RBSiC/SiSiC Reaction Bonded Silicon Carbide

REACTION BONDED SILICON CARBIDE KAHIKI
ʻO ka carbide silicon i hoʻopaʻa ʻia, i kekahi manawa i kapa ʻia ʻo ka silicon carbide.

Hāʻawi ka infiltration i ka mea i kahi hui kūʻokoʻa o ka mechanical, thermal, a me nā waiwai uila i hiki ke hoʻopaʻa ʻia i ka noi.

ʻO Silicon Carbide kekahi o nā seramika paʻakikī, a paʻa ka paʻakikī a me ka ikaika i nā mahana kiʻekiʻe, ʻo ia ka mea i waena o nā mea pale lole maikaʻi loa. Hoʻohui ʻia, loaʻa iā SiC kahi conductivity wela kiʻekiʻe, ʻoi aku ka maikaʻi ma ka pae CVD (chemical vapor deposition), e kōkua ana i ka pale ʻana i ka haʻalulu wela. He hapalua hoʻi ke kaumaha o ke kila.

Ma muli o kēia hui pū ʻana o ka paʻakikī, ke kūpaʻa ʻana i ka ʻaʻahu, ka wela a me ka corrosion, ʻike pinepine ʻia ʻo SiC no nā maka sila a me nā ʻāpana pump hana kiʻekiʻe.

Loaʻa i ka Reaction Bonded SiC ka ʻenehana hana haʻahaʻa haʻahaʻa me ka palaoa papa. Hāʻawi ia i ka paʻakikī haʻahaʻa a hoʻohana i ka mahana, akā ʻoi aku ka kiʻekiʻe o ka thermal conductivity.

ʻOi aku ka maikaʻi o ka Direct Sintered SiC ma mua o ka Reaction Bonded a ua kuhikuhi pinepine ʻia no ka hana wela kiʻekiʻe.