SiC substrate no ka uhi kiʻiʻoniʻoni CVD

Hoʻomoe ʻana i ka mahu

ʻO ka hoʻomoe ʻana i ka mahu (CVD) oxide kahi kaʻina ulu laina kahi e waiho ai ke kinoea mua i kahi kiʻiʻoniʻoni lahilahi ma luna o kahi wafer i loko o kahi reactor. ʻO ke kaʻina hana he haʻahaʻa haʻahaʻa a ʻoi aku ka kiʻekiʻe o ka ulu ʻana ke hoʻohālikelike ʻiawaiʻona wai wela. Hoʻopuka pū ia i nā ʻāpana silika dioxide ʻoi aku ka lahilahi no ka mea ua hoʻopau ʻia ke kiʻiʻoniʻoni, ma mua o ka ulu ʻana. Hoʻopuka kēia kaʻina hana i kahi kiʻiʻoniʻoni me ke kūpaʻa uila kiʻekiʻe, he mea maikaʻi loa ia no ka hoʻohana ʻana i nā polokalamu IC a me MEMS, ma waena o nā noi ʻē aʻe.

Hana ʻia ka wai mahu (CVD) oxide i ka wā e pono ai kahi papa waho akā ʻaʻole hiki ke hoʻokahe ʻia ka substrate silika.

ʻO ka ulu ʻana o ka hoʻopaʻa ʻana i ka mahu kino:

Hoʻomaka ka ulu ʻana o CVD i ka wā e hoʻokomo ʻia ai kahi kinoea a mahu paha (precursor) i loko o kahi reactor wela haʻahaʻa kahi e hoʻonohonoho ʻia ai nā wafers ma ke kū pololei a i ʻole ka pae. Holo ke kinoea ma ka ʻōnaehana a puʻunaue like i ka ʻili o nā wafers. Ke neʻe nei kēia mau precursors i loko o ka reactor, hoʻomaka nā wafers e hoʻokomo iā lākou ma luna o ko lākou ʻili.

I ka manawa e puunaue like ai na precursors i loko o ka ʻōnaehana, e hoʻomaka ana nā hopena kemika ma ka ʻili o nā substrate. Hoʻomaka kēia mau hana kemika ma ke ʻano he mokupuni, a ke hoʻomau nei ka hana, ulu a hui nā mokupuni e hana i ke kiʻiʻoniʻoni i makemake ʻia. Hoʻokumu ka hopena kemika i nā huahana ʻelua ma luna o ka ʻili o nā wafers, e laha ana ma ka ʻaoʻao o ka palena a kahe i waho o ka reactor, e waiho wale ana i nā wafers me kā lākou uhi kiʻiʻoniʻoni i waiho ʻia.

Helu 1

Nā pōmaikaʻi o ka hoʻopaʻa ʻana i ka mahu kino:

• Kaʻina ulu wela haʻahaʻa.
• Ka helu hoʻopaʻa wikiwiki (ʻoi aku ka APCVD).
• ʻAʻole pono he substrate silika.
• ʻO ka uhi ʻana i ka pae maikaʻi (ʻoi aku ka PECVD).

Kiʻi 2
ʻO ka hoʻopaʻa ʻana o ka silicone dioxide vs

No ka ʻike hou aku e pili ana i ka waiho ʻana o ka mahu a i ʻole ke noi ʻana i kahi ʻōlelo, e ʻoluʻoluHOOLAHA SVMi kēia lā e kamaʻilio me kekahi lālā o kā mākou hui kūʻai.

Nā ʻano o CVD

LPCVD

ʻO ka haʻahaʻa haʻahaʻa ka hoʻoheheʻe ʻana i ka mahu kemika maʻamau me ka ʻole o ka kaomi ʻana. ʻO ka ʻokoʻa nui ma waena o LPVCD a me nā ʻano CVD ʻē aʻe ʻo ka deposition temperature. Hoʻohana ʻo LPCVD i ka wela kiʻekiʻe loa e waiho i nā kiʻiʻoniʻoni, maʻamau ma luna o 600°C.

Hoʻokumu ke ʻano haʻahaʻa haʻahaʻa i kahi kiʻiʻoniʻoni like ʻole me ka maʻemaʻe kiʻekiʻe, reproducibility, a me ka homogeneity. Hana ʻia kēia ma waena o 10 - 1,000 Pa, ʻoiai ʻo ke kaomi lumi maʻamau ʻo 101,325 Pa. Hoʻoholo ka mahana i ka mānoanoa a me ka maʻemaʻe o kēia mau kiʻiʻoniʻoni, me nā kiʻekiʻe kiʻekiʻe e hopena i nā kiʻiʻoniʻoni ʻoi aku ka mānoanoa.

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia:polysilicon, nā oxide i hoʻopaʻa ʻia a i hoʻopaʻa ʻole ʻia,nā nitrides.

PECVD

ʻO ka hoʻoheheʻe ʻana i ka mahu kemika i hoʻonui ʻia i ka plasma he haʻahaʻa haʻahaʻa, ʻenehana hoʻopaʻa kiʻi ʻoniʻoni kiʻekiʻe. Hana ʻia ka PECVD i loko o kahi reactor CVD me ka hoʻohui ʻana o ka plasma, ʻo ia kahi kinoea i hoʻokaʻawale ʻia me kahi ʻike electron manuahi kiʻekiʻe (~ 50%). He ala haʻahaʻa haʻahaʻa kēia ma waena o 100°C – 400°C. Hiki ke hana ʻia ka PECVD ma nā wela haʻahaʻa no ka mea ʻo ka ikehu mai nā electrons manuahi e hoʻokaʻawale i nā kinoea reactive e hana i kahi kiʻiʻoniʻoni ma ka ʻili wafer.

Hoʻohana kēia ʻano deposition i ʻelua mau ʻano like ʻole o ka plasma:

1. Anu (ʻaʻohe wela): ʻoi aku ka kiʻekiʻe o ka wela o nā electron ma mua o nā ʻāpana kūʻokoʻa a me nā ion. Hoʻohana kēia ʻano i ka ikehu o nā electrons ma o ka hoʻololi ʻana i ke kaomi i loko o ke keʻena deposition.
2. Thermal: like ka wela o nā electrons me nā ʻāpana a me nā ion i loko o ke keʻena deposition.

I loko o ke keʻena deposition, hoʻouna ʻia ka uila uila ma waena o nā electrodes ma luna a ma lalo o ka wafer. Hoʻopiʻi kēia i nā electrons a mālama iā lākou i kahi kūlana hauʻoli i mea e waiho ai i ke kiʻiʻoniʻoni i makemake ʻia.

ʻEhā mau ʻanuʻu no ka ulu ʻana i nā kiʻiʻoniʻoni ma o PECVD:

1. E kau i ka wafer target ma kahi electrode i loko o ke keʻena deposition.
2. Hoʻokomo i nā kinoea reactive a me nā mea hoʻomoe i ke keʻena.
3. E hoʻouna i ka plasma ma waena o nā electrodes a hoʻopili i ka volta e hoʻoulu i ka plasma.
4. Hoʻokaʻawale ʻia ke kinoea reactive a hana ʻia me ka ʻili wafer e hana i kahi kiʻiʻoniʻoni ʻoniʻoni, hoʻopuehu nā huahana ma waho o ke keʻena.

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia: silicon oxides, silicon nitride, amorphous silicon,silika oxynitrides (Si_xO_yN_z).

APCVD

ʻO ka hoʻoheheʻe ʻana i ka mahu kemika puʻe o ka lewa kahi ʻenehana deposition haʻahaʻa haʻahaʻa i hana ʻia i loko o kahi umu ahi ma ke kaomi lewa maʻamau. E like me nā ʻano hana CVD ʻē aʻe, pono ʻo APCVD i ke kinoea mua i loko o ke keʻena deposition, a laila piʻi mālie ka mahana e hoʻoheheʻe i nā hopena ma ka ʻili wafer a waiho i kahi kiʻiʻoniʻoni lahilahi. Ma muli o ka maʻalahi o kēia ʻano, he kiʻekiʻe loa ka deposition rate.

• ʻO nā kiʻiʻoniʻoni maʻamau i waiho ʻia: doped a undoped silicon oxides, silicon nitrides. Hoʻohana pū ʻia maannealing.

HDP CVD

ʻO ka hoʻoheheʻe ʻana i ka mahu kemika plasma kiʻekiʻe he mana o PECVD e hoʻohana ana i ka plasma kiʻekiʻe kiʻekiʻe, e hiki ai i nā wafers ke hana me kahi haʻahaʻa haʻahaʻa (ma waena o 80°C-150°C) i loko o ke keʻena deposition. Hoʻokumu pū kēia i kahi kiʻiʻoniʻoni me nā hiki ke hoʻopiha piha i ka auwaha.

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia: silicon dioxide (SiO₂), nitride silika (Si₃N₄),kalapona kalapona (SiC).

SACVD

ʻOkoʻa ka hoʻoheheʻe ʻana o ka mahu kemika subamate mai nā ʻano hana ʻē aʻe no ka mea e hana ʻia ma lalo o ke kaomi lumi maʻamau a hoʻohana i ka ozone (O₃) e kōkua i ka hoʻoikaika ʻana i ka hopena. Hana ʻia ke kaʻina hana hoʻopaʻa ma kahi ʻoi aku ka nui ma mua o ka LPCVD akā ʻoi aku ka haʻahaʻa ma mua o APCVD, ma waena o 13,300 Pa a me 80,000 Pa. ʻO nā kiʻi ʻoniʻoni SACVD he kiʻekiʻe ka nui o ka deposition a hoʻomaikaʻi i ka piʻi ʻana o ka mahana a hiki i ka 490°C, ma ia manawa e hoʻomaka ai e emi. .

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia:BPSG, PSG,TEOS.

ʻO Shandong Zhongpeng Special Ceramics Co., Ltd kekahi o ka silicon carbide ceramic mea hoʻonā hou i Kina. ʻO ka ʻenehana loea SiC: ʻO 9 ka paʻakikī o Moh (ʻo 13 ka paʻakikī o New Moh), me ke kūpaʻa maikaʻi loa i ka erosion a me ka corrosion, abrasion maikaʻi loa - kūpaʻa a me ka anti-oxidation. ʻO ke ola lawelawe o ka huahana SiC he 4 a 5 mau manawa lōʻihi ma mua o 92% alumina mea. ʻO ka MOR o RBSiC he 5 a 7 mau manawa o ka SNBSC, hiki ke hoʻohana ʻia no nā ʻano paʻakikī. He wikiwiki ke kaʻina hana, ʻo ka hāʻawi ʻana e like me ka mea i ʻōlelo ʻia a ʻoi aku ka maikaʻi o ka lua. Hoʻomau mau mākou i ka hoʻokūkū i kā mākou mau pahuhopu a hāʻawi hou i ko mākou naʻau i ke kaiāulu.