- NA PONO O KA REACTION BONDED SILICON CARBIDE
Hāʻawi nā huahana Reaction Bonded Silicon Carbide (RBSC, a i ʻole SiSiC) i ka paʻakikī paʻakikī / kūʻē abrasion a me ke kūpaʻa kemika koʻikoʻi i nā kaiapuni ʻino. ʻO Silicon Carbide kahi mea synthetic e hōʻike ana i nā hiʻohiʻona hana kiʻekiʻe e like me:
lKūleʻa kemika maikaʻi loa.
ʻO ka ikaika o RBSC he 50% ʻoi aku ka nui ma mua o ka nui o ka nitride paʻa silicon carbide. ʻO RBSC ka maikaʻi o ka corrosion resistance a me ka antioxidation ceramic.
lʻO ka ʻaʻahu maikaʻi a me ke kūpaʻa hopena.
ʻO ia ke kiʻekiʻe o ka ʻenehana seramika kūpaʻa abrasion nui. He kiʻekiʻe ka paʻakikī o RBSiC e pili ana i ka daimana. Hoʻolālā ʻia no ka hoʻohana ʻana i nā noi no nā ʻano nui kahi e hōʻike ana nā māka refractory o ka silicon carbide i ka lole abrasive a i ʻole ka pōʻino mai ka hopena o nā mea nui. Kūleʻa i ka hoʻopili pololei ʻana i nā ʻāpana māmā a me ka hopena a me ka hoʻoheheʻe ʻana i ka abrasion o nā paʻa kaumaha i loaʻa nā slurries. Hiki ke hana ʻia i loko o nā ʻano ʻano like ʻole, me nā ʻano cone a me nā lima lima, a me nā ʻāpana ʻenehana paʻakikī i hoʻolālā ʻia no nā lako hana i ka hana ʻana i nā mea maka.
lKūleʻa haʻalulu wela maikaʻi.
Hāʻawi ʻia nā ʻāpana carbide silicon i hoʻopaʻa ʻia i ke kūʻē ʻana i ka haʻalulu wela akā ʻaʻole like me nā seramika maʻamau, ua hui pū lākou i ka haʻahaʻa haʻahaʻa me ka ikaika mechanical kiʻekiʻe.
lKa ikaika kiʻekiʻe (loaʻa ka ikaika ma ka mahana).
Hoʻopaʻa ʻia ʻo Silicon carbide i hoʻopaʻa ʻia i ka hapa nui o kona ikaika mechanical ma nā wela kiʻekiʻe a hōʻike i nā pae haʻahaʻa o ka kolo, e lilo ana ia i koho mua no nā noi lawe ukana ma ka laulā 1300ºC a 1650ºC (2400ºC a 3000ºF).
- Pepa ʻikepili ʻenehana
Pepa ʻikepili ʻenehana | Unite | SiSiC (RBSiC) | NbSiC | ReSiC | Sintered SiC |
Hoʻopili ʻia ʻo Silicon Carbide | Nitride Silicon Carbide | ʻO Silicon Carbide i hana hou ʻia | Sintered Silicon Carbide | ||
ʻAno nui | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2.75 | 2.8 |
SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
Si | (%) | 15.65 | 0 | 0 | 9 |
Wehe Porosity | (%) | <0.5 | 10~12 | 15-18 | 7~8 |
Ka ikaika kulou | Mpa / 20 ℃ | 250 | 160~180 | 80-100 | 500 |
Mpa / 1200 ℃ | 280 | 170~180 | 90-110 | 550 | |
Modulus o ka elasticity | Gpa / 20 ℃ | 330 | 580 | 300 | 200 |
Gpa / 1200 ℃ | 300 | ~ | ~ | ~ | |
ʻO ke kau wela wela | W/(m*k) | 45 (1200 ℃) | 19.6 (1200 ℃) | 36.6 (1200 ℃) | 13.5~14.5 (1000 ℃) |
Maikaʻi o ka hoʻonui wela | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
ʻO ka unahi paʻakikī o Mons (Rigidity) | 9.5 | ~ | ~ | ~ | |
ʻO ka mahanahana hana kiʻekiʻe | ℃ | 1380 | 1450 | 1620 (oxid) | 1300 |
- Hihia HanaNo ka Reaction Bonded Silicon Carbide:
Hoʻoulu mana, Mining, Chemical, Petrochemical, Kiln, ʻoihana hana mīkini, Minerals & Metallurgy a pēlā aku.
Eia nō naʻe, ʻaʻole like me nā metala a me kā lākou mau mea hoʻohui, ʻaʻohe mea hoʻohālikelike hana ʻoihana hana no ka silicon carbide. Me ka laulā o nā haku mele, density, ʻenehana hana a me ka ʻike ʻoihana, hiki ke ʻokoʻa nā ʻāpana silicon carbide i ke kūlike, a me nā waiwai mechanical a me nā kemika. ʻO kāu koho mea hoʻolako e hoʻoholo i ke kiʻekiʻe a me ka maikaʻi o nā mea i loaʻa iā ʻoe.