres. Txog ib nrab ntawm lub xyoo pua 20th, SiC wafer siv tau loj hlob los suav nrog hauv LED thev naus laus zis. Txij thaum ntawd los, nws tau nthuav dav mus rau ntau daim ntawv thov semiconductor vim nws lub cev muaj txiaj ntsig zoo. Cov khoom no tau pom meej nyob rau hauv nws txoj kev siv ntau yam hauv thiab sab nraud kev lag luam semiconductor. Nrog Moore Txoj Cai tshwm sim kom ncav cuag nws qhov txwv, ntau lub tuam txhab hauv kev lag luam semiconductor tab tom nrhiav rau silicon carbide ua cov khoom siv semiconductor yav tom ntej. SiC tuaj yeem tsim tau siv ntau yam polytypes ntawm SiC, txawm hais tias nyob rau hauv kev lag luam semiconductor, feem ntau cov substrates yog 4H-SiC, nrog 6H- ua tsawg dua li SiC kev lag luam tau loj hlob. Thaum xa mus rau 4H- thiab 6H- silicon carbide, H sawv cev rau cov qauv siv lead ua lattice. Tus lej sawv cev rau qhov sib npaug ntawm cov atoms hauv cov qauv siv lead ua, qhov no tau piav qhia hauv SVM daim ntawv muaj peev xwm hauv qab no. Qhov zoo ntawm Silicon Carbide Hardness Muaj ntau qhov zoo rau kev siv silicon carbide ntau dua cov tsoos silicon substrates. Ib qho ntawm qhov zoo ntawm cov khoom no yog nws hardness. Qhov no muab cov khoom siv ntau qhov zoo, hauv kev kub ceev, kub kub thiab / lossis kev siv hluav taws xob siab. Silicon carbide wafers muaj cov thermal conductivity siab, uas txhais tau tias lawv tuaj yeem hloov cov cua sov ntawm ib qho mus rau lwm qhov dej. Qhov no txhim kho nws cov hluav taws xob conductivity thiab thaum kawg miniaturization, ib qho ntawm cov hom phiaj ntawm kev hloov mus rau SiC wafers. Thermal peev xwm SiC substrates kuj muaj cov coefficient qis rau thermal expansion. Thermal expansion yog tus nqi thiab kev taw qhia cov khoom nthuav tawm lossis cog lus raws li nws ua kom sov lossis txias. Cov lus piav qhia feem ntau yog dej khov, txawm tias nws coj txawv ntawm cov hlau feem ntau, nthuav dav thaum nws txias thiab ntsws thaum nws kub. Silicon carbide tsis tshua muaj coefficient rau thermal expansion txhais tau hais tias nws tsis hloov loj loj los yog zoo li nws yog rhuab los yog txias, uas ua rau nws zoo meej rau haum rau me me li thiab packing ntau transistors mus rau ib nti. Lwm qhov zoo dua ntawm cov substrate no yog lawv cov kev ua haujlwm siab rau thermal shock. Qhov no txhais tau tias lawv muaj peev xwm hloov qhov kub thiab txias sai yam tsis muaj kev tawg lossis tawg. Qhov no tsim kom muaj txiaj ntsig zoo thaum fabricating cov cuab yeej vim nws yog lwm yam toughness yam ntxwv uas txhim kho lub neej thiab kev ua tau zoo ntawm silicon carbide piv rau cov tsoos bulk silicon. Nyob rau sab saum toj ntawm nws lub peev xwm thermal, nws yog ib qho khoom siv ruaj khov thiab tsis hnov mob nrog cov kua qaub, alkalis lossis molten ntsev ntawm qhov kub txog li 800 ° C. Qhov no muab cov substrates versatility nyob rau hauv lawv daim ntawv thov thiab ntxiv pab lawv lub peev xwm los tawm ua bulk silicon nyob rau hauv ntau daim ntawv thov. Nws lub zog ntawm qhov kub thiab txias kuj tso cai rau nws ua haujlwm ruaj ntseg ntawm qhov kub tshaj 1600 ° C. Qhov no ua rau nws tsim nyog substrate rau txhua qhov kev thov kub siab.
Post lub sij hawm: Jul-09-2019