SiC - Silicon Carbide

Ua ʻike ʻia ʻo Silicon carbide i ka makahiki 1893 ma ke ʻano he abrasive ʻoihana no ka wili ʻana i nā huila a me nā kaʻa kaʻa. Ma ka waena o ke kenekulia 20, ua hoʻohana ʻo SiC wafer e hoʻokomo i ka ʻenehana LED. Mai ia manawa, ua hoʻonui ʻia i nā noi semiconductor he nui ma muli o kāna mau waiwai kino. ʻIke ʻia kēia mau waiwai i kāna ʻano nui o ka hoʻohana ʻana i loko a i waho o ka ʻoihana semiconductor. Me ka Moore's Law i ʻike ʻia e hiki i kona palena, nui nā ʻoihana i loko o ka ʻoihana semiconductor e nānā nei i ka silicon carbide ma ke ʻano he semiconductor material o ka wā e hiki mai ana. Hiki ke hana ʻia ʻo SiC me ka hoʻohana ʻana i nā polytypes he nui o SiC, ʻoiai i loko o ka ʻoihana semiconductor, ʻo ka hapa nui o nā substrates ʻo 4H-SiC, me ka 6H- e lilo i mea maʻamau i ka ulu ʻana o ka mākeke SiC. Ke kuhikuhi nei i ka 4H- a me 6H- silicon carbide, hōʻike ka H i ke ʻano o ka lattice aniani. Hōʻike ka helu i ke kaʻina hoʻopaʻa ʻana o nā ʻātoma i loko o ka hale aniani, wehewehe ʻia kēia ma ka pakuhi hiki SVM ma lalo. Nā Pōmaikaʻi o Silicon Carbide Hardness He nui nā mea maikaʻi i ka hoʻohana ʻana i ka carbide silicon ma mua o nā substrate silika kahiko. ʻO kekahi o nā pono nui o kēia mea ʻo kona paʻakikī. Hāʻawi kēia i ka waiwai i nā pono he nui, ma ke kiʻekiʻe kiʻekiʻe, kiʻekiʻe wela a me / a i ʻole nā ​​noi uila kiʻekiʻe. He kiʻekiʻe ka wela o nā wafers Silicon carbide, ʻo ia hoʻi, hiki iā lākou ke hoʻololi i ka wela mai kekahi wahi a i kekahi luawai. Hoʻomaikaʻi kēia i kāna conductivity uila a me ka miniaturization, kekahi o nā pahuhopu maʻamau o ka hoʻololi ʻana i nā wafers SiC. He haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa no ka hoʻonui ʻana i ka wela. ʻO ka hoʻonui wela ka nui a me ke kuhikuhi ʻana i hoʻonui ʻia a ʻaelike paha i ka wā e wela ai a maʻalili paha. ʻO ka wehewehe maʻamau ʻo ia ka hau, ʻoiai ʻo ia ke ʻano o ke ʻano o ka hapa nui o nā metala, e hoʻonui ana i ka wā e maʻalili a me ka emi ʻana i ka wā e wela ai. ʻO ka coefficient haʻahaʻa o Silicon carbide no ka hoʻonui wela, ʻo ia hoʻi, ʻaʻole ia e loli nui i ka nui a i ʻole ke ʻano i ka wā i wela ai a i hoʻoluʻu ʻia paha, ʻo ia ka mea e kūpono ai no ka hoʻopili ʻana i nā mea liʻiliʻi a me ka hoʻopili ʻana i nā transistors hou aʻe i hoʻokahi pahu. ʻO kekahi pōmaikaʻi nui o kēia mau substrates ko lākou kūpaʻa kiʻekiʻe i ka haʻalulu wela. 'O ia ho'i, hiki iā lākou ke ho'ololi koke i nā mahana me ka haki 'ole a pohā. Hoʻokumu kēia i kahi pōmaikaʻi i ka hana ʻana i nā mea hana ʻoiai he ʻano paʻakikī ʻē aʻe ia e hoʻomaikaʻi ai i ke ola a me ka hana o ka silicon carbide i hoʻohālikelike ʻia me ka silikoni nui. Ma luna o kona mau mea wela, he substrate lōʻihi loa ia a ʻaʻole e hoʻopili me nā waikawa, alkalis a i ʻole nā ​​paʻakai hoʻoheheʻe ʻia i nā mahana a hiki i 800 ° C. Hāʻawi kēia i kēia mau substrates versatility i kā lākou mau noi a kōkua hou i ko lākou hiki ke hana i ka hana silika nui i nā noi he nui. ʻO kona ikaika i nā wela kiʻekiʻe e hiki ai iā ia ke hana palekana ma nā mahana ma luna o 1600 ° C. He substrate kūpono kēia no kahi noi wela kiʻekiʻe.