ʻO ka mea hoʻoheheʻe Silicon Carbide (RXSIC, ReSIC, RSIC, R-SIC). ʻO ka mea maka mua ka carbide silika. ʻAʻole hoʻohana ʻia nā mea kōkua densification. Hoʻomaʻamaʻa ʻia nā mea ʻōmaʻomaʻo ma luna o 2200ºC no ka hoʻohui hope. ʻO ka mea i loaʻa i ka hopena e pili ana i ka 25% porosity, kahi e kaupalena ai i kona mau waiwai mechanical; akā naʻe, hiki ke maʻemaʻe loa ka mea. He waiwai nui ka hana.
Hoʻopaʻa ʻia ʻo Silicon Carbide (RBSIC). ʻO nā mea hoʻomaka mua he silicon carbide me kalapona. Hoʻokomo ʻia ka ʻāpana ʻōmaʻomaʻo me ka silika hoʻoheheʻe ʻia ma luna o 1450ºC me ka pane ʻana: SiC + C + Si -> SiC. Loaʻa i ka microstructure ka nui o ka silikoni keu, e kaupalena ana i kona mau waiwai wela a me ka pale ʻana i ka corrosion. Hoʻololi liʻiliʻi liʻiliʻi i ka wā o ke kaʻina hana; akā naʻe, loaʻa pinepine kahi papa silika ma ka ʻili o ka ʻāpana hope. Hoʻohana ʻia ʻo ZPC RBSiC i ka ʻenehana kiʻekiʻe, e hana ana i ka pale pale lole, nā papa, nā tile, nā ʻāpana cyclone, nā poloka, nā ʻāpana like ʻole, a me nā nozzles FGD nozzles & corrosion resistance, heat exchanger, paipu, paipu, a pēlā aku.
Nitride Bonded Silicon Carbide (NBSIC, NSIC). ʻO nā mea hoʻomaka mua he silicon carbide me ka pauka silika. Hoʻopuka ʻia ka ʻōmaʻomaʻo paʻa i loko o kahi lewa nitrogen kahi e kū ai ka hopena SiC + 3Si + 2N2 -> SiC + Si3N4. Hōʻike ka mea hope i ka loli liʻiliʻi i ka wā e hana ai. Hōʻike ka mea i kekahi pae o ka porosity (ma kahi o 20%).
Hoʻopili pololei ʻia ʻo Silicon Carbide (SSIC). ʻO Silicon carbide ka mea hoʻomaka. ʻO nā mea kōkua hoʻopaʻapaʻa he boron me ke kalapona, a loaʻa ka hoʻopaʻa ʻana ma ke kaʻina hana ʻoi aku ma luna o 2200ºC. ʻOi aku ka maikaʻi o kona ʻano wela kiʻekiʻe a me ka pale ʻana i ka corrosion ma muli o ka loaʻa ʻole o ka lua aniani aniani ma nā palena ʻai.
Liquid Phase Sintered Silicon Carbide (LSSIC). ʻO Silicon carbide ka mea hoʻomaka. ʻO nā mea kōkua densification ʻo yttrium oxide me ka alumini oxide. Loaʻa ka hoʻopaʻapaʻa ma luna o 2100ºC e ka hopena wai-phase a loaʻa i kahi lua aniani aniani. ʻOi aku ka maikaʻi o nā waiwai mechanical ma mua o SSIC, akā ʻaʻole maikaʻi nā waiwai kiʻekiʻe a me ke kūpaʻa corrosion.
ʻO ka ʻaila silikino paʻi wela (HPSIC). Hoʻohana ʻia ka pauka Silicon carbide e like me ka mea hoʻomaka. ʻO nā mea kōkua hoʻopaʻapaʻa he boron me ke kalapona a i ʻole ka yttrium oxide me ka alumini oxide. Hana ʻia ka Densification ma o ka hoʻohana like ʻana o ke kaomi mechanical a me ka mahana i loko o kahi lua make graphite. He mau papa maʻalahi nā ʻano. Hiki ke hoʻohana ʻia i nā mea kōkua sintering haʻahaʻa. Hoʻohana ʻia nā waiwai mīkini o nā mea i hoʻopaʻa ʻia ma ke ʻano he kumu kumu e hoʻohālikelike ai i nā kaʻina hana ʻē aʻe. Hiki ke hoʻololi ʻia nā waiwai uila e ka hoʻololi ʻana i nā mea kōkua densification.
ʻO CVD Silicon Carbide (CVDSIC). Hoʻokumu ʻia kēia mea e kahi kaʻina hoʻoheheʻe mahu (CVD) e pili ana i ka hopena: CH3SiCl3 -> SiC + 3HCl. Hana ʻia ka hopena ma lalo o kahi lewa H2 me ka SiC e waiho ʻia ma luna o kahi substrate graphite. ʻO ke kaʻina hana i kahi mea maʻemaʻe kiʻekiʻe loa; akā naʻe, hiki ke hana ʻia nā papa maʻalahi. He pipiʻi loa ke kaʻina hana ma muli o ka lohi o ka manawa.
ʻO ka mahu kiʻi kiʻiʻoniʻoni Silicon Carbide (CVCSiC). Hoʻomaka kēia kaʻina hana me kahi precursor graphite proprietary i mīkini ʻia i loko o nā ʻano ʻupena kokoke i ke kūlana graphite. Hoʻopili ke kaʻina hana hoʻololi i ka ʻāpana graphite i ka ʻenehe mokuahi in situ e hana i kahi polycrystalline, stoichiometrically correct SiC. ʻO kēia kaʻina hana paʻa i hiki ke hana i nā hoʻolālā paʻakikī i loko o kahi ʻāpana SiC i hoʻololi piha ʻia me nā hiʻohiʻona hoʻomanawanui a me ka maʻemaʻe kiʻekiʻe. Hoʻopōkole ke kaʻina hana hoʻololi i ka manawa hana maʻamau a hoʻemi i nā kumukūʻai ma luna o nā ʻano hana ʻē aʻe.
Ka manawa hoʻouna: Jun-16-2018