Recrystallized Silicon Carbide (RXSIC, ReSIC, RSIC, R-SIC). Kayan da aka fara farawa shine silicon carbide. Ba a yi amfani da kayan taimako na densification. Koren compacts ana dumama zuwa sama da 2200ºC don ƙarfafa ƙarshe. Sakamakon abu yana da kusan 25% porosity, wanda ke iyakance kayan aikin injiniya; duk da haka, kayan na iya zama da tsabta sosai. Tsarin yana da matukar tattalin arziki.
Reaction Bonded Silicon Carbide (RBSIC). Abubuwan da aka fara farawa sune silicon carbide da carbon. Sa'an nan kuma an shigar da ɓangaren kore tare da narkakkar silicon sama da 1450ºC tare da amsa: SiC + C + Si -> SiC. Microstructure gabaɗaya yana da ɗan adadin silikon da ya wuce kima, wanda ke iyakance kaddarorin zafinsa da juriya na lalata. Canjin ƙananan ƙima yana faruwa yayin aiwatarwa; duk da haka, wani Layer na silicon yana sau da yawa a saman sashin karshe. ZPC RBSiC an karɓi fasahar ci gaba, suna samar da rufin juriya, faranti, fale-falen fale-falen, rufin guguwa, tubalan, sassan da ba na ka'ida ba, da lalacewa & juriya FGD nozzles, mai musayar zafi, bututu, bututu, da sauransu.
Nitride Bonded Silicon Carbide (NBSIC, NSIC). Abubuwan da aka fara farawa sune silicon carbide da silicon foda. An harba koren kore a cikin yanayin nitrogen inda amsawar SiC + 3Si + 2N2 -> SiC + Si3N4 ke faruwa. Abu na ƙarshe yana nuna ɗan ƙaramin canji yayin sarrafawa. Kayan yana nuna wasu matakin porosity (yawanci kusan kashi 20%).
Direct Sintered Silicon Carbide (SSIC). Silicon carbide shine farkon albarkatun kasa. Kayayyakin haɓakawa sune boron tare da carbon, kuma ƙima yana faruwa ta hanyar ingantaccen tsarin ɗaukar yanayi sama da 2200ºC. Abubuwan da ke cikin yanayin zafi da juriya na lalata sun fi kyau saboda rashin gilashin lokaci na biyu a iyakokin hatsi.
Matsayin Liquid Sintered Silicon Carbide (LSSIC). Silicon carbide shine farkon albarkatun kasa. Na'urorin haɓakawa sune yttrium oxide da aluminum oxide. Densification yana faruwa sama da 2100ºC ta hanyar amsawar ruwa-lokaci kuma yana haifar da gilashin lokaci na biyu. Kaddarorin injina gabaɗaya sun fi SSIC, amma kaddarorin zafin jiki da juriyar lalata ba su da kyau.
Hot Pressed Silicon Carbide (HPSIC). Silicon carbide foda ana amfani dashi azaman farkon albarkatun ƙasa. Kayayyakin haɓakawa gabaɗaya sune boron da carbon ko yttrium oxide da aluminum oxide. Densification yana faruwa ta hanyar aikace-aikacen lokaci guda na matsa lamba na inji da zafin jiki a cikin kogon mutuwa na graphite. Siffofin su ne faranti masu sauƙi. Ana iya amfani da ƙananan adadin kayan taimako. Ana amfani da kaddarorin injina na kayan matsi mai zafi azaman tushen tushen abin da aka kwatanta sauran matakai. Ana iya canza kaddarorin wutar lantarki ta canje-canje a cikin kayan aikin densification.
CVD Silicon Carbide (CVDSIC). An samar da wannan abu ta hanyar tsarin sinadari mai tururi (CVD) wanda ya ƙunshi amsa: CH3SiCl3 -> SiC + 3HCl. Ana aiwatar da martanin a ƙarƙashin yanayin H2 tare da ajiye SiC akan madannin graphite. Tsarin yana haifar da wani abu mai tsabta sosai; duk da haka, kawai faranti masu sauƙi za a iya yin. Tsarin yana da tsada sosai saboda lokacin jinkirin amsawa.
Chemical Vapor Composite Silicon Carbide (CVCSiC). Wannan tsari yana farawa da madaidaicin graphite na mallakar mallaka wanda aka ƙera shi zuwa sifofi na kusa da cibiyar sadarwa a cikin yanayin graphite. Tsarin juyi yana ba da juzu'i ga ɓangaren graphite zuwa yanayin tururi mai ƙarfi-jihar don samar da polycrystalline, daidaitaccen SiC. Wannan tsari mai ƙarfi yana ba da damar ƙirƙira ƙira masu rikitarwa a cikin juzu'in SiC ɗin gaba ɗaya wanda ke da fasalulluka na juriya da tsafta. Tsarin juyawa yana rage lokacin samarwa na yau da kullun kuma yana rage farashi akan sauran hanyoyin.* Tushen (sai dai inda aka lura): Ceradyne Inc., Costa Mesa, Calif.
Lokacin aikawa: Juni-16-2018